Highly durable noncontaminating surround materials for plasma etching

• US 5,364,496 A
• Filed: 08/20/1993
• Issued: 11/15/1994
• Est. Priority Date: 08/20/1993
• Status: Expired due to Fees

• Current Assignee: Integrated Process Equipment Corp. (Speedfam Co., Ltd)
• Original Assignee: Hughes Aircraft Company (Rtx Corporation)
• Inventors: Bollinger, Lynn D., Power, Michael P., Poole, Richard R., Gardopee, George J.
• Primary Examiner(s): POWELL, WILLIAM A
• Application Number:
  US08/110,021
• Time in Patent Office: 452 Days
• Field of Search: 156/643, 156/646, 156/657, 156/662, 156/345, 204/298.31, 204/298.33, 204/298.38
• US Class Current: 216/67
• CPC Class Codes: H01L 21/68 for positioning, orientation or alignment

Abstract

A support and positioning apparatus (10) for supporting and positioning a wafer (12), substrate or the like in a plasma assisted chemical etching process. Surround components (14, 16, 18, 20) positioned around the substrate (12) are comprised of substantially pure magnesium or are aluminum coated with a magnesium fluoride coating such that as a plasma tool associated with the plasma etching process traverses the edge of the substrate (12), the plasma etching environment generated from a fluorine containing feed gas emitted from the plasma tool does not significantly erode the surround components (14, 16, 18, 20) or cause contamination of the substrate (12).

Claims

1. A positioning and supporting apparatus for positioning and supporting an article in a plasma etching process employing a plasma tool, wherein the plasma etching process effects removal of surface material from the article, said positioning and supporting apparatus comprising:

a support area for accepting the article;

a surround adjacent the support area, said surround defining at least one surround component having an outer surface comprised of a magnesium material such that as the plasma tool employed in the plasma etching process traverses an edge portion of the article, chemically reactive and excited species generated by a feed gas from the plasma tool impinge upon the surround component.

2. The positioning and support apparatus according to claim 1 wherein the at least one surround component is comprised of substantially pure magnesium.

3. The positioning and support apparatus according to claim 1 wherein the at least one surround component is an aluminum component coated with magnesium fluoride.

4. The support and positioning apparatus according to claim 3 wherein the magnesium fluoride coating is approximately 0.1 microns thick.

5. The support and positioning apparatus according to claim 1 wherein the at least one surround component includes a base plate and a series of substrate stops.

6. The support and positioning apparatus according to claim 1 wherein the at least one surround component is an annulus positioned around the article.

7. The support and positioning apparatus according to claim 1 wherein the article is a silicon wafer.

8. A positioning and supporting apparatus for positioning and supporting a wafer in a plasma etching process employing a plasma tool, wherein the plasma etching process effects removal of surface material from the wafer, said positioning and supporting apparatus comprising:

a base plate for accepting the wafer, said base plate including an outer surface comprised of a magnesium material; and

a plurality of wafer positioning mechanisms adaptable to secure the wafer to the base plate, said plurality of wafer supporting mechanisms including an outer surface comprised of a magnesium material such that as the plasma tool employed in the plasma etching process traverses an edge portion of the wafer, chemically reactive and excited species generated by a feed gas from the plasma tool impinge upon the magnesium surface of the base plate and the positioning mechanisms.

9. The positioning and supporting apparatus according to claim 8 wherein the base plate and the plurality of positioning mechanisms are comprised of substantially pure magnesium.

10. The positioning and support apparatus according to claim 8 wherein the base plate and the plurality of positioning mechanisms are aluminum coated with magnesium fluoride.

11. The support and positioning apparatus according to claim 10 wherein the magnesium fluoride coating is approximately 0.1 microns thick.

12. The support and positioning apparatus according to claim 8 wherein the plurality of wafer positioning mechanisms are three wafer button stops and a wafer button pushing mechanism.

13. A method of positioning and supporting an article in a plasma etching process employing a plasma tool, wherein the plasma etching process effects removal of surface material from the article, said method comprising the steps of:

providing a support for accepting the article; and

providing a surround adjacent the support, said surround defining at least one surround component having an outer surface comprised of a magnesium material such that as the plasma tool employed in the plasma etching process traverses an edge portion of the article, chemically reactive and excited species generated by a feed gas from the plasma tool impinge upon the surround component.

14. The method according to claim 13 wherein the step of providing a surround includes providing a surround in which the at least one surround component is comprised of substantially pure magnesium.

15. The method according to claim 13 wherein the step of providing a surround includes providing a surround in which the at least one surround component is an aluminum component coated with magnesium fluoride.

16. The method according to claim 15 wherein the step of providing the surround includes providing a surround component having a magnesium fluoride coating of approximately 0.1 microns thick.

17. The method according to claim 13 wherein the step of providing a surround includes providing a base plate and a series of substrate stops.

18. The method according to claim 13 wherein the step of providing a surround includes providing a surround annulus positioned around the article.