Process for modifying fluorine resin surfaces

• US 5,362,525 A
• Filed: 12/07/1993
• Issued: 11/08/1994
• Est. Priority Date: 12/08/1992
• Status: Expired due to Fees

• Current Assignee: Japan Atomic Energy Research Institute (Japan Atomic Energy Agency)
• Original Assignee: Japan Atomic Energy Research Institute (Japan Atomic Energy Agency), Kurashiki Boseki Kabushiki Kaisha, Radiation Application Development Association
• Inventors: Eguchi, Yosuke, Shimizu, Yuichi, Tanaka, Tadaharu, Kawanishi, Shunichi, Nishii, Masanobu, Sugimoto, Shunichi
• Primary Examiner(s): PIANALTO, BERNARD D
• Application Number:
  US08/162,702
• Time in Patent Office: 336 Days
• Field of Search: 427/554, 427/558, 427/444, 427/596, 427/581
• US Class Current: 427/554
• CPC Class Codes: B01D 67/0093 Chemical modification
• CPC Class Codes: B01D 71/32 containing fluorine atoms
• CPC Class Codes: B01D 71/36 Polytetrafluoroethene
• CPC Class Codes: C08J 2327/12 containing fluorine atoms
• CPC Class Codes: C08J 7/043 Improving the adhesiveness of the coatings per se, e.g. forming primers adhesives in the form of films or foils characterised by the primer layers between the polymer carriers and the adhesives C09J7/50
• CPC Class Codes: C08J 7/06 with compositions not containing macromolecular substances

Abstract

A process for modifying surfaces of fluorine resins including irradiating an ultraviolet laser beam on the surfaces in the presence of an inorganic silicon compound. The inorganic silicon compound could be a silicate, silicon oxide, silicon nitride, or silicon carbide.

Claims

1. A process for modifying surfaces of fluorine resins comprising irradiating an ultraviolet laser beam on said surfaces in the presence of an inorganic silicon compound selected from the group consisting of silicates, silicon oxide silicon nitride and silicon carbide.

2. The process according to claim 1, wherein an aqueous solution of the inorganic silicon compound is in contact with the surfaces of the fluorine resins.

3. The process according to claim 2, wherein the inorganic silicon compound is a silicate.

4. The process according to claim 2, wherein the ultraviolet laser beam is selected from the group consisting of a KrF-excimer laser beam and an ArF-excimer laser beam.

5. The process according to claim 1, wherein the ultraviolet laser beam is selected from the group consisting of a KrF-excimer laser beam and an ArF-excimer laser beam.