Pattern defects inspection system

• US 5,379,348 A
• Filed: 03/31/1993
• Issued: 01/03/1995
• Est. Priority Date: 03/31/1992
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Tojo, Toru, Watanabe, Toshiyuki, Tsuchiya, Hideo, Watanabe, Tomohide
• Primary Examiner(s): Razavi, Michael T.
• Assistant Examiner(s): Fox, David
• Application Number:
  US08/040,852
• Time in Patent Office: 643 Days
• Field of Search: 356/237, 356/394, 382/8, 358/101, 358/106, 348/86, 348/87, 348/125, 348/126
• US Class Current: 382/144
• CPC Class Codes: G01N 21/956 Inspecting patterns on the surface of objects contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G06T 2207/10056 Microscopic image
• CPC Class Codes: G06T 2207/30148 Semiconductor; IC; Wafer
• CPC Class Codes: G06T 7/001 using an image reference approach
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A pattern defects inspection system inspects the presence/absence of pattern defects in a photomask as an object to be inspected in which a chromium pattern and a phase shift pattern are formed together. Measurement data output from a sensor circuit for generating measurement pattern data by inspecting measurement patterns corresponding to two types of patterns formed on the object by radiating light on the object, and two identifiable design data stored in a magnetic disk unit in advance, i.e., chromium pattern design data used to form a chromium pattern and phase shift pattern design data used to form a phase shift pattern, are read out by a bit pattern generator for performing development processing. The two types of bit data obtained by the bit pattern generator are synthesized according to the same coordinate definition. The synthesized design data is compared with the measurement data by a comparator. As a result, the presence/absence of pattern defects in the object can be determined.

Claims

1. A pattern defects inspection system comprising:

conversion means for radiating light on an object to be inspected on which a pattern is formed, said pattern having a light-shielding pattern and a phase shift pattern receiving an optical image of the pattern, and photoelectrically converting the image;

means for generating measurement pattern data corresponding to the pattern on the basis of a signal obtained from said conversion means;

storage means for storing pattern design data used to form the pattern on the object;

bit pattern generating means for developing the pattern design data in said storage means into bit pattern data; and

determining means for determining a presence or absence of defects in the pattern formed on the object by comparing the measurement pattern data with data obtained by performing predetermined filtering processing with respect to the bit pattern data developed by said bit pattern generating means,

wherein said bit pattern generating means further comprising;

graphic pattern interpreting means for recognizing and separating light-shielding pattern design data used to form the light-shielding pattern and phase shift design data used to form the phase shift pattern;

bit pattern development means for developing a corresponding bit pattern of said light-shielding pattern design data and said phase shift design data;

pattern memory means for storing the developed bit pattern data temporarily; and

output means for synthesizing and reading out the bit pattern data to said determining means.

2. The pattern defects inspection system according to claim 1, wherein said phase shift pattern includes a halftone pattern represented by a multi-gradation intermediate signal which cannot be expressed by a binary value based on "0" or "1", said halftone pattern expressed by multi-level data represented by at least two bits, the multi-level data stored in said storage means according to a predetermined conversion rule.

3. The pattern defects inspection system according to claim 2, wherein when said halftone pattern is recognized by said graphic pattern interpreting means, said graphic pattern interpreting means supplies a predetermined multi-level data processing designating signal to said bit pattern development means to for instructing said bit pattern development means to generate multi-level data corresponding to the halftone pattern.

4. The pattern defects inspection system according to claim 1, wherein the light-shielding pattern design data is stored as binary data in said storage means in advance,

the phase shift pattern design data is stored, as multi-level data, in said storage means in advance, and

the system further comprising pattern memory means for storing the phase shift pattern temporarily,

said pattern memory means has a storage capacity large enough to store multi-valued (binary value or more) bit data, the storage capacity being obtained by the following equation:

space="preserve" listing-type="equation">storage capacity=(length of bits/pixel count)×

pattern area bit count

5. The pattern defects inspection system according to claim 1, wherein

said bit pattern generating means are arranged in parallel, each identical to said bit pattern generating means to generate bit pattern data by respectively developing the light-shielding pattern design data and pattern design data, and

the respective bit pattern data are synthesized, and the resultant data is output to said determining means by output means through said pattern memory means.

6. The pattern defects inspection system according to claim 1, wherein said storage means includes a plurality of bit pattern planes forming of temporary memory, the bit pattern stored in said bit pattern planes are synthesized when the bit pattern data are output by said output means.

7. The pattern defects inspection system according to claim 6, wherein said storage means further includes an attribute plane for recognizing phase shift bit pattern data of the bit pattern data on said bit pattern, planes and information represented by the attribute plane is reflected in subsequent operation mode control.

8. The pattern defects inspection system according to claim 7, wherein when predetermined attribute information is set on said attribute plane, said output means synthesizes data associated with the light-shielding pattern and stored in said bit pattern planes with data associated with the phase shift pattern and stored in said bit pattern planes, and

when the predetermined attribute information is not set on said attribute plane, the data associated with the light-shielding pattern and stored in said bit pattern planes is output.

