Durable low-emissivity solar control thin film coating

• US 5,377,045 A
• Filed: 09/24/1993
• Issued: 12/27/1994
• Est. Priority Date: 05/10/1990
• Status: Expired due to Term

• Current Assignee: Von Ardenne Anlagentechnik GmbH
• Original Assignee: BOC Group, Inc. (Messer Adolf Family)
• Inventors: Belkind, Abraham I., Laird, Ronald E., Wolfe, Jesse D.
• Primary Examiner(s): Sugarman, Scott J.
• Assistant Examiner(s): PAPALAS, MICHAEL
• Application Number:
  US08/126,724
• Time in Patent Office: 459 Days
• Field of Search: 359/360, 359/585, 359/586, 359/584, 359/588, 427/166, 427/167
• US Class Current: 359/585
• CPC Class Codes: C03C 17/36 at least one coating being a metal
• CPC Class Codes: C03C 17/3618 Coatings of type glass/inorganic compound/other inorganic layers, at least one layer being metallic
• CPC Class Codes: C03C 17/3626 one layer at least containing a nitride, oxynitride, boronitride or carbonitride
• CPC Class Codes: C03C 17/3642 the multilayer coating containing a metal layer
• CPC Class Codes: C03C 17/3652 the coating stack containing at least one sacrificial layer to protect the metal from oxidation
• CPC Class Codes: C03C 17/366 Low-emissivity or solar control coatings
• CPC Class Codes: C03C 2217/40 Coatings comprising at least one inhomogeneous layer
• CPC Class Codes: C03C 2217/78 Coatings specially designed to be durable, e.g. scratch-resistant
• CPC Class Codes: G02B 5/282 reflecting for infrared and transparent for visible light, e.g. heat reflectors, laser protection

Abstract

An infrared reflecting interference filter capable of transmitting a desired proportion of visible radiation while reflecting a large portion of incident solar radiation is provided. The filter consists of a transparent substrate coated first with a dielectric layer, next a partially metal reflectance layer, and finally an outer protective dielectric layer. In addition, between each metal-dielectric interface is deposited a nucleation or glue layer that facilitates adhesions and improves chemical and mechanical resistance. The interference filters are durable and can be modified to provide a full range of optical and electrical characteristics. The dielectric layer can comprise of composite films consisting of silicon nitride in combination with zirconium nitride, titanium nitride, and/or hafnium nitride.

Claims

1. A thin film interference filter having a substantially neutral visible reflected color, comprising:

a transparent substrate;

a first substantially transparent dielectric layer having a refractive index within a range of approximately 2.0 and 2.7;

a first metal precoat layer;

a partially reflective metal layer;

a second metal precoat layer; and

a second substantially transparent dielectric layer comprising silicon nitride.

2. The thin film interference filter as defined in claim 1 wherein said first dielectric layer comprises of titanium oxide.

3. The thin film interference filter as defined in claim 2 wherein the first dielectric layer has a thickness ranging from approximately 200 to 500 Å

and the second dielectric layer has a thickness ranging from approximately 350 to 500 Å

.

4. The thin film interference filter as defined in claim 2 wherein said second dielectric layer comprises a composite of silicon nitride and zirconium nitride, and wherein the first dielectric layer has a thickness ranging from approximately 200 to 500 Å

and the second dielectric layer has a thickness ranging from approximately 300 to 500 Å

.

5. The thin film interference filter as defined in claim 2 wherein said second dielectric layer comprises a composite of silicon nitride and one or more other nitrides selected from the group consisting of zirconium nitride, titanium nitride, and hafnium nitride, and wherein said second dielectric layer comprises of approximately 60 to 95% by weight of silicon nitride, and wherein the first dielectric layer has a thickness ranging from approximately 200 to 500 Å

and the second dielectric layer has a thickness ranging from approximately 350 to 500 Å

.

6. The thin film interference filter as defined in claim 1 wherein said first dielectric layer comprises of silicon nitride.

7. The thin film interference filter as defined in claim 6 wherein the first dielectric layer has a thickness ranging from approximately 200 to 500 Å

and the second dielectric layer has a thickness ranging from approximately 350 to 500 Å

.

8. The thin film interference filter as defined in claim 6 wherein said second dielectric layer comprises a composite of silicon nitride and zirconium nitride, and wherein the first dielectric layer has a thickness ranging from approximately 200 to 500 Å

and the second dielectric layer has a thickness ranging from approximately 300 to 500 Å

.

9. The thin film interference filter as defined in claim 6 wherein said second dielectric layer comprises a composite of silicon nitride and one or more other nitrides selected from the group consisting of zirconium nitride, titanium nitride, and hafnium nitride, and wherein said second dielectric layer comprises of approximately 60 to 95% by weight of silicon nitride, and wherein the first dielectric layer has a thickness ranging from approximately 200 to 500 Å

and the second dielectric layer has a thickness ranging from approximately 350 to 500 Å

.

10. The thin film interference filter as defined in claim 1 wherein said first dielectric layer comprises a composite of silicon nitride and zirconium nitride.

11. The thin film interference filter as defined in claim 1 wherein said first dielectric layer comprises a composite of silicon nitride and one or more other nitrides selected from the group consisting of zirconium nitride, titanium nitride, and hafnium nitride, wherein said first dielectric layer comprises of approximately 60 to 95% by weight of silicon nitride.

