Micro-miniature structures and method of fabrication thereof

• US 5,364,742 A
• Filed: 09/21/1992
• Issued: 11/15/1994
• Est. Priority Date: 09/21/1992
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Fan, Long-Shen, Zappe, Hans H.
• Primary Examiner(s): McCamish, Marion E.
• Assistant Examiner(s): CODD, BERNARD P
• Application Number:
  US07/948,189
• Time in Patent Office: 785 Days
• Field of Search: 430/16, 430/273, 430/276, 430/313, 430/311, 430/312, 430/317, 156/656, 156/657
• US Class Current: 430/317
• CPC Class Codes: B81B 2201/035 Microgears
• CPC Class Codes: B81B 2201/037 Microtransmissions
• CPC Class Codes: B81C 99/0085 using moulds and master templates, e.g. for hot-embossing
• CPC Class Codes: G03F 7/00 Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using photoresist structures for special production processes, see the relevant places, e.g. B44C, H01L, e.g. H01L21/00, H05K
• CPC Class Codes: G03F 7/11 having cover layers or intermediate layers, e.g. subbing layers G03F7/091 - G03F7/093, B41N3/03 take precedence
• CPC Class Codes: H02N 1/008 Laterally driven motors, e.g. of the comb-drive type

Abstract

In the fabrication of a free-standing miniaturized structure in a range of about 10 to 20 μm thick, a method based on a sacrificial system includes the steps of selecting a substrate material, depositing on the substrate material a sacrificial layer of material and patterning the sacrificial layer to define a shape. A photoresist layer of material is deposited on the sacrificial layer and patterned by contrast-enhanced photolithography to form a photoresist mold. Upon the mold there is plated a metallic layer of material. The electroplated structure conforms to the resist profile and can have a thickness many times that of conventional polysilicon microstructures. The photoresist mold and the sacrificial layer are thereafter dissolved using etchants to form a free standing metallic structure in a range of about 10 to 20 μm thick, with vertical to lateral aspect ratios of 9:1 to 10:1 or more.

Claims

1. A method for fabricating a method, comprising the steps of:

selecting a substrate material;

depositing on the substrate material a sacrificial layer of material;

patterning the sacrificial layer to define a shape;

depositing on the sacrificial layer a photoresist layer of material;

patterning the photoresist layer by contrast-enhanced photolithography to form a photoresist mold;

plating a metallic layer of material on the photoresist mold, said photoresist layer being patterned to provide a free standing metallic structure having an aspect ratio of at least 9;

1; and

dissolving the photoresist mold and the sacrificial layer using etchants to form a free standing metallic structure.

2. The method of claim 1 wherein the sacrificial layer, the metallic layer and the etchants are chosen to provide high etching selectivity so as to etch the sacrificial layer at a substantially higher rate than the metallic layer.

3. The method of claim 1 wherein the sacrificial layer is formed from a glass material, the metallic layer is formed from a transition element and the etchant is made from an HF-based acid material.

4. The method of claim 1 wherein the sacrificial layer is phosphosilicate glass (PSG), the metallic layer is copper or chromium and the etchant is hydrofluoric acid (HF).

5. The method of claim 4 wherein the contrast enhancement layer is formed from a composition having a bleachable dye therein.

6. The method of claim 1 wherein the step of depositing a photoresist layer further includes the step of depositing a contrast enhancement layer on the photoresist layer.

7. The method of claim 1 wherein the step of depositing a photoresist layer further includes the step of depositing a barrier layer on the photoresist layer and a contrast enhancement layer on the barrier layer.

8. The method of claim 1 wherein the step of patterning the photoresist layer includes masking the photoresist layer and exposing unmasked portions of the photoresist layer using a low numerical aperture projection system providing a source of collimated radiation having a wavelength of about 0.365 μ

m.

9. The method of claim 1 wherein the photoresist layer is formed at a thickness of not less than about 2 μ

m.

10. The method of claim 1 wherein the photoresist layer is patterned to provide a free standing structure having a vertical thickness of up to about 20 micrometers.

11. A method for fabricating methods having a substrate material and a free standing metallic structure positioned above the substrate, said structure being formed by the steps of:

selecting a substrate material;

depositing on the substrate material a sacrificial layer of material;

patterning the sacrificial layer to define a shape;

depositing on the sacrificial layer a photoresist layer of material;

patterning the photoresist layer by contrast-enhanced photolithography to form a photoresist mold having one or more substantially vertical sidewalls, including masking the photoresist layer and exposing unmasked portions of the photoresist layer using a source of collimated radiation having a wavelength of about 365 nanometer, and thereafter photodeveloping the photoresist layer to remove the unmasked portions of the photoresist layer;

electro-plating a metallic layer of material on the photoresist mold, said photoresist layer being patterned to provide a free standing metallic structure having an aspect ratio of at least 9;

1; and

dissolving the photoresist mold and the sacrificial layer using etchants to form a free standing metallic structure.

12. The method of claim 11 wherein the sacrificial layer, the metallic layer and the etchant are chosen to provide high etching selectivity so as to etch the sacrificial layer at a substantially higher rate than the metallic layer.

13. The method of claim 11 wherein the sacrificial layer is formed from a glass material, the metallic layer is formed from a transition element and the etchant is made from an acid material.

14. The method of claim 11 wherein the sacrificial layer is phosphosilicate glass (PSG), the metallic layer is copper or chromium and the etchant is hydrofluoric acid (HF).

15. The method of claim 14 wherein the contrast enhancement layer is formed from a composition having a bleachable dye therein.

16. The method of claim 11 wherein the step of depositing a photoresist layer further includes the step of depositing a contrast enhancement layer on the photoresist layer.

17. The method of claim 11 wherein the step of depositing a photoresist layer further includes the step of depositing a barrier layer on the photoresist layer and a contrast enhancement layer on the barrier layer.

18. The method of claim 11 wherein the photoresist layer is formed at a thickness of not less than about 2 μ

m.

19. A method for fabricating miniaturized structures having a substrate material and a free standing metallic structure positioned above the substrate, said structure being formed by the steps of:

selecting a substrate material;

depositing on the substrate material a sacrificial layer of material;

patterning the sacrificial layer to define a shape;

depositing on the sacrificial layer a photoresist layer of material;

patterning the photoresist layer by contrast-enhanced photolithography to form a photoresist mold;

plating a metallic layer of material on the photoresist mold, said photoresist layer being patterned to provide a free standing structure having an aspect ratio of at least 9;

1 and a vertical thickness between about 2-20 micrometers; and

dissolving the photoresist mold and the sacrificial layer using etchants to form a free standing metallic structure.