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Metal matrix composite semiconductor power switch assembly

  • US 5,365,108 A
  • Filed: 11/19/1992
  • Issued: 11/15/1994
  • Est. Priority Date: 11/19/1992
  • Status: Expired due to Fees
First Claim
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1. A semiconductor assembly comprising:

  • a metal matrix composite housing having a base and a plurality of side walls, one of said side walls having an opening disposed therethrough;

    a semiconductor die having a plurality of power electrode pads on an upper surface of said semiconductor die and a power electrode on a lower surface of said semiconductor die;

    said lower surface of said semiconductor die mechanically and electrically connected to said base;

    a partially hollow conductive post sufficiently large in cross-section to conduct current to said plurality of electrode pads on said upper surface of said semiconductor die;

    an insulating insert disposed within said opening disposed through said one of said side walls, said post extending through said insulating insert and insulated from said one of said side walls by said insulating insert;

    a conductive bus mechanically secured to said base;

    a lead coupling said post to said bus; and

    a plurality of leads coupling said bus to said power electrode pads on said upper surface of said semiconductor die.

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