Monolithic multipole filters made of thin film stacked crystal filters

• US 5,382,930 A
• Filed: 12/21/1992
• Issued: 01/17/1995
• Est. Priority Date: 12/21/1992
• Status: Expired due to Term

• Current Assignee: Northrop Grumman Systems Corporation (Northrop Grumman Corporation)
• Original Assignee: TRW Inc. (Northrop Grumman Corporation)
• Inventors: Stokes, Robert B., Garber, Edward M., Crawford, Jay D., Cushman, Drew
• Primary Examiner(s): LEE, BENNY T
• Application Number:
  US07/993,575
• Time in Patent Office: 757 Days
• Field of Search: 333/187-192, 310/321, 310/324, 310/311
• US Class Current: 333/191
• CPC Class Codes: H03H 3/04 for obtaining desired frequency or temperature coefficient
• CPC Class Codes: H03H 9/585 Stacked Crystal Filters [SCF]
• CPC Class Codes: H03H 9/588 Membranes

Abstract

This invention discloses a monolithic multipole stacked crystal filter comprised of a series of cascaded 2-port semiconductor bulk acoustic resonator stacked crystal filters electrically cascaded and a shunt inductor connected between each of the 2-port filters. Each of the 2-port filters including a first and second piezoelectric layer, typically aluminum nitride. A first input electrode is positioned on a top surface of one of the piezoelectric layers and a second output electrode is positioned on a bottom surface of the other of the piezoelectric layers. A ground electrode is positioned between the piezoelectric layers. In this regard, the piezoelectric layers will resonate at a resonant frequency and provide bandpass filter characteristics. The complete monolithic multipole filter provides control of the passband shape which yields highly desirable filter characteristics.

Claims

1. A multipole stacked crystal filter comprising:

a plurality of cascaded 2-port semiconductor bulk acoustic resonator (SBAR) stacked crystal filters (SCFs) electrically connected on a common semiconductor substrate, each 2-port SBAR SCF including at least two piezoelectric layers and three electrodes, a first one of the electrodes being positioned in contact with a first surface of a first piezoelectric layer, a second one of the electrodes being positioned in contact with a second surface of the first piezoelectric layer and a first surface of a second piezoelectric layer, and a third one of the electrodes being positioned in contact with a second surface of the second piezoelectric layer opposite to the first surface of the second piezoelectric layer, wherein a respective third one of the electrodes of a particular 2-port SBAR SCF is connected to a respective first one of the electrodes of a next 2-port SBAR SCF of the cascade of SBAR SCFs; and

at least one inductor electrically connected in shunt between a respective third one of the electrodes of a corresponding 2-port SBAR SCF and ground.

2. The multipole stacked crystal filter according to claim 1 wherein the plurality of SBAR SCFs includes two or more 2-port SBAR SCFs and wherein said at least one inductor comprises a plurality of inductors respectively electrically connected in shunt to ground between each 2-port SBAR SCF.

3. The multipole stacked crystal filter according to claim 1 wherein at least two of the 2-port SBAR SCFs have different resonant frequencies in order to provide a desired passband shape.

4. The multipole stacked crystal filter according to claim 3 wherein at least one electrode of a first one of the 2-port SBAR SCFs is of a different thickness than one electrode of a second one of the 2-port SBAR SCFs in order to establish the different resonant frequencies.

5. The multipole stacked crystal filter according to claim 1 wherein the at least one inductor provides a desired filter passband shape.

6. The multipole stacked crystal filter according to claim 1 wherein the at least one inductor and respective resonant frequencies of each of the SBAR SCFs are respectively set to provide a desired passband shape.

7. The multipole stacked crystal filter according to claim 1 wherein for each 2-port SBAR SCF the first one of the electrodes is an input electrode, the second one of the electrodes is a ground electrode, and the third one of the electrodes is an output electrode.

8. The multipole stacked crystal filter according to claim 1 wherein each of the piezoelectric layers is comprised of aluminum nitride.

9. The multipole stacked crystal filter according to claim 1 wherein each of the stacked crystal filters is positioned over a respective recess in the semiconductor substrate.

10. A method of filtering a broad band frequency signal comprising the steps of:

providing a series of 2-port semiconductor bulk acoustic resonator (SBAR) stacked crystal filters (SCFs) electrically connected in a cascaded fashion, wherein each SBAR SCF includes at least two piezoelectric layers and three electrodes where a first electrode is in contact with a first surface of a first piezoelectric layer, a second electrode is in contact with a second surface of the first piezoelectric layer and a first surface of a second piezoelectric layer, and a third electrode is in contact with a second surface of the second piezoelectric layer opposite to the first surface of the second piezoelectric layer, wherein the respective third electrode of a particular SBAR SCF is connected to the respective first electrode of a next SBAR SCF of the series of SBAR SCFs;

providing at least one inductor electrically connected to a third electrode of a respective SBAR SCF and ground so as to be respectively in shunt between at least two of the 2-port SBAR SCFs; and

applying the broad band frequency signal to a first SBAR SCF in the series of 2-port SBAR SCFs and outputting a narrow band frequency from a last SBAR SCF in the series of 2-port SBAR SCFs.

11. The method according to claim 10 wherein the step of providing a series of cascaded 2-port SBAR SCFs includes providing two or more 2-port SBAR SCFs and the step of providing at least one inductor includes providing an inductor electrically connected between each of the 2-port SBAR SCFs such that each inductor is electrically connected to a third electrode of one 2-port SBAR SCF and ground.

12. The method according to claim 10 wherein the step of providing a series of cascaded 2-port SBAR SCFs includes providing at least two of the 2-port SBAR SCFs having different frequencies in order provide a desirable shape of the narrow band output frequency.

13. The method according to claim 10 wherein the step of providing an inductor includes selecting the inductor with on inductive value to provide a desired filter passband shape.

14. The method according to claim 10 wherein the steps of providing a series of 2-port SBAR SCFs and providing said at least one inductor include selecting the SBAR SCFs and inductor frequencies to provide a desired passband shape.

15. The method according to claim 10 further comprising the step of providing an electrode of one of the 2-port SBAR SCFs with a different thickness than an electrode of another one of the 2-port SBAR SCFs in order to establish a different resonant frequency.

16. The method according to claim 10 wherein the step of providing the three electrodes includes providing a first input electrode, a second ground electrode, and a third output electrode for each SBAR SCF.

17. A multipole stacked crystal filter comprising:

a plurality of cascaded 2-port semiconductor bulk acoustic resonator (SBAR) stacked crystal filters (SCFs) electrically connected on a common semiconductor substrate, each 2-port SBAR SCF including two piezoelectric layers and three electrodes, an input electrode being positioned in contact with a first surface of a first piezoelectric layer, a ground electrode being positioned in contact with a second surface of the first piezoelectric layer and a first surface of a second piezoelectric layer, and an output electrode being positioned in contact with a second surface of the second piezoelectric layer opposite to the first surface of the second piezoelectric layer, wherein the respective output electrode of one SBAR SCF is connected to the input electrode of a next SBAR; and

at least one inductor connected in shunt between the output electrode of an SBAR SCF and ground for each 2-port SBAR SCF, wherein the 2-port SBAR SCFs and the inductors provide a desired filter passband shape.

18. The multipole stacked crystal filter according to claim 17 wherein one electrode of a first one of the 2-port SBAR SCFs has a different thickness than an electrode of a second one of the 2-port SBAR SCFs in order to establish a different resonant frequency between the first and second 2-port SBAR SCF.