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Overheating detection circuit for detecting overheating of a power device

  • US 5,355,123 A
  • Filed: 11/21/1991
  • Issued: 10/11/1994
  • Est. Priority Date: 07/17/1990
  • Status: Expired due to Fees
First Claim
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1. An overheating detect ion arrangement for detecting overheating of a power integrated circuit, including:

  • a power device integrated in a semiconductor substrate; and

    an overheating detection circuit, including;

    a reverse biased pn junction formed in the same semiconductor substrate as said power device and having a reverse leakage current flow which is temperature dependent;

    voltage means formed in said semiconductor substrate as said power device and coupled to said pn junction for producing a voltage depending on the reverse leakage current flow; and

    threshold means connected for receiving the voltage and producing a signal when the voltage exceeds a threshold voltage to indicate that said power device is overheated.

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