Master slice gate array integrated circuits with basic cells adaptable for both input/output and logic functions

• US 5,367,187 A
• Filed: 12/22/1992
• Issued: 11/22/1994
• Est. Priority Date: 12/22/1992
• Status: Expired due to Term

• Current Assignee: Integrated Device Technology Incorporated (Renesas Electronics Corporation)
• Original Assignee: Quality Semiconductor, Inc. (Renesas Electronics Corporation)
• Inventors: Yuen, Alex
• Primary Examiner(s): Limanek, Robert
• Assistant Examiner(s): Hardy, David B.
• Application Number:
  US07/995,224
• Time in Patent Office: 700 Days
• Field of Search: 257/202, 257/203, 257/204, 257/206, 257/207, 257/208, 257/287, 257/338, 257/350, 257/358, 257/401, 257/390, 257/365
• US Class Current: 257/401
• CPC Class Codes: H01L 27/11807 CMOS gate arrays
• CPC Class Codes: H01L 27/11898 Input and output buffer/driver structures

Abstract

The input/output circuit cells of a master-slice gate array device have the same diffusion and gate regions as the basic transistors so that the input/output of the device may be defined at the metallization stage rather than at the time the diffusion regions are formed. Thus a single size master-slice circuit device need to be kept in inventory. The array size is selected in accordance with the customer'"'"'s specification and the inputs/outputs are defined accordingly using CAD. Thereafter, the die may be scribed into smaller. The transistors for sea-of-gate structures containing a pair of long channel transistors whose drain, gate and source regions lie on a single grid or track of the CAD design tool. By using a long channel transistor in the feedback loop of a memory cell, gating transistors may be eliminated to reduce transistors required for latches. To provide the required drive capability, a number of transistors may be connected to form the input or output buffer, without requiring large transistors with large diffusion regions. A metal silicide resistor and a number of discharge transistors normally in the off condition are connected to the node between an input/output pad and input/output buffer for electrostatic discharge.

Claims

1. A master-slice gate array integrated circuit device comprising;

a semiconductor medium; and

an array of basic transistors in the medium forming sea-of-gate structures, wherein said sea-of-gate structures each comprises a plurality of wide channel transistors whose channel length is less than channel width and at least one pair of long channel transistors whose channel length is at least four times greater than its channel width.

2. The circuit of claim 1, wherein the basic transistors of said array are defined by reference to routing grids or tracks, and wherein said pair of long channel transistors occupies one routing grid or track.

3. The circuit of claim 2, wherein said long channel transistors each has a source, a drain and a gate, and wherein the source, drain and gate of each of the long channel transistors are on said one routing grid or track.

4. The circuit of claim 1, wherein each transistor has a ratio of channel width to channel length;

and

wherein the ratio of each wide channel transistor is greater than 30 times the ratio of each long channel transistor.

5. The circuit of claim 1, further comprising:

at least one conducting layer connecting at least one of the wide channel transistors and at least one of the long channel transistors to form a memory cell, said memory cell including;

a first inverter comprising the at least one wide channel transistor; and

a second inverter comprising the at least one long channel transistor;

said first and second inverters each having an input and an output

the input of the second inverter being connected to the output of the first inverter, and the output of the second inverter being connected to the input of the first inverter.

6. The circuit of claim 5, wherein said at least one conducting layer connects the at least one wide channel transistor and the at least one long channel transistor to form a latch, said latch comprising:

said memory cell;

a gate controlled by a clock signal;

an input buffer having an output;

the output of the input buffer being connected to the input of the first inverter of said memory cell through said gate.

7. The circuit of claim 6, said latch further comprising an output buffer having an input;

wherein the input of the output buffer is connected to the input of the first inverter.

8. The circuit of claim 7, wherein said input and output buffers each comprise two transistors.

9. The circuit of claim 5, wherein the basic transistors of said array are defined by reference to grids or tracks, said second inverter occupying only one track or grid.