9. A pattern defects detecting inspection system comprising:

conversion means for radiating light on an object on which a pattern is formed, receiving an optical image of the pattern, said pattern having a light shielding pattern and a phase shift pattern and for photoelectrically converting the image;

means for generating measurement pattern data corresponding to the pattern on the basis of a signal obtained by said conversion means;

storage means for storing light-shielding pattern design data used to form the light-shielding pattern on the object and phase shift pattern design data used to form the phase shift pattern on the object according to the same coordinates definition, the two design data being stored to be identifiable;

bit pattern generating means for developing the light-shielding pattern design data and the phase shift pattern design data read out from said storage means into bit pattern data individually;

determining means for determining a presence or absence of defects in the pattern formed on the object by comparing the measurement pattern data with data obtained by performing filtering processing with respect to the bit pattern data developed by said bit pattern generating means; and

selecting/reading means for selecting data representing the defects as the bit pattern data supplied to said determining means from among the light-shielding pattern design data, the phase shift pattern design data and synthetic data wherein the light-shieldingpattern design data and the phase shift pattern design data are synthesized according to the same coordinate definition, in accordance with the measurement pattern data, and for reading out the selected data from said storage means

10. The system according to claim 9, wherein the phase shift pattern design data stored in said storage means includes information associated with a structure of the phase shift pattern formed by one of the schemes selected from the group consisting of a Levenson, auxiliary pattern, chromium-less, and halftone schemes, and includes information associated with identification of the phase shift pattern.

11. The system according to claim 9, wherein said bit pattern generating means uses a value of a bit indicating a light-shielding portion of the light-shielding pattern design data when the bit indicating the lightshielding portion and a bit indicating a phase shift portion of the phase shift pattern design data are located on the same coordinates, uses a value of a bit indicating a phase shift portion of the phase shift pattern design data when a bit indicating a transparent portion of the light-shielding pattern design data and the bit indicating the phase shift portion are located on the same coordinates, and causes contour bit generating means for generating a contour bit indicating a contour portion of the pattern to generate a contour bit of a bit group indicating said phase shift portion of the phase shift pattern design data when the bit group indicating the phase shift portion is present in a region of a bit group indicating said transparent portion of the light-shielding design data, thereby performing predetermined synthesizing processing with the use of the value of the contour bit.

12. A pattern defects inspection system comprising:

conversion means for radiating light on an object to be inspected on which a pattern is formed, said pattern having a light-shielding pattern and a phase shift pattern, for receiving an optical image of the pattern, and for photoelectrically converting the image;

means for generating measurement pattern data corresponding to the pattern on the basis of a signal obtained from said conversion means;

storage means for storing pattern design data used to form the pattern on the object;

bit pattern generating means for developing the pattern design data read out from said storage means into bit pattern data; and

determining means for determining the presence or absence of defects in the pattern formed on the object by comparing the measurement pattern data with data obtained by performing predetermined filtering processing with respect to the bit pattern data developed by said bit pattern generating means,

wherein said storage means stores light-shielding pattern design data used to form the light-shielding pattern on the object and phase shift pattern design data used to form the phase shift pattern on the object according to the same coordinates definition,

said bit pattern generating means is constituted by light-shielding pattern bit development means for developing the light-shielding pattern design data, used to form the light-shielding pattern on the object, into bit data, and phase shift pattern bit development means for developing the phase shift pattern design data, used to form the phase shift pattern on the object, into bit data, and

the bit data, developed by developing the light-shielding pattern design data using said light-shielding pattern bit development means, and the bit data, developed by developing the phase shift pattern design data using said phase shift pattern bit development means, are output to said determining means according to the same coordinates definition.

13. The pattern defects inspection system according to claim 12, wherein the light-shielding pattern design data and the phase shift pattern design data are separately stored in a first storage area and a second storage area as different storage portions of said storage means according to the same multi-level data format.

14. The pattern defects inspection system according to claim 13, wherein said bit pattern generating means is constituted by light-shielding data processing means and phase shift data processing means for independently reading out predetermined data selectively from said first storage area or said second storage area and performing predetermined processing with respect to the read data.

15. The pattern defects inspection system according to claim 14, wherein said pattern design data stored in the storage means including information representing the light-shielding pattern design data or the phase shift pattern design data of the data and indicating a structure of the phase pattern design data, and

said bit pattern generating means performs predetermined development processing on the basis of the information included in the pattern design data in advance.

16. The pattern defects inspection system according to claim 14, wherein said storage means further comprises light-shielding data processing means for, performing predetermined processing with respect to only the light-shielding pattern design data, and supplying the processing result to said comparing means, and

phase shift data processing means for performing predetermined processing with respect to only supplied the phase shift pattern design data, and supplying the processing result to said comparing means.

17. The pattern defects inspection system according to claim 12, wherein the phase shift pattern design data has a data structure which further includes identification information indicating a presence or absence of said phase shift pattern design data and a structure of the phase shift pattern.

18. The pattern defects inspection system according to claim 17, wherein the identification information is displayed on a screen of a display means, and an inspection method and an inspection algorithm can be selectively designated by a key input means on the basis of the identification information.