Enhanced performance bipolar transistor process

• US 5,369,042 A
• Filed: 03/05/1993
• Issued: 11/29/1994
• Est. Priority Date: 03/05/1993
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Morris, Francis J., Yang, Jau-Yuann, Yuan, Han-Tzong, Plumton, Donald L.
• Primary Examiner(s): Thomas, Tom
• Assistant Examiner(s): NGUYEN, TUAN H
• Application Number:
  US08/026,886
• Time in Patent Office: 634 Days
• Field of Search: 437/31, 437/133, 437/59, 437/55, 437/51, 148/DIG. 72
• US Class Current: 438/313
• CPC Class Codes: H01L 27/0605 integrated circuits made of compound material, e.g. AIIIBV
• CPC Class Codes: H01L 29/20 including, apart from doping materials or other impurities, only AIIIBV compounds
• CPC Class Codes: H01L 29/66318 Heterojunction transistors
• CPC Class Codes: H01L 29/7371 Vertical transistors
• CPC Class Codes: Y10S 148/01 Bipolar transistors-ion implantation
• CPC Class Codes: Y10S 148/072 Heterojunctions

Abstract

This is a method of forming a bipolar transistor comprising: forming a subcollector layer, having a doping type and a doping level, on a substrate; forming a first layer, of the same doping type and a lower doping level than the subcollector layer, over the subcollector layer; increasing the doping level of first and second regions of the first layer; forming a second layer, of the same doping type and a lower doping level than the subcollector layer, over the first layer; increasing the doping level of a first region of the second layer which is over the first region of the first layer, whereby the subcollector layer, the first region of the first layer and the first region of the second layer are the collector of the transistor; forming a base layer over the second layer of an opposite doping type than the subcollector layer; and forming an emitter layer of the same doping type as the subcollector layer over the base layer. Other devices and methods are also disclosed.

Claims

1. A method of forming complementary NPN and PNP bipolar transistors comprising:

a. forming a n-type subcollector layer, having a doping concentration, on a substrate;

b. forming a n-type first layer, of a lower doping concentration than said subcollector layer, over said subcollector layer;

c. increasing said doping concentration of first and second regions of said first layer in an NPN transistor area;

d. counter-doping portions of said n-type subcollector and said n-type first layer, thereby forming a p-type subcollector in a PNP transistor area;

e. forming a n-type second layer, of a lower doping concentration than said n-type subcollector layer, over said first layer;

f. increasing said doping concentration of a first region of said second layer which is over said first region of said first layer, whereby said subcollector layer, said first region of said first layer, and said first region of said second layer are a collector of an NPN transistor;

g. counter-doping a second region of said second layer in said PNP portion of said transistor, whereby said p-type subcollector and said second region of said second layer are a collector of a PNP transistor;

h. forming a n-type base layer over said second layer in said PNP transistor area;

i. forming a p-type emitter layer over said n-type base layer;

j. forming a p-type base layer over said second layer in said NPN transistor area; and

k. forming an n-type emitter layer over said p-type base layer.

2. The method of claim 1, wherein said subcollector layer, said first layer and said second layer are GaAs.

3. The method of claim 1, wherein said subcollector layer, said first layer and said second layer are Si.

4. The method of claim 1, wherein said n-type and said p-type base layers are GaAs.

5. The method of claim 1, wherein said n-type and said p-type emitter layers are AlGaAs.

6. The method of claim 1, further comprising grading layers over said p-type and said n-type emitter layer.

7. The method of claim 1, wherein said NPN and PNP transistors are isolated.

8. The method of claim 7, wherein said isolation is done by oxygen implants.

9. The method of claim 1, wherein base and collector contact areas are isolated.

10. The method of claim 9, wherein said isolation is done with a boron implants.

11. The method of claim 1, further comprising forming base, emitter, and collector contacts.

12. The method of claim 1, further comprising the step of forming p-type extrinsic base regions before forming said p-type base layer and not over said first and second regions of said first layer in said NPN transistor area.

13. The method of claim 12, wherein said p-type extrinsic base region is implanted into said second layer.

14. The method of claim 12, wherein said p-type extrinsic base is grown over said second layer and selectively removed.

15. The method of claim 12, wherein said p-type extrinsic base is selectively grown over said second layer.

16. The method of claim 1, further comprising the step of forming n-type extrinsic base regions before forming said n-type base layer and not over said second region of said second layer in said PNP transistor area.

17. The method of claim 16, wherein said n-type extrinsic base region is implanted into said second layer.

18. The method of claim 16, wherein said n-type extrinsic base is grown over said second layer and selectively removed.

19. The method of claim 16, wherein said n-type extrinsic base is selectively grown over said second layer.