Surface emitting laser and method of manufacturing the same

• US 5,373,520 A
• Filed: 08/11/1993
• Issued: 12/13/1994
• Est. Priority Date: 08/12/1992
• Status: Expired due to Term

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Ikeda, Tatsuroh, Matsuda, Manabu, Ishikawa, Hiroshi, Otsubo, Koji, Shoji, Hajime
• Primary Examiner(s): Epps, Georgia Y.
• Application Number:
  US08/104,643
• Time in Patent Office: 489 Days
• Field of Search: 372/45, 372/46, 372/96, 372/99, 437/129
• US Class Current: 372/45.01
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/2222 having special electric properties
• CPC Class Codes: H01S 5/3428 layer orientation perpendicular to the substrate
• CPC Class Codes: H01S 5/34313 with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs

Abstract

A current constriction layer surrounding a vertical-cavity region is formed in a cladding layer of a surface emitting laser. The forbidden band width of the material forming this current constriction layer is wider than the forbidden band width of a material forming the cladding layer. Further, the current constriction layer and the cladding layer are formed of semiconductors, and conduction types thereof are different from each other. Further, the upper surface of the cladding layer covering the current constriction layer has a step in the periphery of vertical-cavity region.

Claims

1. A surface emitting laser comprising:

a first DBR mirror composed of a semiconductor multilayer film formed on a semiconductor substrate;

a first cladding layer formed on said first DBR mirror;

an active region layer formed on said first cladding layer;

a second cladding layer formed above said active region layer;

a current constriction layer formed on said second cladding layer and composed of a semiconductor material having a wider forbidden band than those of said active region layer and said second cladding layer;

an opening formed in said current constriction layer;

a third cladding layer formed in said opening and on said current constriction layer and composed of a semiconductor material having a narrower forbidden band than said current constriction layer;

a second DBR mirror composed of a multilayer film formed on said third cladding layer; and

a first electrode and a second electrode to pass current between said first and third cladding layers.

2. A surface emitting laser according to claim 1, wherein the upper surface of said third cladding layer has a step between the region above said current constriction layer and the region above said opening.

3. A surface emitting laser according to claim 1, wherein said active region layer has a single quantum-well structure.

4. A surface emitting laser according to claim 1, wherein said active region layer has a multiple quantum-well structure.

5. A surface emitting laser according to claim 1, wherein said second DBR mirror is formed of a semiconductor multilayer film.

6. A surface emitting laser according to claim 1, wherein said second and third cladding layers are composed of a first conduction type semiconductor and said current constriction layer is composed of a second conduction type semiconductor.

7. A surface emitting laser according to claim 1, wherein said second DBR mirror exists directly above said opening, and said second electrode is formed on the upper surface of said third cladding layer therearound.

8. A surface emitting laser according to claim 7, wherein an impurity containing semiconductor layer is interposed between said second electrode and said third cladding layer.

9. A surface emitting laser according to claim 1, wherein said first electrode is formed into a ring-shape at a portion corresponding to a region surrounding said opening on the underside of said semiconductor substrate.

10. A surface emitting laser according to claim 1, wherein said semiconductor substrate is composed of GaAs, said first DBR mirror is composed of a multilayer film in which AlAs and GaAs are laminated alternately, said first cladding layer is composed of AlGaAs, said active region layer is composed of a quantum-well layer having a GaAs barrier layer and an InGaAs well layer, said second and third cladding layers are composed of AlGaAs, said current constriction layer is composed of InGaP, and said second DBR mirror is composed of a multilayer film in which AlAs and GaAs are laminated alternately.

16. A surface emitting laser according to claim 1, wherein said second electrode is formed on said second DBR mirror.

17. A surface emitting laser according to claim 1, wherein said second DBR mirror is formed of a dielectric multilayer film.

11. A method of manufacturing a surface emitting laser comprising the steps of:

forming a first DBR mirror by laminating a semiconductor multilayer film on a semiconductor substrate;

laminating a first cladding layer on said first DBR mirror;

forming an active region layer on said first cladding layer;

laminating a second cladding layer above said active region layer;

forming a current constriction layer having a wider forbidden band than those of said active region layer and said second cladding layer and composed of a material which is etched selectively for said second cladding layer;

forming an opening which becomes a current path by applying patterning to said current constriction layer;

forming a third cladding layer on said current constriction layer and said second cladding layer exposed in said opening;

forming a multilayer film constituting said second DBR mirror on said third cladding layer; and

forming a first electrode and a second electrode to pass current between said first and third cladding layers.

12. A method of manufacturing a surface emitting laser according to claim 11, further comprising the step of interposing an etching stop layer between said second cladding layer and said current constriction layer.

13. A method of manufacturing a surface emitting laser according to claim 11, further comprising the step of forming said second DBR mirror of a semiconductor multilayer film.

14. A method of manufacturing a surface emitting laser according to claim 11, further comprising the steps of, after laminating said multilayer film constituting said second DBR mirror, applying patterning to said multilayer film so as to have it remain immediately above said opening, and forming said second electrode connected to the upper surface of said third cladding layer around said multilayer film applied with patterning.

15. A method of manufacturing a surface emitting laser according to claim 14, further comprising the step of interposing an etching stop semiconductor layer of high impurity content having a film thickness of 1/4 wavelength between said multilayer film constituting said second DBR mirror and said second cladding layer.

18. A method of manufacturing a surface emitting laser according to claim 11, further comprising the step of forming said second DBR mirror of a dielectric multilayer film.