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Operational amplifier using bipolar junction transistors in silicon-on-sapphire

  • US 5,374,567 A
  • Filed: 05/20/1993
  • Issued: 12/20/1994
  • Est. Priority Date: 05/20/1993
  • Status: Expired due to Fees
First Claim
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1. An improvement to a method for fabricating bipolar junction transistors in silicon-on-sapphire in which base and emitter regions are formed in a silicon wafer on a sapphire substrate, the improvement including:

  • recrystalizing said silicon wafer prior to the formation of said base and emitter regions;

    forming said base and emitter regions through implantation; and

    annealing said emitter regions at a temperature not exceeding 950 degrees Celsius.

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