Method of cleaning reaction tube
First Claim
1. A method of cleaning an inside of a reaction tube, comprising the steps of:
- supplying a cleaning gas containing ClF3 in a concentration of 10 to 50 vol. % into said reaction tube at a flow rate to remove a film deposited on an inner wall surface of said reaction tube or a surface of a member incorporated in said reaction tube by etching using the ClF3 ;
maintaining the temperature in said reaction tube at not less than 450°
C. while said cleaning gas is supplied; and
setting a pressure condition such that the etching rate of the film being removed by the cleaning gas is higher than the etching rate of the material of said reaction tube or a member incorporated in said reaction tube, said film being selected from the group consisting of a polysilicon based film, a silicon nitride based film, and a silicon oxide based film.
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Accused Products
Abstract
Prior to formation of a polysilicon film on a wafer, a pre-coat film having a thickness of 1 μm and consisting of polysilicon is formed on the inner wall surface of a reaction tube or the surface of a member incorporated in the reaction tube. A polysilicon film is formed on the wafer at a temperature of 450° C. to 650° C. A cleaning gas containing ClF3 having a concentration of 10 to 50 vol. % is supplied into the reaction tube at a flow rate to an area of an object be cleaned of 750 to 3,500 SCCM/m2 to remove a polysilicon film deposited on the inner wall surface of the reaction tube or the surface of the member incorporated in the reaction tube by etching using the ClF3. In this case, the cleaning gas is supplied while a temperature in the reaction tube is kept at a temperature of 450° C. to 650° C. and in a pressure condition set at the kept temperature such that an etching rate of a polysilicon film by the cleaning gas is higher than an etching rate of quartz constituting the reaction tube or the member incorporated in the reaction tube.
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Citations
8 Claims
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1. A method of cleaning an inside of a reaction tube, comprising the steps of:
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supplying a cleaning gas containing ClF3 in a concentration of 10 to 50 vol. % into said reaction tube at a flow rate to remove a film deposited on an inner wall surface of said reaction tube or a surface of a member incorporated in said reaction tube by etching using the ClF3 ; maintaining the temperature in said reaction tube at not less than 450°
C. while said cleaning gas is supplied; and
setting a pressure condition such that the etching rate of the film being removed by the cleaning gas is higher than the etching rate of the material of said reaction tube or a member incorporated in said reaction tube, said film being selected from the group consisting of a polysilicon based film, a silicon nitride based film, and a silicon oxide based film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification
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- Resources
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Current AssigneeTokyo Electron Limited
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Original AssigneeTokyo Electron Limited
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InventorsMiyazaki, Shinji, Okumura, Katsuya, Nishimura, Toshiharu, Niino, Reiji, Fujita, Yoshiyuki, Imamura, Yasuo, Mikata, Yuuichi, Lee, Hideki, Moriya, Takahiko
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Primary Examiner(s)Dean, Richard O.
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Assistant Examiner(s)EL ARINI, ZEINAB
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Application NumberUS08/054,229Time in Patent Office620 DaysField of Search134/2, 134/3, 134/22.1, 134/22.11, 134/22.12, 134/22.18, 134/37, 134/42, 156/643, 156/646US Class Current134/22.11CPC Class CodesC23C 16/24 Deposition of silicon onlyC23C 16/405 of refractory metals or ytt...C23C 16/4405 Cleaning of reactor or part...C23C 16/4412 Details relating to the exh...
