High-frequency high-power transistor
First Claim
Patent Images
1. A high-frequency high-power transistor comprising:
- a package including an input terminal, an output terminal, and a ground terminal;
a transistor chip including at least one transistor cell disposed within said package, each transistor cell having an input side electrically connected to said input terminal for receiving an input signal, an output side electrically connected to said output terminal for supplying an output signal, and a grounded side electrically connected to said ground terminal;
an input capacitor and an output capacitor disposed within said package on opposite sides of said transistor chip; and
a wire interconnecting said output side of said at least one transistor cell to said output capacitor and a wire interconnecting said output side of said at least one transistor cell to said input capacitor wherein said wires are symmetrically disposed relative to said transistor chip and have substantially the same lengths.
1 Assignment
0 Petitions
Accused Products
Abstract
An improved high-frequency high-power transistor includes a transistor chip and capacitors forming an RF shunting internal matching circuit. The capacitors are connected with RF shunting wires to a collector pad to which the transistor chip is die-bonded. The wires have the same lengths and are disposed symmetrically relative to input and output leads of transistor cells within said transistor chip so that they uniformly influence the transistor cells.
-
Citations
17 Claims
-
1. A high-frequency high-power transistor comprising:
-
a package including an input terminal, an output terminal, and a ground terminal; a transistor chip including at least one transistor cell disposed within said package, each transistor cell having an input side electrically connected to said input terminal for receiving an input signal, an output side electrically connected to said output terminal for supplying an output signal, and a grounded side electrically connected to said ground terminal; an input capacitor and an output capacitor disposed within said package on opposite sides of said transistor chip; and a wire interconnecting said output side of said at least one transistor cell to said output capacitor and a wire interconnecting said output side of said at least one transistor cell to said input capacitor wherein said wires are symmetrically disposed relative to said transistor chip and have substantially the same lengths. - View Dependent Claims (2, 8, 11, 12, 13)
-
-
3. A high-frequency high-power transistor comprising:
-
a package including an input terminal, an output terminal, and a ground terminal; a transistor chip including at least one transistor cell disposed within said package, each transistor cell having an input side electrically connected to said input terminal for receiving an input signal, an output side electrically connected to said output terminal for supplying an output signal, a grounded side electrically connected to said ground terminal, and opposed first and second sides; an input capacitor and an output capacitor disposed within said package between said transistor chip and said input terminal and between said transistor chip and said output terminal, respectively, the first side of said at least one transistor cell facing said input capacitor and the second side of said at least one transistor cell facing said output capacitor; and first and second wires interconnecting said output side of said at least one transistor cell to said output capacitor from a location adjacent the first side of said at least one transistor cell and from a location adjacent the second side of said at least one transistor cell, respectively, said first and second wires having substantially the same lengths. - View Dependent Claims (4, 9, 14, 15)
-
-
5. A high-frequency high-power transistor comprising:
-
a package including an input terminal, an output terminal, and a ground terminal; a transistor chip disposed within said package, said transistor chip including a plurality of transistor cells and a plurality of RF shunting capacitors, said transistor cells and capacitors being disposed along a strident line, alternating with each other; two ground pads disposed within said package and electrically connected to said ground terminal; and wires interconnecting each of said capacitors to each of said ground pads, said wires connecting said capacitors to said ground pads having substantially the same length. - View Dependent Claims (6, 7, 10, 16, 17)
-
Specification