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Surface emitting laser and method of manufacturing the same

  • US 5,373,520 A
  • Filed: 08/11/1993
  • Issued: 12/13/1994
  • Est. Priority Date: 08/12/1992
  • Status: Expired due to Term
First Claim
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1. A surface emitting laser comprising:

  • a first DBR mirror composed of a semiconductor multilayer film formed on a semiconductor substrate;

    a first cladding layer formed on said first DBR mirror;

    an active region layer formed on said first cladding layer;

    a second cladding layer formed above said active region layer;

    a current constriction layer formed on said second cladding layer and composed of a semiconductor material having a wider forbidden band than those of said active region layer and said second cladding layer;

    an opening formed in said current constriction layer;

    a third cladding layer formed in said opening and on said current constriction layer and composed of a semiconductor material having a narrower forbidden band than said current constriction layer;

    a second DBR mirror composed of a multilayer film formed on said third cladding layer; and

    a first electrode and a second electrode to pass current between said first and third cladding layers.

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