12. The thin film interference filter as defined in claim 11 wherein the first dielectric layer has a thickness ranging from approximately 200 to 500 Å

and the second dielectric layer has a thickness ranging from approximately 350 to 500 Å

.

13. The thin film interference filter as defined in claim 11 wherein said second dielectric layer comprises a composite of silicon nitride and zirconium nitride, and wherein the first dielectric layer has a thickness ranging from approximately 200 to 500 Å

and the second dielectric layer has a thickness ranging from approximately 350 to 500 Å

.

14. The thin film interference filter as defined in claim 11 wherein said second dielectric layer comprises a composite of silicon nitride and one or more other nitrides selected from the group consisting of zirconium nitride, titanium nitride, and hafnium nitride, and wherein said second dielectric layer comprises of approximately 60 to 95% by weight of silicon nitride, and wherein the first dielectric layer has a thickness ranging from approximately 200 to 500 Å

and the second dielectric layer has a thickness ranging from approximately 350 to 500 Å

.

15. The thin film interference filter as defined in either claims 5, 9, or 14 wherein one or both metal precoat layers is formed from a metal selected from the group consisting of nickel, chromium, tungsten, and platinum and alloys thereof and wherein said partially reflective metal layer is formed from a metal selected from the group consisting of silver, gold, copper, and platinum.

16. The thin film interference filter as defined in claim 15 wherein one or both precoat layers is a metal film wherein the metal elements comprise approximately 80 to 95 weight % nickel and 5 to 20% chromium.

17. A method for the production of a durable thin film interference filter on a transparent substrate, with said filter having a substantially neutral visible reflected color, comprising the steps, in sequence, of:

reactively sputtering a first substantially transparent dielectric layer having a refractive index within a range of approximately 2.0 to 2.7 onto said substrate;

depositing a first metal precoat layer;

depositing a partially reflective metal layer;

depositing a second metal precoat layer; and

reactively sputtering a second substantially transparent protective dielectric layer comprising silicon nitride onto said second metal precoat layer, which comprises the steps of;

(a) providing a cylindrical magnetron having a silicon coated rotatable target and having magnetic means disposed at an angle of approximately 30°

to 80°

from normal relative to said substrate; and

(b) moving said substrate towards the rotatable target so that dielectric material reactively sputtered is focused onto the substrate at an acute angle as the substrate approaches the target in order to reduce the intrinsic stress of the second dielectric layer that is formed.

18. The method for the production of a durable thin film interference filter as defined in claim 17 wherein the step of reactively sputtering the second dielectric layer comprises of:

(a) providing a cylindrical magnetron that is coated with a target material comprising silicon and one or more metals selected from the group consisting of zirconium, titanium, and hafnium; and

(b) reactively sputtering in an atmosphere containing nitrogen so that the second dielectric layer comprises a composite of silicon nitride and one of the nitrides selected from the group consisting of zirconium nitride, titanium nitride, and hafnium nitride, and wherein said second dielectric layer comprises of approximately 60 to 95% by weight of silicon nitride.

19. The method for the production of a durable thin film interference filter as defined in either claim 17 or 18 wherein said magnetic means is disposed at an angle of approximately 45°

.

20. The method for the production of a durable thin film interference filter as defined in claim 19 wherein the first dielectric layer comprises silicon nitride or titanium oxide.

21. A method for the production of a durable thin film interference filter on a transparent substrate, with said filter having a substantially neutral visible reflected color, comprising the steps, in sequence, of:

reactively sputtering a first substantially transparent dielectric layer having a refractive index within a range of approximately 2.0 to 2.7 onto said substrate, wherein said first dielectric layer comprises a composite of silicon nitride and one or more other nitrides selected from the group consisting of zirconium nitride, titanium nitride, and hafnium nitride, wherein said first dielectric layer comprises of approximately 60 to 95% by weight of silicon nitride onto said substrate;

depositing a first metal precoat layer;

depositing a partially reflective metal layer;

depositing a second metal precoat layer; and

reactively sputtering a second substantially transparent protective dielectric layer onto said second metal precoat layer.

22. The method for the production of a durable thin film interference filter as defined in claim 21 wherein the second dielectric layer comprises of silicon nitride.

23. The method for the production of a durable thin film interference filter as defined in claim 21 wherein the second dielectric layer comprises a composite of silicon nitride and one or more other nitrides selected from the group consisting of zirconium nitride, titanium nitride, and hafnium nitride, and wherein said second dielectric layer comprises of approximately 60 to 95% by weight of silicon nitride.

24. A method for the production of a durable thin film interference filter on a transparent substrate, with said filter having a substantially neutral visible reflected color, comprising the steps, in sequence, of:

reactively sputtering a first substantially transparent dielectric layer having a refractive index within a range of approximately 2.0 to 2.7 onto said substrate;

depositing a first metal precoat layer;

depositing a partially reflective metal layer;

depositing a second metal precoat layer; and

reactively sputtering a second substantially transparent protective dielectric layer onto said metal precoat layer wherein said second dielectric layer is a composite comprising of silicon nitride and one or more other nitrides selected from the group consisting of zirconium nitride, titanium nitride, and hafnium nitride, and wherein said second dielectric layer comprises of approximately 60 to 95% by weight of silicon nitride.

25. The method for the production of a durable thin film interference filter as defined in claim 24 wherein the first dielectric layer comprises silicon nitride or titanium oxide.