Membrane dielectric isolation IC fabrication
First Claim
1. A method of making an integrated circuit comprising the steps of:
- forming a substrate having a thickness of less than about 50 μ
m;
forming semiconductor devices on a principal surface of the substrate;
depositing a low stress insulating membrane over the semiconductor devices wherein said insulating membrane has a net surface tensile stress level 2-100 times less than a fracture strength of the insulating membrane material; and
forming electrical interconnections in the membrane extending between the semiconductor devices.
2 Assignments
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Accused Products
Abstract
General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially formed from a substrate of standard thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and electrical interconnect for conventional integrated circuit die bonded thereto, with the interconnect formed in multiple layers in the membrane. Multiple die can be connected to one such membrane, which is then packaged as a multi-chip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET transistor fabrication, low impedance conductor interconnecting fabrication, flat panel displays, maskless (direct write) lithography,. and 3D IC fabrication.
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Citations
16 Claims
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1. A method of making an integrated circuit comprising the steps of:
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forming a substrate having a thickness of less than about 50 μ
m;forming semiconductor devices on a principal surface of the substrate; depositing a low stress insulating membrane over the semiconductor devices wherein said insulating membrane has a net surface tensile stress level 2-100 times less than a fracture strength of the insulating membrane material; and forming electrical interconnections in the membrane extending between the semiconductor devices. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of making an integrated circuit comprising the steps of:
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forming a substrate having a thickness of less than about 50 μ
m;forming semiconductor devices on a principal surface of the substrate; depositing a low stress insulating membrane over the semiconductor devices wherein said insulating membrane is deposited with a material selected from the group consisting of silicon dioxide and silicon nitride and has a surface stress level of less than 8×
108 dynes/cm2 in tension; andforming electrical interconnections in the membrane extending between the semiconductor devices.
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Specification