Non-contact temperature measurement of a film growing on a substrate

• US 5,377,126 A
• Filed: 09/13/1991
• Issued: 12/27/1994
• Est. Priority Date: 09/13/1991
• Status: Expired due to Fees

• Current Assignee: Massachusetts Institute of Technology
• Original Assignee: Massachusetts Institute of Technology
• Inventors: Choi, Byungin, Flik, Markus I., Anderson, Alfredo
• Primary Examiner(s): Voeltz, Emanuel T.
• Assistant Examiner(s): Stamber, Eric W.
• Application Number:
  US07/759,427
• Time in Patent Office: 1,201 Days
• Field of Search: 340/589, 427/8, 427/9, 427/10, 374/7, 374/120, 374/121, 374/164, 204/298.03, 204/298.11, 364/562, 364/563, 364/557
• US Class Current: 700/300
• CPC Class Codes: G01J 2005/0074 having separate detection of emissivity
• CPC Class Codes: G01J 5/0003 for sensing the radiant heat transfer of samples, e.g. emittance meter
• CPC Class Codes: G01J 5/0007 of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
• CPC Class Codes: G01J 5/53 Reference sources, e.g. standard lamps; Black bodies
• CPC Class Codes: G01J 5/802 by correcting for emissivity
• CPC Class Codes: Y10S 505/829 Electrical computer or data processing system
• CPC Class Codes: Y10S 505/842 Measuring and testing

Abstract

Apparatus and method for non-contact temperature measurement of a film growing on a substrate which accounts for the change in emissivity due to the change in film thickness. The system employs an adaptively calibrated pyrometer wherein the substrate emittance is continuously computed so that the temperature measurement is accurate regardless of the emittance variation. The new system is easily constructed by adding data processing system software and hardware to conventional pyrometers.

Claims

1. Apparatus for controlling the temperature of a surface of a film-substrate composite while the film is undergoing a change in thickness, comprising:

heater apparatus for heating the film-substrate composite;

detector apparatus for detecting radiance from the surface of the film-substrate composite and generating an electronic radiance signal corresponding to the detected radiance;

computing apparatus including means for generating an electronic temperature signal which corresponds to the temperature of the surface of the film-substrate composite, said generating means converting the electronic radiance signal to the electronic temperature signal by use of a radiance/temperature relation comprising;

##EQU5## where;

S(t) is the electronic radiance signal at time t,

ε

(λ

,t) is the emissivity function at wavelength λ and

time t and depends on the film thickness d₁, where d₁ changes with time,

T(t) is the real temperature of the film-substrate composite,

T_b is the equivalent blackbody temperature of the film-substrate composite,

e_b is the blackbody hemispherical emissive power,

λ

₁ and λ

₂ are the lower and upper wavelength limits,

R(λ

) is the spectral responsivity, where R(λ

)=R_d (λ

)τ

_o (λ

),

R_d (λ

) is the electronic radiance signal of the detector apparatus per unit energy, where R_d (λ

)=dS/dΦ

,

τ

_o (λ

) is the spectral transmittance of all optical elements,

Φ

is the radiance energy arriving at the detector apparatus per unit time,

t is time,

λ

is the wavelength of the radiance, and

C is a geometric constant based on the detector apparatus and is independent of wavelength; and

control apparatus responsive to the electronic temperature signal for controlling the output of the heater apparatus to cause the temperature of the surface of the film-substrate composite to approach a predetermined value.

