Plasma cleaning method for removing residues in a plasma treatment chamber

• US 5,356,478 A
• Filed: 01/03/1994
• Issued: 10/18/1994
• Est. Priority Date: 06/22/1992
• Status: Expired due to Term

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Liu, David, Arnett, David, Chen, Ching-Hwa
• Primary Examiner(s): Dean, Richard O.
• Assistant Examiner(s): CHAUDHRY, SAEED T
• Application Number:
  US08/176,935
• Time in Patent Office: 288 Days
• Field of Search: 134/1, 134/22.1, 156/643, 156/345
• US Class Current: 134/1
• CPC Class Codes: B08B 7/0035 by radiant energy, e.g. UV, laser, light beam or the like
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: H01J 37/32862 In situ cleaning of vessels and/or internal parts
• CPC Class Codes: H01L 21/67028 for cleaning followed by drying, rinsing, stripping, blasting or the like

Abstract

A plasma cleaning method for removing residues previously formed in a plasma treatment chamber by dry etching layers such as photoresist, barriers, etc., on a wafer. The method includes introducing a cleaning gas mixture of an oxidizing gas and a chlorine containing gas into the chamber followed by performing a plasma cleaning step. The plasma cleaning step is performed by activating the cleaning gas mixture and forming a plasma cleaning gas, contacting interior surfaces of the chamber with the plasma cleaning gas and removing residues on the interior surfaces. The cleaning gas mixture can also include a fluorine-based gas. For instance, the cleaning gas can include Cl₂ and O₂ and optionally CF₄. An advantage of the cleaning method is that it is not necessary to open the plasma treatment chamber. Also, it is possible to completely remove all residues and prevent by-products formed during the cleaning step from remaining after the cleaning step.

Claims

1. A plasma cleaning method for removing aluminum-containing residues in a plasma treatment chamber, comprising:

introducing a cleaning gas mixture comprising oxygen gas and a chlorine containing gas into a plasma treatment chamber; and

performing a plasma cleaning step by activating the cleaning gas mixture and forming a plasma with the cleaning gas, contacting interior surfaces of the plasma treatment chamber with the plasma cleaning gas and removing aluminum-containing residues on the interior surfaces.

2. The method of claim 1, wherein the cleaning gas mixture further comprises a fluorine-based gas.

3. The method of claim 1, wherein the chlorine-based gas comprises 10-25 % by volume of the cleaning gas.

4. The method of claim 2, wherein the fluorine-based gas comprises 2-10% by volume of the cleaning gas.

5. The method of claim 1, wherein the chlorine-based gas comprises Cl₂, CCl₄ HCl or mixtures thereof.

6. The method of claim 2, wherein the fluorine-based gas comprises NF₃, SF₆, a fluorocarbon or mixture thereof.

7. The method of claim 6, wherein the fluorocarbon comprises CF₄, C₂ F₆ or mixture thereof.

8. The method of claim 1, wherein the cleaning gas further contains H₂ O, H₂ O₂ O₃ or mixture thereof.

9. The method of claim 2, wherein the chlorine-based gas and the fluorine-based gas comprise a chlorofluorocarbon gas.

10. The method of claim 1, wherein the plasma cleaning gas removes carbon of organic residues, metals, and metal oxides in the form of gas by-products.

11. The method of claim 1, wherein at least one of aluminum and copper in the residues is converted into a gaseous form via reaction with the chlorine in the plasma cleaning gas.

12. The method of claim 2, wherein at least one of oxides and tungsten in the residues is converted into a gaseous form via reaction with the fluorine of the plasma cleaning gas.

13. The method of claim 1, wherein the plasma treatment chamber is evacuated during the cleaning step.

14. The method of claim 13, wherein during the cleaning step an interior of the plasma treatment chamber is initially at a high pressure and then at a low pressure, the high pressure being greater than 25 mTorr and the low pressure being less than 25 mTorr.

15. The method of claim 14, wherein the high pressure is around 40 mTorr and the low pressure is around 10 mTorr.

16. The method of claim 1, wherein at least one by-product selected from the group consisting of AlCl₃ CO, CO₂ Cl₂ CuCl, and WF₅ is removed from the plasma treatment chamber when the interior surfaces of the chamber are contacted with the plasma cleaning gas.

17. The method of claim 1, wherein the residues are removed without opening the plasma treatment chamber.

18. The method of claim 1, further comprising a step of dry etching one or more layers on at least one wafer prior to the plasma cleaning step, the layers including at least one of a photoresist, metal film and oxide film, the dry etching causing residues to be deposited on interior surfaces of the plasma treatment chamber.

19. The method of claim 18, wherein the dry etch comprises a chlorine-based dry etch and residues of the chlorine-based dry etch are removed by the plasma cleaning gas without leaving by-products that will interfere with a dry etch performed after the plasma cleaning step and without generating particles which would reduce a yield of a subsequent dry etch.

20. The method of claim 1, wherein the residues are completely removed from the interior surfaces of the plasma treatment chamber and no by-products remain in the plasma treatment chamber after the plasma cleaning step is terminated.

21. A plasma cleaning method for removing metal-containing residues in a plasma treatment chamber, comprising:

introducing a cleaning gas mixture comprising oxygen gas and a chlorine containing gas into a plasma treatment chamber; and

performing a plasma cleaning step by activating the cleaning gas mixture and forming a plasma with the cleaning gas, contacting interior surfaces of the plasma treatment chamber with the plasma cleaning gas and removing metal-containing residues on the interior surfaces.

22. The method of claim 21, wherein the metal-residues include aluminum, titanium, copper, tungsten or mixture thereof.