Method and apparatus for protection of conductive surfaces in a plasma processing reactor

• US 5,366,585 A
• Filed: 01/28/1993
• Issued: 11/22/1994
• Est. Priority Date: 01/28/1993
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: White, John M., Law, Kam S., Robertson, Robert
• Primary Examiner(s): POWELL, WILLIAM A
• Application Number:
  US08/010,975
• Time in Patent Office: 663 Days
• Field of Search: 156/345, 156/643, 156/646, 134/1, 134/34, 204/192.32, 204/192.37, 204/298.31, 204/298.35, 204/298.01, 204/298.02, 204/298.11, 118/723 R, 118/723 E
• US Class Current: 216/67
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23C 16/5096 Flat-bed apparatus
• CPC Class Codes: H01J 2237/0206 Extinguishing, preventing or controlling unwanted discharges
• CPC Class Codes: H01J 2237/022 Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
• CPC Class Codes: H01J 37/026 Means for avoiding or neutralising unwanted electrical charges on tube components
• CPC Class Codes: H01J 37/32495 Means for protecting the vessel against plasma
• CPC Class Codes: Y10S 156/914 Differential etching apparatus including particular materials of construction
• CPC Class Codes: Y10S 156/916 Differential etching apparatus including chamber cleaning means or shield for preventing deposits

Abstract

An apparatus and method for protecting conductive, typically metallic, walls (212) of a plasma process chamber (200) from accumulation of contaminants thereon and from reaction with a gas plasma and either deposition-gas plasma by-products. A ceramic barrier material (220-223), preferably of at least 0.005 inches 127 micrometers) thickness, is used adjacent the conductive portions of the reactor chamber and between the gas plasma and such conductive portions to be protected. The ceramic barrier material reduces the deposit of compounds formed from the plasma on protected reactor chamber surfaces and thereby avoiding the formation of a source of particulates. Further, the ceramic barrier material enables cleaning of the reactor chamber using an etch plasma generated from halogen-comprising gas without the etch plasma attacking protected metallic portions of the reactor. The ceramic liner can serve an additional function of preventing arcing or local intense plasma discharge from a plasma-generation electrode (216), to a conductive portion of the reactor chamber.

Claims

1. In a process chamber in which a processing plasma is generated adjacent to a substrate held on a substrate holder, the improvement comprising a free-standing, electrically insulative liner disposed adjacent to metallic walls of said process chamber facing said processing plasma.

2. The improvement as recited in claim 1, wherein said liner comprises a ceramic.

3. The improvement as recited in claim 1, wherein said liner comprises a material chosen from the group consisting of the oxides and fluorides of aluminum, magnesium, and tantalum.

4. The improvement as recited in claim 3, wherein said material comprises alumina.

5. The improvement as recited in claim 3, wherein said liner has a thickness of at least 127 micrometers.

6. The improvement as recited in claim 5, wherein said thickness is greater than 250 micrometers.

7. The improvement as recited in claim 1, wherein said substrate holder separates an first part of said process chamber where said substrate is disposed and a second part of said process chamber and wherein said liner is disposed on all lateral portions of said first part in view of said substrate and is further disposed on portions of walls of said second part.

8. In a process chamber in which a processing plasma is generated adjacent to a substrate held on a substrate holder, the improvement comprising a wholly deposited insulative liner disposed adjacent to metallic walls of said process chamber facing said processing plasma and having an effective plasma electrical barrier thickness greater than 200 Angstroms.

9. The improvement as recited in claim 8, wherein said thickness is at least 1 micrometer.

10. The improvement as recited in claim 9, wherein said thickness is greater than 20 micrometers.

11. The improvement as recited in claim 10, wherein said liner has a physical thickness of at least 127 micrometers.

24. The improvement as recited in claim 8, wherein said wholly deposited insulative liner has an effective plasma electrical barrier thickness greater than that provided by 200 Angstroms of aluminum oxide.

25. The improvement as recited in claim 8, wherein said electrical barrier thickness is at least equivalent to that provided by 1 micrometer of aluminum oxide.

12. A processing system, comprising:

a vacuum chamber having electrically conductive walls;

electrodes for generating a plasma within said chamber, in an area adjacent to a substrate being processed;

gas ports to said chamber providing a gas for said plasma; and

an electrically insulative liner covering portions of said walls facing said plasma and having an effective plasma electrical barrier thickness of substantially greater than 200 Angstroms.

13. A system as recited in claim 12, wherein said electrical barrier thickness is greater than 20 micrometers.

14. A system as recited in claim 13, wherein said liner has a physical thickness of at least 127 micrometers.

15. A system as recited in claim 14, wherein said liner comprises a free-standing body placed adjacent to said walls.

16. A system as recited in claim 12, wherein said liner comprises a composition selected from the group consisting of oxides and fluorides of aluminum, magnesium, and tantalum.

26. A processing system as recited in claim 12, wherein said electrically insulative liner has an effective plasma electrical barrier thickness greater than equivalent to that provided by 200 Angstroms of aluminum oxide.

27. A processing system as recited in claim 12, wherein said electrical barrier thickness is greater than equivalent to that provided by 20 micrometers of aluminum oxide.

17. A method of protecting conductive portions of a plasma processing chamber, comprising the steps of:

providing an insulative barrier material having an effective plasma electrical barrier thickness greater than 200 Angstroms on electrically conductive portions of said processing chamber otherwise exposed to ions of a plasma; and

generating said plasma in a region of said processing chamber containing a substrate to be processed.

18. A method as recited in claim 17, wherein said barrier material is at least one free-standing body placed adjacent to said electrically conductive portions of said processing chamber.

19. A method as recited in claim 17, wherein said barrier material has a thickness of at least 127 micrometers.

20. A method as recited in claim 17, wherein said providing step deposits said insulative barrier material on said electrically conductive portions substantially without consuming portions of them and having an effective plasma electrical barrier thickness greater than 200 Angstroms.

21. A method as recited in claim 17, wherein said barrier material is a ceramic.

22. A method as recited in claim 17, wherein said barrier material is selected from the group consisting of the oxides and fluorides of aluminum, magnesium and tantalum.

23. A method as recited in claim 17, further comprising generating a halogen-containing gas plasma in said processing chamber while said substrate is removed from said chamber so as to clean said insulative barrier material.

28. The method of claim 17, wherein said insulative barrier material has an effective plasma electrical barrier thickness greater than that equivalent to 200 Angstroms of aluminum oxide.

29. The method of claim 17, wherein said providing step deposits said insulative barrier material on said electrically conductive portions substantially without consuming said conductive portions, and wherein said insulative barrier material has an effective plasma electrical barrier thickness greater than that equivalent to 200 Angstroms of aluminum oxide.