Epitaxial silicon membranes

• US 5,357,899 A
• Filed: 09/13/1993
• Issued: 10/25/1994
• Est. Priority Date: 10/08/1991
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Uram, Kevin J., Meyerson, Bernard S., Bassous, Ernest
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): Garrett, Felisa
• Application Number:
  US08/120,290
• Time in Patent Office: 407 Days
• Field of Search: 156/603, 156/DIG. 64, 156/DIG. 67, 156/DIG. 86, 156/DIG. 113, 428/446, 428/472, 430/5
• US Class Current: 117/4
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: G03F 1/22 Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
• CPC Class Codes: H01L 21/30608 Anisotropic liquid etching H01L21/3063 takes precedence

Abstract

The subject invention provides a silicon membrane material made from silicon that is epitaxially deposited at low temperatures greater than or equal to 500° C. and doped with controlled amounts of boron and germanium. A silicon membrane structure is provided and made by one or more layers of ultra thin epitaxially deposited silicon layers that are precisely controlled in both thickness and composition. At least one of the layers is doped with boron in a concentration range greater than 2×10²⁰ atoms of boron per cubic centimeter of silicon, or with germanium in a concentration range greater than 5×10²⁰ atoms of germanium per cubic centimeter of silicon, or with a combination of boron and germanium in these concentration ranges. A silicon membrane fabrication process is also provided which requires no additional masking film to protect the membrane surface during KOH etching of the bulk silicon substrate.

Claims

1. A method of producing an epitaxial silicon membrane, said method comprising the steps of:

growing one or more films of silicon epitaxially using chemical vapor deposition at a temperature in a range of about 500°

to about 850°

C. on a substrate surface; and

doping at least one of said silicon films during said growing with a dopant selected from the group consisting of;

boron in a concentration range greater than 2×

10²⁰ atoms of boron/cm³ of silicon;

germanium in a concentration range greater than 5×

10²⁰ atoms of germanium/cm³ of silicon; and

boron and germanium, said boron in a concentration range greater than 2×

10²⁰ atoms of boron/cm³ of silicon and said germanium in a concentration range greater than 5×

10²⁰ atoms of germanium/cm³ of silicon.

2. The method of claim 1 wherein said substrate has two surfaces and said growing step comprises growing said films of silicon on both of said surfaces simultaneously.

3. The method of claim 1 wherein said substrate comprises silicon.

4. A method of selectively etching an epitaxial silicon membrane, said method comprising the steps of:

doping portions of said silicon membrane with a dopant selected from the group consisting of;

boron in a concentration range greater than 2×

10²⁰ atoms of boron/cm³ of silicon;

germanium in a concentration range greater than 5×

10²⁰ atoms of germanium/cm³ of silicon; and

boron and germanium, said boron in a concentration range greater than 2×

10²⁰ atoms of boron/cm³ of silicon and said germanium in a concentration range greater than 5×

10²⁰ atoms of germanium/cm³ of silicon, other portions of said silicon membrane not being so doped; and

etching the resulting silicon membrane with a strongly alkaline anisotropic chemical etching solution so as to selectively remove said other portions of said silicon membrane.

5. The method of claim 4 wherein said strongly alkaline anisotropic chemical etching solution comprises potassium hydroxide.