Semiconductor member and process for preparing semiconductor member

• US 5,371,037 A
• Filed: 08/05/1991
• Issued: 12/06/1994
• Est. Priority Date: 08/03/1990
• Status: Expired due to Term

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Yonehara, Takao
• Primary Examiner(s): KUNEMUND, ROBERT M
• Application Number:
  US07/740,439
• Time in Patent Office: 1,219 Days
• Field of Search: 156/600, 156/603, 156/605, 156/610, 156/613, 156/614, 156/DIG. 64, 437/86, 437/106
• US Class Current: 438/459
• CPC Class Codes: H01L 21/76243 using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 21/76264 SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands

Abstract

A process for preparing a semiconductor member by forming a member having a non-porous monocrystalline semiconductor region on a porous monocrystalline semiconductor region, bonding the insulating surface of a member to the surface of the non-porous monocrystalline semiconductor region, and then removing the porous monocrystalline semiconductor region by etching.

Claims

1. A process for preparing a semiconductor member comprising the steps of:

forming a member having a non-porous monocrystalline semiconductor region on a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure,

bonding the surface of a member wherein the surface is constituted of an insulating substance onto the surface of said non-porous monocrystalline semiconductor region, and then

removing said porous semiconductor region by etching.

9. A process for preparing a semiconductor member according to claims 1, 2, 3, 4, 5, 6, 7 or 8, wherein said monocrystalline semiconductor comprises silicon.

10. A process for preparing a semiconductor member according to claims 1, 2, 3, 4, 5, 6, 7 or 8, wherein said porous semiconductor region maintaining the monocrystalline structure is P-type.

11. A process for preparing a semiconductor member according to claims 1, 2, 3, 4, 5, 6, 7 or 8, wherein said non-porous monocrystalline semiconductor region has a thickness of 50 microns or less.

12. A process for preparing a semiconductor member according to claims 1, 2, 3, 4, 5, 6, 7 or 8, wherein said bonding step is carried out in an atmosphere containing nitrogen.

13. A process for preparing a semiconductor member according to claims 1, 2, 3, 4, 5, 6, 7 or 8, wherein said bonding step includes a heat treatment in an atmosphere containing nitrogen.

14. A process for preparing a semiconductor member according to claims 1, 2, 3, 4, 5, 6, 7 or 8, wherein said non-porous monocrystalline semiconductor region is formed by epitaxial growth.

15. A process for preparing a semiconductor member according to claims 1, 2, 3, 4, 5, 6, 7 or 8, wherein said non-porous monocrystalline semiconductor region is formed according to the method selected from the molecular beam epitaxial method, the plasma CVD method, the low pressure CVD method, the photo CVD method, the liquid phase growth method or the bias-sputtering method.

16. A process for preparing a semiconductor member according to claims 1, 2, 3, 4, 5, 6, 7 or 8, wherein said porous semiconductor region maintaining a monocrystalline structure is formed by making the non-porous monocrystalline semiconductor region porous by anodization.

17. A process for preparing a semiconductor member according to claim 16, wherein said anodization is carried out in an HF solution.

18. A process for preparing a semiconductor member according to claim 9, wherein said non-porous monocrystalline semiconductor region is intrinsic or N-type.

19. A process for preparing a semiconductor member according to claim 18, wherein said N-type silicon is formed by proton irradiation or epitaxial growth.

20. A process for preparing a semiconductor member according to claims 1, 2, 3, 4, 5, 6, 7 or 8, wherein the member of which the surface is constituted of an insulating substance comprises a light-transmissive material.

21. A process for preparing a semiconductor member according to claim 1, 2, 3, 4, 5, 6, 7, or 8, having the surface constituted of an insulating substance wherein said member is a silicon substrate with an oxidized surface.

22. A process for preparing a semiconductor member according to claims 1 or 2, wherein etching of said porous semiconductor region maintaining the monocrystalline structure is carried out such that the members bonded to each other are covered with an anti-etching material.

23. A process for preparing a semiconductor member according to claim 22, wherein said anti-etching material is silicon nitride.

24. A process for preparing a semiconductor member according to claim 22, wherein said anti-etching material is Apiezon Wax.

33. A process for preparing a semiconductor member according to claim 20, wherein the member of which the surface is constituted of an insulating substance is glass.

34. A process for preparing a semiconductor member according to claim 20, wherein the member of which the surface is constituted of an insulating substance is quartz.

