Semiconductor photodiode device with isolation region

• US 5,360,987 A
• Filed: 11/17/1993
• Issued: 11/01/1994
• Est. Priority Date: 11/17/1993
• Status: Expired due to Term

• Current Assignee: American Telephone & Telegraph Company (AT&T, Inc.)
• Original Assignee: AT&T, Inc.
• Inventors: Shibib, Muhammed A.
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US08/155,610
• Time in Patent Office: 349 Days
• Field of Search: 257/462, 257/461, 257/465, 257/458, 257/446, 257/545, 257/548, 257/513, 257/514, 257/515, 257/519
• US Class Current: 257/446
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 27/1443 with at least one potential jump or surface barrier
• CPC Class Codes: H01L 31/03529 Shape of the potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/103 the potential barrier being of the PN homojunction type
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

A dielectrically isolated photodiode having an increased p-n junction size with improved photo-carrier collection efficiency. The photodiode comprises a first layer of semiconductor material formed on the bottom and the walls of an isolation region; a second layer of semiconductor material formed on the first layer. The second layer forming a first p-n junction with the first layer and having opposite conductivity type compared to that of the first layer. The photodiode also comprises a third layer of semiconductor material formed on the second layer and electrically coupled to the first layer. The third layer having the same conductivity type as the first layer and forming a second p-n junction with the second layer. During operation, the first p-n junction functions to collect photo-generated carriers that extend to the bottom and walls of the isolation region, thereby increasing the active collecting p-n junction area per isolation region area to improve efficiency of the photodiode.

Claims

1. A photodiode in an isolation region of a substrate, the isolation region having a bottom and walls, the photodiode comprising:

a first layer of semiconductor material formed on the bottom and the walls of the isolation region, said first layer having a first conductivity type;

a second layer of semiconductor material formed on said first layer, said second layer having a second conductivity type opposite to said first conductivity type and forming a first p-n junction with said first layer; and

a third layer of semiconductor material formed on said second layer and electrically coupled to said first layer, said third layer of semiconductor having said first conductivity type and forming a second p-n junction with said second layer;

wherein during operation, said first p-n junction functions to collect photo-generated carriers that extend to the bottom and walls of the isolation region, thereby increasing collecting p-n junction area per isolation region area to improve efficiency of the photodiode.

2. The photodiode according to claim 1, wherein said first conductivity type is P and said second conductivity type is N.

3. The photodiode according to claim 1, wherein said first conductivity type is N and said second conductivity type is P.

4. The photodiode according to claim 1, wherein the substrate is polysilicon and the isolation region comprises dielectric isolation having non-vertical walls.

5. The photodiode according to claim 1, wherein the substrate is insulating and the isolation region is formed between vertical isolation trenches.

6. The photodiode according to claim 1, wherein the substrate is a crystalline semiconductor.

7. A photodiode in an isolation region of a substrate, the isolation region having a bottom and walls, the photodiode comprising:

a first layer of semiconductor material formed on the bottom of the isolation region, said first layer having a first conductivity type and a first dopant concentration level;

a second layer of semiconductor material formed on said first layer, said second layer having a second conductivity type opposite to said first conductivity type and forming a first p-n junction with said first layer; and

a third layer of semiconductor material formed on said second layer, said third layer of semiconductor having said first conductivity type, a second dopant concentration level higher than said first dopant concentration level and forming a second p-n junction with said second layer;

wherein during operation, said first layer provides a built-in electric field that directs electron-hole pairs away from the bottom of the isolation region, thereby increasing electron-hole pair collection efficiency of said second p-n junction.

8. The photodiode according to claim 7, wherein said first conductivity type is P and said second conductivity type is N.

9. The photodiode according to claim 7, wherein said first conductivity type is N and said second conductivity type is P.

10. The photodiode according to claim 7, wherein the substrate is polysilicon and the isolation region comprises dielectric isolation having non-vertical walls.

11. The photodiode according to claim 7, wherein the substrate is insulating and the isolation region is formed between vertical isolation trenches.

12. The photodiode according to claim 7, wherein the substrate is a crystalline semiconductor.