×

Semiconductor laser

  • US 5,365,536 A
  • Filed: 07/20/1993
  • Issued: 11/15/1994
  • Est. Priority Date: 07/20/1992
  • Status: Expired due to Fees
First Claim
Patent Images

1. A semiconductor laser for radiating a laser beam when current flows in a forward direction, said semiconductor laser comprising:

  • a semiconductor substrate;

    a first laser structure formed on said semiconductor substrate and having a forward direction coincident with said forward direction of said semiconductor laser;

    a tunnel diode structure formed on said first laser structure and having a forward direction that is opposite to said forward direction of said semiconductor laser, said tunnel diode structure including;

    a first p-type junction layer, anda second n-type junction layer formed on saidfirst p-type junction layer, anda second laser structure formed on said tunnel diode structure and having a forward direction coincident with said forward direction of said semiconductor laser;

    wherein said first and second junction layers are formed of a material selected from a group including GaAs, InGaAs and InP; and

    wherein said first and second junction layers have an impurity concentration of at least 1×

    1018 /cm3 and a layer thickness of no more than 50 nm.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×