Semiconductor device incorporating thermally contracted film

• US 5,365,081 A
• Filed: 03/27/1992
• Issued: 11/15/1994
• Est. Priority Date: 03/27/1991
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Takemura, Yasuhiko, Yamazaki, Shunpei
• Primary Examiner(s): NGO, NGAN V
• Application Number:
  US07/858,883
• Time in Patent Office: 963 Days
• Field of Search: 257/57, 257/67, 257/347, 257/348, 257/349, 257/350, 257/351, 257/352, 257/353, 257/354, 257/634, 257/650
• US Class Current: 257/67
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/0922 Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
• CPC Class Codes: H01L 27/1281 by using structural features to control crystal growth, e.g. placement of grain filters
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: Y10S 438/967 Semiconductor on specified insulator

Abstract

A semiconductor device and a method for forming the same. The semiconductor device comprises an insulating or semiconductor substrate, a thermally-contractive insulating film which is formed on said substrate and provided with grooves, and a semiconductor film which is formed on the thermally-contractive insulating film and divided in an islandish form through the grooves. The thermally-contractive insulating film is contracted in a heat process after the semiconductor film is formed.

Claims

1. A semiconductor device comprising:

an insulating and thermally contracted film provided on a surface; and

a semiconductor film island provided on said insulating and thermally contracted film, functioning at least as a channel region of said device,

wherein said insulating and thermally contracted film is contracted by heating after the formation of said semiconductor film island thereon.

2. The device of claim 1 wherein said semiconductor film island is forced to contract by the contraction of said insulating and thermally contracted film.

3. The device of claim 1 wherein said contraction of said insulating and thermally contracted film is in the range of 0-500 ppm.

4. The device of claim 1 wherein a groove is formed within said insulating and thermally contracted film.

5. The device of claim 4 wherein said groove is formed by removing a part of said film in order that a surface of said substrate is not exposed to said groove.

20. The device of claim 1 wherein said insulating and thermally-contracted film contains 10 to 30 atom % hydrogen prior to the heat contraction thereof.

6. A semiconductor device comprising:

a heat-contracted insulating film formed on a surface, having a thickness of 50-1000 nm; and

a semiconductor film formed on said insulating film, having a thickness of 10-500 nm and functioning as at least a channel region of said device.

7. The device of claim 6 wherein said glass is selected from the group consisting of phosphosilicate glass, borosilicate glass and a quartz.

8. The device of claim 6 wherein a groove is formed within said insulating film.

21. The device of claim 6 wherein said heat-contracted film contains 10 to 30 atom % hydrogen prior to the heat contraction thereof.

23. The device of claim 6 wherein said heat contracted insulating layer comprises glass.

9. A semiconductor device comprising:

a heat-contracted insulating film formed on a surface, having a thickness of 50-1000 nm and having a groove formed therein; and

a semiconductor film formed on said insulating film having a thickness of 10-500 nm and functioning at least as an active region of said device;

wherein said groove is formed by removing a part of said insulating film in order that a surface of said substrate is not exposed to said groove.

24. The device of claim 9 wherein said heat contracted insulating layer comprises glass.

10. A semiconductor device comprising:

a substrate having thereon a plurality of insulating islands separated from one another and comprising a heat-contracted insulating film, respectively;

a semiconductor layer formed on said insulating islands, functioning as at least a channel region of said device,

wherein said heat-contracted insulating film is contracted by heating after the formation of said semiconductor layer.

11. The device of claim 10 wherein said semiconductor layer extends over some of said islands so that said semiconductor layer directly contacts with said substrate at a gap between adjacent ones of said islands.

12. The device of claim 10 wherein said semiconductor layer has a thickness of 10-500 nm and said insulating layer has a thickness of 50-1000 nm.

13. The device of claim 10 wherein a thickness "T" and a width "L" of said insulating islands satisfies L/T<

1000.

14. A semiconductor device comprising:

a substrate having thereon a plurality of insulating islands separated from one another and comprising a heat-contracted insulating film having a heat contraction in the range of 30-500 ppm, respectively; and

a semiconductor layer formed on said insulating islands and functioning as at least a channel region of said device.

15. The device of claim 14 wherein said glass is selected from the group consisting of phosphosilicate glass, borosilicate glass and a quartz.

25. The device of claim 14 wherein said heat contracted insulating layer comprises glass.

16. A semiconductor device comprising:

a substrate having thereon a plurality of insulating islands separated from one another and comprising a heat-contracted insulating film, respectively;

a plurality of semiconductor islands separated from one another and formed on said insulating islands, respectively, where each of said semiconductor islands function as at least a channel of said device,

wherein said heat-contracted insulating film is contracted by heating after the formation of said semiconductor layer.

17. The device of claim 16 wherein said heat contracted insulating film comprises a glass selected from the group consisting of phosphosilicate glass, borosilicate glass and a quartz.

22. The device of claim 16 wherein said heat-contracted film contains 10 to 30 atom % hydrogen prior to the heat contraction thereof.

18. A semiconductor device comprising:

an insulating and thermally contracted film provided on a surface; and

a semiconductor film island provided on said insulating and thermally contracted film with a groove formed therein,

wherein said insulating and thermally contracted film is contracted by heating after the formation of said semiconductor film island thereon, and

wherein said groove is formed by removing a part of said insulating and thermally contracted film in order that a surface of said substrate is not exposed to said groove.

19. A semiconductor device comprising:

a heat-contracted insulating film comprising glass and formed on a surface having a groove formed therein; and

a semiconductor film formed on said insulating film,

wherein said groove is formed by removing a part of said insulating film in order that a surface of said substrate is not exposed to said groove.