High-frequency high-power transistor

• US 5,371,405 A
• Filed: 02/02/1993
• Issued: 12/06/1994
• Est. Priority Date: 02/04/1992
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Kagawa, Kazuhisa
• Primary Examiner(s): Larkins, William D.
• Assistant Examiner(s): Arroyo, Teresa M.
• Application Number:
  US08/012,521
• Time in Patent Office: 672 Days
• Field of Search: 257/666, 257/664, 257/584, 257/532, 257/728, 257/259, 257/256, 257/724, 257/725
• US Class Current: 257/664
• CPC Class Codes: H01L 2223/6644 Packaging aspects of high-frequency amplifiers amplifiers per se H03F
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/4911 the connectors being bonded to at least one common bonding area, e.g. daisy chain
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01028 Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01042 Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01074 Tungsten [W]
• CPC Class Codes: H01L 2924/15153 the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/1517 Multilayer substrate
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/30111 : matching

Abstract

An improved high-frequency high-power transistor includes a transistor chip and capacitors forming an RF shunting internal matching circuit. The capacitors are connected with RF shunting wires to a collector pad to which the transistor chip is die-bonded. The wires have the same lengths and are disposed symmetrically relative to input and output leads of transistor cells within said transistor chip so that they uniformly influence the transistor cells.

Claims

1. A high-frequency high-power transistor comprising:

a package including an input terminal, an output terminal, and a ground terminal;

a transistor chip including at least one transistor cell disposed within said package, each transistor cell having an input side electrically connected to said input terminal for receiving an input signal, an output side electrically connected to said output terminal for supplying an output signal, and a grounded side electrically connected to said ground terminal;

an input capacitor and an output capacitor disposed within said package on opposite sides of said transistor chip; and

a wire interconnecting said output side of said at least one transistor cell to said output capacitor and a wire interconnecting said output side of said at least one transistor cell to said input capacitor wherein said wires are symmetrically disposed relative to said transistor chip and have substantially the same lengths.

2. A high-frequency high-power transistor according to claim 1 including a collector pad within said package wherein said transistor chip is bonded to said collector pad disposed within said package.

8. A high-frequency high-power transistor according to claim 1 wherein said input and output capacitors are MOS capacitors.

11. A high-frequency high-power transistor according to claim 1 including a third capacitor adjacent said input capacitor.

12. A high-frequency high power transistor according to claim 11 including a wire interconnecting said input terminal to said third capacitor and to said input side of said at least one transistor cell and a wire interconnecting said output terminal to said output side of said at least one transistor cell.

13. A high-frequency high power transistor according to claim 1 including two ground pads disposed within the package on opposite sides of said transistor chip and a wire connecting the grounded side of said at least one transistor cell to both of said ground pads.

3. A high-frequency high-power transistor comprising:

a package including an input terminal, an output terminal, and a ground terminal;

a transistor chip including at least one transistor cell disposed within said package, each transistor cell having an input side electrically connected to said input terminal for receiving an input signal, an output side electrically connected to said output terminal for supplying an output signal, a grounded side electrically connected to said ground terminal, and opposed first and second sides;

an input capacitor and an output capacitor disposed within said package between said transistor chip and said input terminal and between said transistor chip and said output terminal, respectively, the first side of said at least one transistor cell facing said input capacitor and the second side of said at least one transistor cell facing said output capacitor; and

first and second wires interconnecting said output side of said at least one transistor cell to said output capacitor from a location adjacent the first side of said at least one transistor cell and from a location adjacent the second side of said at least one transistor cell, respectively, said first and second wires having substantially the same lengths.

4. A high-frequency high-power transistor according to claim 3 including a collector pad within said package wherein said transistor chip includes a plurality of transistor cells and is bonded to said collector pad disposed within said package.

9. A high-frequency high-power transistor according to claim 3 wherein said input and output capacitors are MOS capacitors.

14. A high-frequency high power transistor according to claim 3 including a wire interconnecting said input terminal to said input capacitor and to said input side of said at least one transistor cell and a wire interconnecting said output terminal to said output side of said at least one transistor cell.

15. A high-frequency high power transistor according to claim 3 including two ground pads disposed within the package on opposite sides of said transistor chip and a wire connecting the grounded side of said at least one transistor cell to both of said ground pads.

5. A high-frequency high-power transistor comprising:

a package including an input terminal, an output terminal, and a ground terminal;

a transistor chip disposed within said package, said transistor chip including a plurality of transistor cells and a plurality of RF shunting capacitors, said transistor cells and capacitors being disposed along a strident line, alternating with each other;

two ground pads disposed within said package and electrically connected to said ground terminal; and

wires interconnecting each of said capacitors to each of said ground pads, said wires connecting said capacitors to said ground pads having substantially the same length.

6. A high-frequency high-power transistor according to claim 5 including a plurality of conductors wherein each of said capacitors includes an electrode connected by one of said conductors to the corresponding electrode of the closest capacitor with one transistor cell interposed therebetween so that said electrodes of said capacitors are at the same potential.

7. A high-frequency high-power transistor according to claim 6 wherein the length of each of said conductors is one half wavelength at an operating frequency of said transistor.

10. A high-frequency high-power transistor according to claim 5 wherein said RF shunting capacitors are MOS capacitors.

16. A high-frequency high power transistor according to claim 5 including a wire interconnecting said input terminal to said input capacitor and to said input side of a corresponding transistor cell and a wire interconnecting said output terminal to said output side of the corresponding transistor cell.

17. A high-frequency high power transistor according to claim 5 wherein said two ground pads are disposed on opposite sides of said transistor chip and including a respective wire connecting said grounded side of said transistor cells to both of said ground pads.