Integrated circuit of semiconductor lasers
First Claim
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1. An integrated circuit of semiconductor lasers, comprising:
- at least one linear array of lasers formed by a plurality of layers epitaxially grown on a semi-insulator substrate, said lasers being supplied with current between a first metal contact deposited on said linear array and a second metal contact on a first of said plurality of epitaxially grown conductive layers;
wherein, in order to lower the resistance of the first epitaxially grown conductive layer, a surface layer of the substrate in contact with said first epitaxially grown conductive layer has a dopant diffused therein to make said surface layer conductive.
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Abstract
The disclosure relates to integrated circuits of lasers, wherein the linear arrays are supplied in series, with a return of current through the substrate. When the substrate is semi-insulating, only the first epitaxially grown layer is conductive. To reduce its electrical resistance, a surface film of the substrate is made conductive by diffusion of a dopant. Application to power semiconductor lasers.
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Citations
7 Claims
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1. An integrated circuit of semiconductor lasers, comprising:
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at least one linear array of lasers formed by a plurality of layers epitaxially grown on a semi-insulator substrate, said lasers being supplied with current between a first metal contact deposited on said linear array and a second metal contact on a first of said plurality of epitaxially grown conductive layers; wherein, in order to lower the resistance of the first epitaxially grown conductive layer, a surface layer of the substrate in contact with said first epitaxially grown conductive layer has a dopant diffused therein to make said surface layer conductive. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification