Single mirror light-emitting diodes with enhanced intensity
First Claim
1. A light-emitting diode (LED) which comprises a semiconductor structure including an active region, and a top electrode and a bottom electrode to the structure, whereinsaid top electrode is a reflector and said bottom electrode has a window for passage of light emission of the device, said top electrode sets up a standing optical wave for light emitted through said window,said active region comprises a plurality of quantum wells positioned relative to the top electrode so that the center of the active region occurs at a distance from the top electrode which is greater than λ
- /2, wherein λ
is the emission wavelength of the semiconductor, said active region fits into an anti-node of an optical mode of the LED, and the center of said active region occurs at a position of at leat a second anti-note of the standing optical wave.
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Abstract
This invention embodies single mirror light-emitting diodes (LEDs) with enhanced intensity. The LEDs are Group III-V and/or II-IV compound semiconductor structures with a single metallic mirror. The enhanced intensity is obtained by placing an active region of the LED having from two to ten, preferably from four to eight, quantum wells at an anti-node of the optical node of the device created by a nearby metallic mirror. Such multiquantum well LED structures exhibit enhanced efficiencies approaching that of a perfect isotropic emitter.
72 Citations
16 Claims
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1. A light-emitting diode (LED) which comprises a semiconductor structure including an active region, and a top electrode and a bottom electrode to the structure, wherein
said top electrode is a reflector and said bottom electrode has a window for passage of light emission of the device, said top electrode sets up a standing optical wave for light emitted through said window, said active region comprises a plurality of quantum wells positioned relative to the top electrode so that the center of the active region occurs at a distance from the top electrode which is greater than λ - /2, wherein λ
is the emission wavelength of the semiconductor, said active region fits into an anti-node of an optical mode of the LED, and the center of said active region occurs at a position of at leat a second anti-note of the standing optical wave. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
- /2, wherein λ
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10. A light emitting diode (LED) which comprises a semiconductor structure comprising Group III-V semiconductors and a top and a bottom electrode to the structure.
said structure comprising, in an ascending order from the bottom electrode, a substrate, a bottom confining region, an active region, a top confining region, and a contact layer, a dielectric barrier layer on top of the contact layer has a window exposing a small area of the contact layer, said top electrode being in contact with said dielectric barrier layer and, through said window, with the contact layer. said top electrode is a reflector and said bottom electrode has a window for passage of light emission of the device, said top electrode sets up a standing optical wave for light emitted through said window, wherein said active region comprises a plurality of quantum wells positioned relative to the top electrode so that the center of the active region occurs at a distance from the top electrode which is greater than λ - /2, wherein λ
is the emission wavelength of the semiconductor, said active region fits into an anti-node of an optical mode of the LED, and the center of the active region occurs at a position of at least a second anti-node of the standing optical wave. - View Dependent Claims (11, 12, 13, 14, 15, 16)
- /2, wherein λ
Specification