AC-coupled single-ended or differential-input radio frequency amplifier integrated circuit
First Claim
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1. A single-ended input and differential-output radio frequency (RF) amplifier for fabrication within a single semiconductor integrated circuit (IC), the amplifier comprising:
- a radio frequency (RF) input terminal for accepting signals in excess of one gigahertz in frequency;
a first bipolar transistor amplifier having a first collector, a first emitter and a first base;
a first transistor current source for providing a bias to the first bipolar transistor;
a first emitter decoupling capacitor connected between said first emitter and a signal common;
a first capacitor network comprised of a first input capacitor connected between the RF input terminal and said first base and a first base capacitor connected between said first base and said signal common;
a second bipolar transistor having a second collector, a second emitter and a second base;
a second transistor current source for providing a bias to the second bipolar transistor;
a second emitter decoupling capacitor connected between said second emitter and said signal common;
a second capacitor network comprised of a second input capacitor connected between said signal common and said second base and a second base capacitor connected between said second base and said signal common; and
a second emitter coupling capacitor connected between said signal common and said second emitter.
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Abstract
An embodiment of the present invention combines, on a single integrated circuit, a first bipolar transistor in a common-emitter configuration capacitively coupled to a second bipolar transistor in a common-base configuration, together with a capacitive input coupling for a single-ended input and directly-coupled collector outputs for a differential-output for driving successive differential-input and differential-output emitter-coupled transistor pairs for multiple stages of amplifier gain.
43 Citations
11 Claims
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1. A single-ended input and differential-output radio frequency (RF) amplifier for fabrication within a single semiconductor integrated circuit (IC), the amplifier comprising:
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a radio frequency (RF) input terminal for accepting signals in excess of one gigahertz in frequency; a first bipolar transistor amplifier having a first collector, a first emitter and a first base; a first transistor current source for providing a bias to the first bipolar transistor; a first emitter decoupling capacitor connected between said first emitter and a signal common; a first capacitor network comprised of a first input capacitor connected between the RF input terminal and said first base and a first base capacitor connected between said first base and said signal common; a second bipolar transistor having a second collector, a second emitter and a second base; a second transistor current source for providing a bias to the second bipolar transistor; a second emitter decoupling capacitor connected between said second emitter and said signal common; a second capacitor network comprised of a second input capacitor connected between said signal common and said second base and a second base capacitor connected between said second base and said signal common; and a second emitter coupling capacitor connected between said signal common and said second emitter. - View Dependent Claims (2, 3, 4, 5)
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6. A differential-input and differential-output amplifier for fabrication within a single semiconductor integrated circuit (IC), the amplifier comprising:
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a first radio frequency (RF) input terminal for accepting signals in excess of one gigahertz in frequency; a second radio frequency (RF) input terminal for accepting signals in excess of one gigahertz in frequency; a first bipolar transistor amplifier having a first collector, a first emitter and a first base; a first transistor current source for providing a bias to the first bipolar transistor; a first emitter decoupling capacitor connected between said first emitter and a signal common; a first capacitor network comprised of a first input capacitor connected between the first RF input terminal and said first base and a first base capacitor connected between said first base and said signal common; a second bipolar transistor having a second collector, a second emitter and a second base; a second transistor current source for providing a bias to the second bipolar transistor; a second emitter decoupling capacitor connected between said first emitter and the second RF input terminal; a second capacitor network comprised of a second input capacitor connected between the second RF input terminal and said second base and a second base capacitor connected between said second base and said signal common; and a second emitter coupling capacitor connected between said signal common and said second emitter. - View Dependent Claims (7, 8, 9, 10)
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11. A single-ended input and differential-output radio frequency (RF) amplifier for fabrication within a single semiconductor integrated circuit (IC), the amplifier comprising:
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a radio frequency (RF) input terminal for accepting signals in excess of one gigahertz in frequency; a first bipolar transistor amplifier having a first collector, a first emitter and a first base; a first transistor current source connected to provide a bias to the first bipolar transistor; a first emitter decoupling capacitor connected between said first emitter and a signal common; a first capacitor network comprised of a first input capacitor connected between the RF input terminal and said first base; a second bipolar transistor having a second collector, a second emitter and a second base; a second transistor current source connected to provide a bias to the second bipolar transistor; a second emitter decoupling capacitor connected between said second emitter and said signal common; a second capacitor network comprised of a second input capacitor connected between said signal common and said second base and a second base capacitor connected between said second base and said signal common; and a second emitter coupling capacitor connected between said signal common and said second emitter.
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Specification