47. A semiconductor member obtained by a process according to any one of claim 1, 2, 3, 4, 5, 6, 7 or 8.

2. A process for preparing a semiconductor member comprising the steps of:

forming a member having a non-porous monocrystalline semiconductor region on a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure,

forming a region constituted of an insulating substance on the non-porous monocrystalline semiconductor side of said member, then

bonding the surface of a member wherein the surface is constituted of an insulating substance onto the surface of the region constituted of said insulating substance, and

removing said porous semiconductor region by etching.

3. A process for preparing a semiconductor member comprising the steps of:

making a non-porous monocrystalline semiconductor member porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure,

forming a non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining the monocrystalline structure,

bonding the surface of a member wherein the surface is constituted of an insulating substance onto the surface of said non-porous monocrystalline semiconductor region, and

removing said porous semiconductor region by etching.

4. A process of preparing a semiconductor member comprising the steps of:

making a non-porous monocrystalline semiconductor member porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure,

forming a non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining a monocrystalline structure,

forming a region constituted of an insulating substance on said non-porous monocrystalline semiconductor region side,

bonding the surface of a member wherein the surface is constituted of an insulating substance onto the surface of said region constituted of the insulating substance, and

removing said porous semiconductor region by etching.

5. A process for preparing a semiconductor member comprising the steps of:

making a first non-porous monocrystalline semiconductor member partially porous to form a porous semiconductor region, said semiconductor region maintaining the monocrystalline structure and a second non-porous monocrystalline semiconductor region,

forming a third non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining the monocrystalline structure,

bonding the surface of a member wherein the surface is constituted of an insulating substance onto the surface of said third non-porous monocrystalline semiconductor region, an

removing said second non-porous monocrystalline semiconductor region by mechanical polishing and removing said porous semiconductor region by etching.

6. A process for preparing a semiconductor member comprising the steps of:

making a first non-porous monocrystalline semiconductor member partially porous to form a porous semiconductor region maintaining the monocrystalline structure and a second non-porous monocrystalline semiconductor region.

forming a third non-porous monocrystalline semiconductor region on said porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure,

forming a region constituted of an insulating substance on said third non-porous monocrystalline semiconductor region side,

bonding the surface of a member wherein the surface is constituted of an insulating substance onto the surface of said third non-porous monocrystalline semiconductor region, and

removing said second non-porous monocrystalline semiconductor region by mechanical polishing and removing said porous semiconductor region by etching.

7. A process for preparing a semiconductor member comprising the steps of:

forming a second monocrystalline semiconductor region of a second electroconduction type on a first monocrystalline semiconductor region of a first electroconduction type,

making said first monocrystalline semiconductor region porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure,

bonding the surface of a member wherein the surface is formed of an insulating substance onto the surface of said second monocrystalline semiconductor region, and

removing said porous semiconductor region by etching.

8. A process for preparing a semiconductor member comprising the steps of:

forming a second monocrystalline semiconductor region of a second electroconduction type on a first monocrystalline semiconductor region of a first electroconduction type,

making said first monocrystalline semiconductor region porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure,

forming a region constituted of an insulating substance on said second monocrystalline semiconductor region side,

bonding the surface of a member wherein the surface is formed of an insulating substance onto the surface of said region constituted of an insulating substance, and

removing said porous semiconductor region by etching.

25. A process for preparing a semiconductor member comprising the steps of:

forming a member having a non-porous monocrystalline semiconductor region on a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure,

bonding the surface of another member onto the surface of said non-porous monocrystalline semiconductor region, and then

removing said porous semiconductor region by etching.

35. A process for preparing a semiconductor member according to claims 25, 26, 27, 28, 29, 30, 31 or 32, wherein said monocrystalline semiconductor comprises silicon.

36. A process for preparing a semiconductor member according to claims 25, 26, 27, 28, 29, 30, 31 or 32 wherein said porous semiconductor region maintaining the monocrystalline structure is P-type.

37. A process for preparing a semiconductor member according to claims 25, 26, 27, 28, 29, 30, 31 or 32, wherein said non-porous monocrystalline semiconductor region has a thickness of 50 microns or less.

38. A process for preparing a semiconductor member according to claims 25, 26, 27, 28, 29, 30, 31 or 32, wherein said bonding step in carried out in an atmosphere containing nitrogen.