10. A master-slice gate array integrated circuit comprising:

a semiconductor substrate;

a multiplicity of basic cells formed on the substrate, each basic cell including at least one long channel transistor and a plurality of wide channel transistors;

wherein the channel length of each at least one long channel transistor is greater than its channel width; and

wherein the channel width of each wide channel transistor is greater than its channel length.

11. The circuit according to claim 10,

wherein each respective basic cell includes common source/drain regions that are shared by adjacent wide channel transistors.

12. The circuit of claim 10,

wherein each respective basic cell includes a respective column of n-type wide channel transistors in which adjacent n-type wide channel transistors share common source/drain regions;

wherein each respective basic cell includes a respective column of p-type wide channel transistors in which adjacent p-type wide channel transistors share common source/drain regions.

13. The circuit of claim 10,

wherein each respective basic cell includes a respective column of n-type wide channel transistors in which adjacent n-type wide channel transistors share common source/drain regions;

wherein each respective basic cell includes a respective column of p-type wide channel transistors in which adjacent p-type wide channel transistors share common source/drain regions; and

wherein for respective basic cells, n-type transistor columns and respective p-type transistor columns are disposed side by side.

14. The circuit of claim 10,

wherein each respective basic cell includes at least one n-type long channel transistor and at least one p-type long channel transistor;

and

wherein for respective basic cells, respective n-type long channel transistors and respective p-type long channel transistors are disposed side by side.

19. The circuit of claim 10,

wherein horizontal and vertical grid lines form a coordinate system used for placing and routing interconnect lines;

wherein respective basic cells are disposed adjacent to each other such that respective wide channel transistors of such adjacent basic cells share respective first horizontal lines; and

wherein transistors that share such respective first horizontal lines are crossed by multiple vertical lines.

20. The circuit of claim 10,

wherein for each respective basic cell, respective channels of the long channel transistors are substantially orthogonal to respective channels of respective wide channel transistors.

21. The circuit of claim 10,

wherein respective current flow paths of respective long channel transistors are substantially orthogonal to respective current flow paths of respective wide channel transistors.

22. The circuit of claim 10,

wherein the substrate is a p-type substrate and respective basic cells have respective n-type wells and respective p-type transistors are formed in such n-type wells.

23. The circuit of claim 10 and further including:

guard regions formed on the substrate between respective basic cells.

15. A master-slice gate array circuit comprising:

a semiconductor substrate;

a multiplicity of basic cells formed on the substrate, each basic cell including at least one long channel transistor and a plurality of wide channel transistors;

wherein the channel length of each at least one long channel transistor is greater than its channel width; and

wherein the channel width of each wide channel transistor is greater than its channel length;

wherein each respective basic cell includes a respective column of n-type wide channel transistors in which adjacent n-type wide transistors channel share common source/drain regions, a respective column of p-type wide channel transistors in which adjacent p-type wide channel transistors share common source/drain regions, at least one n-type long channel transistor and at least one p-type long channel transistor;

wherein horizontal and vertical grid lines form a coordinate system used for placing and routing interconnect lines; and

wherein for each respective basic cell, source/drains of respective n-type wide channel transistors and source/drains of respective p-type wide channel transistors share respective first horizontal grid lines and respective n-type long channel transistors and respective p-type long channel transistors share respective second horizontal grid lines.

16. The circuit of claim 15,

wherein, for each respective basic cell, source/drains of respective n-type wide channel transistors and source/drains of respective p-type wide channel transistors that share respective first horizontal grid lines are crossed by multiple vertical grid lines and source/drains of respective n-type long channel transistors and source/drains of respective p-type long channel transistors that share respective first horizontal grid lines are crossed by multiple vertical grid lines.

17. The circuit of claim 15,

wherein respective basic cells are aligned such that source/drains of respective n-type wide channel transistors of such aligned basic cells and source/drains of respective p-type wide channel transistors of such aligned basic cells share respective first horizontal grid lines and such that respective n-type long channel transistors of such aligned basic cells and respective p-type long channel transistors of such aligned basic cells share respective second horizontal grid lines.

18. The circuit of claim 17,

wherein for each respective basic cell, respective wide channel transistors and respective long channel transistors are each crossed by multiple vertical grid lines.