Storage capacitor with a conducting oxide electrode for metal-oxide dielectrics

• US 5,383,088 A
• Filed: 08/09/1993
• Issued: 01/17/1995
• Est. Priority Date: 08/09/1993
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Chapple-Sokol, Jonathan D., Gambino, Jeffrey P., Conti, Richard A.
• Primary Examiner(s): Reynolds, Bruce A.
• Assistant Examiner(s): Mills, Gregory L.
• Application Number:
  US08/103,620
• Time in Patent Office: 526 Days
• Field of Search: 361/305, 361/311, 361/313, 361/321, 361/322, 361/321.1, 361/321.5, 257/68, 257/71, 257/301, 257/303, 257/306, 257/532, 257/295, 257/310, 427/79, 427/99, 427/126.3, 427/255.3, 365/149, 365/145
• US Class Current: 361/305
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H10B 12/033 the capacitor extending over the transistor

Abstract

A capacitor having a high dielectric constant and method of making the same is disclosed. The capacitor comprises a bottom electrode comprising a conductive oxide deposited upon a substrate by chemical vapor deposition. A dielectric layer having a high dielectric constant is deposited upon the conductive oxide. Lastly, a counter electrode is formed upon the dielectric layer.

Claims

1. A method of forming a capacitor, said method comprising the steps of:

a) depositing a conductive oxide upon a substrate by chemical vapor deposition, said conductive oxide consisting of zinc oxide (ZnO), said conductive oxide further comprising a conductive oxide selected from the group consisting of boron (B) doped zinc oxide (ZnO), and fluorine (F) doped zinc oxide (ZnO);

b) depositing a dielectric layer upon said conductive oxide by chemical vapor deposition, said dielectric layer having a high dielectric constant and being selected from the group consisting of tantalum oxide (Ta₂ O₅), strontium titanium oxide (SrTiO₅), and barium titanium oxide (BaTiO₃); and

c) forming a counter electrode upon said dielectric layer.

2. The method of claim 1, wherein the capacitor is a stacked capacitor.

3. A capacitor comprising:

a) a bottom electrode comprising a conductive oxide deposited upon a substrate by chemical vapor deposition, the conductive oxide consisting of zinc oxide (ZnO), said conductive oxide further comprising a conductive oxide selected from the group consisting of boron (B) doped zinc oxide (ZnO) and fluorine (F) doped zinc oxide (ZnO);

b) a dielectric layer deposited upon said conductive oxide by chemical vapor deposition, said dielectric layer having a high dielectric constant and being selected from the group consisting of tantalum oxide (Ta₂ O₅), strontium titanium oxide (SrTiO₃), and barium titanium oxide (BaTiO₃); and

c) a counter electrode formed upon said dielectric layer.

4. The capacitor of claim 3, wherein the capacitor is a stacked capacitor.