39. A process for preparing a semiconductor member according to claims 25, 26, 27, 28, 29, 30, 31 or 32, wherein said bonding step includes a heat treatment in an atmosphere containing nitrogen.

40. A process for preparing a semiconductor member according to claims 25, 26, 27, 28, 29, 30, 31 or 32, wherein said non-porous monocrystalline semiconductor region is formed by epitaxial growth.

41. A process for preparing a semiconductor member according to claim 25, 26, 27, 28, 29, 30, 31 or 32, wherein said non-porous monocrystalline semiconductor region is formed according to the method selected from the molecular beam epitaxial method, the plasma CVD method, the low pressure CVD method, the photo CVD method, the liquid phase growth method or the bias-sputtering method.

42. A process for preparing a semiconductor member according to claims 25, 26, 27, 28, 29, 30, 31 or 32, wherein said non-porous monocrystalline semiconductor region is obtained by making the non-porous monocrystalline porous region porous by anodization.

43. A process for preparing a semiconductor member according to claim 25, 26, 27, 28, 29, 30, 31 or 32, wherein said another member comprises a light-transmissive material.

44. A process for preparing a semiconductor member according to claims 25 or 26, wherein etching of said porous semiconductor region maintaining the monocrystalline structure is carried out such that the members bonded to each other are covered with an anti-etching material.

45. A process for preparing a semiconductor member according to claim 43, wherein said another member is glass.

46. A process for preparing a semiconductor member according to claim 43, wherein said another member is quartz glass.

48. A semiconductor member obtained by a process according to any one of claims 25, 26, 27, 28, 29, 30, 31 or 32.

26. A process for preparing a semiconductor member comprising the steps of:

forming a member having a non-porous monocrystalline semiconductor on a porous semiconductor, said porous semiconductor region maintaining the monocrystalline structure,

forming a region constituted of an insulating substance on the non-porous monocrystalline semiconductor side of said member, then

bonding the surface of another member onto the surface of the region constituted of said insulating substance, and

removing said porous semiconductor region by etching.

27. A process for preparing a semiconductor member comprising the steps of:

making a non-porous monocrystalline semiconductor member porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure,

forming a non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining the monocrystalline structure,

bonding the surface of another member onto the surface of said non-porous monocrystalline semiconductor region, and

removing said porous semiconductor region by etching

28. A process for preparing a semiconductor member comprising the steps of:

making a non-porous monocrystalline semiconductor member porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure,

forming a non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining the monocrystalline structure,

bonding the surface of another member onto the surface of said region constituted of an insulating substance, and

removing said porous semiconductor region by etching.

29. A process for preparing a semiconductor member comprising the steps of:

making a first non-porous monocrystalline semiconductor member partially porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure and a second non-porous monocrystalline semiconductor region,

forming a third non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining the monocrystalline structure,

bonding the surface of another member onto the surface of said third non-porous monocrystalline semiconductor region, and

removing said second non-porous monocrystalline semiconductor region by mechanical polishing, and removing said porous semiconductor region by etching.

30. A process for preparing a semiconductor member comprising the steps of:

making a first non-porous monocrystalline semiconductor member partially porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure and a second non-porous monocrystalline semiconductor region,

forming a third non-porous monocrystalline semiconductor region on said porous semiconductor region maintaining a monocrystalline structure,

forming a region constituted of an insulating substance on said third non-porous monocrystalline semiconductor region side,

bonding the surface of another member onto the surface of said region constituted on the insulating substance, and

removing said second non-porous monocrystalline semiconductor region by mechanical polishing and removing said porous semiconductor region by etching.

31. A process for preparing a semiconductor member comprising the steps of:

forming a second monocrystalline semiconductor region of a second electroconduction type on a first monocrystalline semiconductor region of a first electroconduction type,

making said first monocrystalline semiconductor region porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure,

bonding the surface of another member onto the surface of said second monocrystalline semiconductor region, and

removing said porous semiconductor region by etching.

32. A process for preparing a semiconductor member comprising the steps of:

forming a second monocrystalline semiconductor region of a second electroconduction type on a first monocrystalline semiconductor region of a first electroconduction type,

making said first monocrystalline semiconductor region porous to form a porous semiconductor region, said porous semiconductor region maintaining the monocrystalline structure,

forming a region constituted of an insulating substance on said second monocrystalline semiconductor region side,

bonding the surface of another member onto the surface of said region constituted of an insulating substance, and

removing said porous semiconductor region by etching.