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Method of making thin film transistors

  • US 5,371,025 A
  • Filed: 09/03/1992
  • Issued: 12/06/1994
  • Est. Priority Date: 09/06/1991
  • Status: Expired due to Term
First Claim
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1. A method of making a thin film transistor comprising the steps of:

  • forming a gate electrode on an insulating transparent substrate;

    forming a first insulating layer, an amorphous silicon layer and a second insulating layer in turn on the gate electrode and the insulting transparent substrate;

    coating a photoresist over the second insulating layer and performing a back substrate exposure using the gate electrode as a photo shield mask to form a photoresist pattern;

    baking the photoresist pattern to flow outwardly so that it has a width approximately equal to a length of the gate electrode in order to prevent a channel overlap;

    etching the second insulating layer using the baked photoresist pattern as a mask to form a second insulating layer pattern serving as a channel passivation layer;

    removing thee photoresist pattern from the second insulating layer pattern;

    forming an impurity-doped amorphous silicon layer in the amorphous silicon layer at opposite sides of the second insulating layer pattern;

    depositing a refractory metal layer on the second insulating layer pattern and the impurity-doped amorphous silicon layer and consequently forming a silicide layer between the impurity-doped amorphous silicon layer and the refractory metal layer; and

    patterning the refractory metal layer to form refractory metal layer patterns at opposite sides of the second insulating layer pattern to serve as a source electrode and a drain electrode.

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