Method of curing thin films of organic dielectric material

• US 5,376,586 A
• Filed: 05/19/1993
• Issued: 12/27/1994
• Est. Priority Date: 05/19/1993
• Status: Expired due to Term

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Beilin, Solomon I., Chou, William T., Wang, Wen-chou V.
• Primary Examiner(s): Thomas, Tom
• Assistant Examiner(s): DANG, TRUNG Q
• Application Number:
  US08/064,224
• Time in Patent Office: 587 Days
• Field of Search: 437/195, 437/928, 148/DIG. 46, 430/296, 430/330
• US Class Current: 427/496
• CPC Class Codes: H01L 21/481 Insulating layers on insulating parts, with or without metallisation
• CPC Class Codes: H01L 21/4857 Multilayer substrates multilayer metallisation on monolayer substrate H01L21/4846
• CPC Class Codes: H05K 2201/0154 Polyimide
• CPC Class Codes: H05K 2203/092 Particle beam, e.g. using an electron beam or an ion beam
• CPC Class Codes: H05K 2203/1105 Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating
• CPC Class Codes: H05K 3/4673 Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer similar methods for protective coatings H05K3/28

Abstract

A method of curing an organic dielectric layer, such as polyimide, used in a multichip module is disclosed. The method comprises heating the uncured polyimide layer to a temperature above its glass transition temperature, and irradiating the layer with a uniform flux of electrons, as in an e-beam apparatus. The process reduces deterioration at the interface between the dielectric films and the metal layers which when high temperature thermal curing is utilized, and reduces the stress of the resulting film. Multiple dielectric layers can be applied in this manner.

Claims

1. A method of curing a thin film of organic dielectric material comprising the steps of:

(a) applying a thin film of said dielectric material on a base substrate;

(b) raising said organic dielectric material to an elevated temperature above the glass transition temperature of the uncured material and less than the glass transition of the fully cured material; and

(c) flood irradiating said material with a flux of electrons while the material is at said elevated temperature.

2. The method of claim 1 wherein said thin film of said dielectric material is at least 30 μ

m in thickness.

3. The method of claim 2 wherein said elevated temperature is between 150°

to 250°

C.

4. The method of claim 1 wherein said dielectric material is a polyimide precursor dissolved in a solvent when it is applied to said substrate.

5. The method of claim 1 wherein said step of raising the temperature of said layer and said step of flood irradiating are performed simultaneously.

6. The method of claim 1 wherein said layer is raised to a temperature above the glass transition temperature of the uncured material before the step of flood irradiation is commenced.

7. A method of forming a polyimide layer on an integrated circuit chip carrier, comprising the steps of:

(a) providing a base substrate,

(b) applying a uniformly thick liquid layer of a polyimide precursor material dissolved in a solvent on said substrate, (c) raising the temperature of said layer to a temperature above the glass transition temperature of the solvent-free polyimide precursor material and less than the glass transition of the fully cured material,

(d) flood irradiating said layer with electrons while the layer is at said raised temperature, such that said layer is cured, and

(e) forming a patterned metal film on the exposed surface of said cured layer.

8. The method of claim 7 wherein multiple polyimide layers are formed by repeating the sequence of steps of (b)-(d).

9. The method of claim 7 further comprising the step of forming vias through said cured layer.