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High power field effect transistor

  • US 5,382,821 A
  • Filed: 12/14/1992
  • Issued: 01/17/1995
  • Est. Priority Date: 12/14/1992
  • Status: Expired due to Fees
First Claim
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1. A field effect transistor comprising:

  • an active layer formed in a surface layer of a semiconductor substrate;

    a highly doped impurity source region and a highly doped impurity drain region formed in a surface portion of said semiconductor substrate, said active layer being interposed between said source region and said drain region;

    a gate electrode formed on said semiconductor substrate, said gate electrode havinga source side edge portion which overlaps said highly doped impurity source region, an insulation film being interposed between said source side edge portion and said highly doped impurity source region, anda drain side edge portion which physically contacts said active layer and which does not extend to said highly doped impurity drain region;

    a source electrode formed on said highly doped impurity source region; and

    a drain electrode formed on said highly doped impurity drain region.

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