2. A method for controlling the temperature of a surface of a film-substrate composite while the film is undergoing a change in thickness, comprising:

providing a substrate;

heating the substrate with a heater apparatus;

applying a film to a surface of the substrate to obtain a film-substrate composite;

detecting radiance from the surface of the film-substrate composite and generating an electronic radiance signal corresponding to the detected radiance;

generating an electronic temperature signal, which corresponds to the temperature of the surface of the film-substrate composite, from the electronic radiance signal, wherein a radiance/temperature relation comprises;

##EQU6## where;

S(t) is the electronic radiance signal at time t,

ε

(λ

,t) is the emissivity function at wavelength λ and

time t and depends on the film thickness d₁, where d₁ changes with time,

T(t) is the real temperature of the film substrate composite,

T_b is the equivalent blackbody temperature of the film-substrate composite,

e_b is the blackbody hemispherical emissive power,

λ

₁ and λ

₂ are the lower and upper wavelength limits,

R(λ

) is the spectral responsivity, where R(λ

)=R_d (λ

)τ

_o (λ

),

R_d (λ

) is the electronic radiance signal of the detector apparatus per unit energy, where R_d (λ

)=dS/dΦ

,

τ

_o (λ

) is the spectral transmittance of all optical elements,

Φ

is the radiance energy arriving at the detector apparatus per unit time,

t is time,

λ

is the wavelength of the radiance, and

C is a geometric constant based on the detector apparatus and is independent of wavelength; and

controlling the output of the heater apparatus with the electronic temperature signal to cause the temperature of the surface of the film-substrate composite to approach a predetermined value.

3. Apparatus for controlling the temperature of a surface of a film-substrate composite while the film is undergoing a change in thickness, comprising:

heater apparatus for heating the film-substrate composite;

detector apparatus for detecting radiance from the surface of the film-substrate composite and generating an electronic radiance signal corresponding to the detected radiance;

computing apparatus including means for generating an electronic temperature signal which corresponds to the temperature of the surface of the film-substrate composite, said generating means converting the electronic radiance signal to the electronic temperature signal by use of a radiance/temperature relation which includes an emissivity function ε

that varies with the wavelength of the radiance and the film thickness and depends on the reflectance R of the film-substrate composite, the emissivity function ε

comprising;

##EQU7## and where;

n₁ is the complex refractive index of the film defined by n₁ =n₁ -ik₁,

n₂ is the complex refractive index of the substrate defined by n₂ =n₂ -ik₂,

d₁ is the film thickness which varies over time t,

k₁ is the extinction coefficient of the film,

k₂ is the extinction coefficient of the substrate,

r₁ is the Fresnel coefficient of a film-vacuum interface,

r₂ is the Fresnel coefficient of the film-substrate interface,

δ

₁ is the phase change across the thickness of the film, and

λ

is the wavelength of the detected radiance; and

control apparatus responsive to the electronic temperature signal for controlling the output of the heater apparatus to cause the temperature of the surface of the film substrate composite to approach a predetermined value.

4. A method for controlling the temperature of a surface of a film-substrate composite while the film is undergoing a change in thickness, comprising:

providing a substrate;

heating the substrate with a heater apparatus;

applying a film to a surface of the substrate to obtain a film-substrate composite;

detecting radiance from the surface of the film-substrate composite and generating an electronic radiance signal corresponding to the detected radiance;

generating an electronic temperature signal, which corresponds to the temperature of the surface of the film-substrate composite, from the electronic radiance signal, wherein a radiance/temperature relation is used which includes an emissivity function ε

which varies with the wavelength of the radiance and the film thickness and depends on the reflectance R of the film-substrate composite, the emissivity function ε

comprising;

##EQU8## and where;

n₁ is the complex refractive index of the film defined by n₁ =n₁ -ik₁,

n₂ is the complex refractive index of the substrate defined by n₂ =n₂ -ik₂,

d₁ is the film thickness which varies over time t,

k₁ is the extinction coefficient of the film,

k₂ is the extinction coefficient of the substrate,

r₁ is the Fresnel coefficient of a film-vacuum interface,

r₂ is the Fresnel coefficient of the film-substrate interface,

δ

₁ is the phase change across the thickness of the film, and

λ

is the wavelength of the detected radiance; and

controlling the output of the heater apparatus with the electronic temperature signal to cause the temperature of the surface of the film-substrate composite to approach a predetermined value.