Method for preparing semiconductor member
First Claim
Patent Images
1. A method for preparing a semiconductor member, characterized by including the steps of:
- making a silicon substrate porous;
forming a non-porous silicon monocrystalline layer on said porous silicon substrate at a first temperature;
bonding a surface of said non-porous silicon monocrystalline layer on to another substrate having an insulating material on the surface thereof;
etching the porous silicon by removing said porous silicon of said bonded substrate by chemical etching; and
forming a monocrystalline silicon layer on said non-porous silicon monocrystalline layer by epitaxial growth at a second temperature higher than said first temperature.
0 Assignments
0 Petitions
Accused Products
Abstract
A method for preparing a semiconductor member comprising steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on the porous silicon substrate at a first temperature; bonding a surface of the non-porous silicon monocrystalline layer on to another substrate having an insulating material on the surface thereof; etching the porous silicon by removing the porous silicon of the bonded substrate by chemical etching; and forming a monocrystalline silicon layer on the non-porous silicon monocrystalline layer by epitaxial growth at a second temperature higher than the first temperature.
-
Citations
11 Claims
-
1. A method for preparing a semiconductor member, characterized by including the steps of:
-
making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said porous silicon substrate at a first temperature; bonding a surface of said non-porous silicon monocrystalline layer on to another substrate having an insulating material on the surface thereof; etching the porous silicon by removing said porous silicon of said bonded substrate by chemical etching; and forming a monocrystalline silicon layer on said non-porous silicon monocrystalline layer by epitaxial growth at a second temperature higher than said first temperature. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
Specification