Semiconductor memory device having an error correction circuit and an error correction method of data in a semiconductor memory device

• US 5,383,205 A
• Filed: 06/05/1992
• Issued: 01/17/1995
• Est. Priority Date: 06/24/1991
• Status: Expired due to Term

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Kohda, Kenji, Makihara, Hiroyasu
• Primary Examiner(s): Envall, Jr., Roy N.
• Assistant Examiner(s): MOISE, EMMANUEL LIONEL
• Application Number:
  US07/894,661
• Time in Patent Office: 956 Days
• Field of Search: 371/40.1, 371/37.1, 371/37.4, 371/37.6, 371/38.1
• US Class Current: 714/773
• CPC Class Codes: G06F 11/1008 in individual solid state devices G06F11/1004 takes precedence
• CPC Class Codes: G06F 11/1076 Parity data used in redundant arrays of independent storages, e.g. in RAID systems
• CPC Class Codes: H03M 13/151 using error location or error correction polynomials

Abstract

A mask ROM having an ECC for error correction by carrying out operation according to a Hamming matrix in which all but 2 of 6 elements in one column and the other column match each other. The columns correspond to 32 data that will be provided to an external source, and the one column corresponds to the other column by 16 columns. The ECC is implemented so that one half of 32 correction signals with which exclusive ORs are to be taken with 32 data, are generated by a circuit identical to that of a circuit for generating the other half of the 32 correction signals; and the circuit for taking the exclusive ORs from one half of the 32 data and the corresponding correction signals can be used for taking exclusive ORs from the remaining half of the 32 data and the corresponding correction signals. The number of component elements for the correction signal generator and for the data correction circuit, and the number of input signal lines to the data correction circuit are reduced to a half, alleviating the circuit complexity of the entire ECC in comparison with that of a conventional one.

Claims

1. A semiconductor device comprising:

a memory cell array having a plurality of data and a plurality of parity data stored therein,

means for reading out said plurality of data and said plurality of parity data from said memory cell array and

error correction means for correcting an error in said plurality of data by applying operation according to a predetermined Hamming matrix to said plurality of data and said plurality of parity data read out by said reading means,

wherein said plurality of data are equally divided into a first group and a second group,

wherein said error correction means comprises

syndrome signal producing means for producing a plurality of syndrome signals on the basis of said first and second groups of data and said plurality of parity data read out from said memory cell array by said reading means,

group selecting means for sequentially selecting the data of said first group and said second group read out from said memory cell array by said reading means,

correction signal producing means for sequentially producing a correction signal for said first group of data and a correction signal for said second group of data in synchronization with the selecting operation of said group selecting means, in response to said syndrome signals produced by said syndrome signal producing means, and

data correction means for correcting an error in the group of data selected by said group selecting means according to a correction signal produced by said correction signal producing means.

2. The semiconductor memory device according to claim 1, wherein said syndrome signal producing means further produces inverted signals of said plurality of syndrome signals,

wherein said correction signal producing means comprises

signal selecting means for sequentially selecting a signal necessary for said first group of data and a signal necessary for said second group of data, out of said plurality of syndrome signals and said inverted signals, and

correction signal generating means for generating said correction signal in response to the signal selected by said signal selecting means.

3. The semiconductor memory device according to claim 2, wherein said predetermined Hamming matrix comprises a plurality of elements arranged in a plurality of rows corresponding to said plurality of syndrome signals,

wherein said plurality of elements are arranged in a plurality of first columns corresponding to said first group of data, a plurality of second columns corresponding to said second group of data, and a plurality of third columns corresponding to said plurality of parity data,

wherein said plurality of first columns and said plurality of second columns form a plurality of pairs, each having a one-to-one correspondence with each other,

wherein the first column and the second column forming each of said pairs comprise first rows including elements of identical values, and second rows including elements of different values, and

wherein the number of the second rows is equal in all of said plurality of pairs.

4. The semiconductor memory device according to claim 3, wherein each of said elements indicates the syndrome signal corresponding to the row in which it is arranged and an inverted signal thereof as values 0 and 1, respectively, and indicates the data corresponding to the column in which it is arranged and an inverted data thereof as values 1 and 0, respectively.

5. The semiconductor memory device according to claim 4, wherein

said signal selecting means comprises a plurality of first signal switching means provided corresponding to said plurality of pairs,

each of said plurality of first signal switching means selectively provides the syndrome signal or the inverted signal thereof indicated by the element arranged in said second row out of the elements of the first column included in the corresponding pair, and the syndrome signal or the inverted signal thereof indicated by the element arranged in said second row out of the elements in the second column included in the corresponding pair,

said correction signal generating means comprises a plurality of first logic circuit means provided corresponding to said plurality of pairs,

each of said plurality of first logic circuit means produces a logical product signal from the syndrome signal or an inverted signal thereof indicated by the element arranged in said first row out of the elements of the first column included in the corresponding pair, and the output of the corresponding first signal switching means.

6. The semiconductor memory device according to claim 5, wherein said group selecting means comprises a plurality of second signal switching means provided corresponding to said plurality of pairs,

each of said plurality of second signal switching means selectively providing the data corresponding to the first column included in the corresponding pair and the data corresponding to the second column included in the corresponding pair.

7. The semiconductor memory device according to claim 6, wherein said plurality of first signal switching means and said plurality of second signal switching means are controlled at one unit.

8. The semiconductor memory device according to claim 7, wherein said data correction means comprises a plurality of third logic circuit means provided corresponding to said plurality of pairs,

each of said plurality of third logic means producing an exclusive OR signal from an output signal of the corresponding first logic circuit means and an output signal of the corresponding second signal switching means.

9. The semiconductor memory device according to claim 8, wherein each of said second signal switching means comprises third switching means for transmitting to a corresponding third logic circuit means the data corresponding to a corresponding first column, and fourth switching means for transmitting to a corresponding third logic circuit means data corresponding to a corresponding second column,

said third switching means and said fourth switching means being activated alternately.

10. The semiconductor memory device according to claim 9, wherein

said third switching means comprises a third field effect semiconductor device having a first conductive terminal for receiving a corresponding data, a second conductive terminal connected to a corresponding third logic circuit means, and a control terminal for receiving said first control signal, and

said fourth switching means comprises a fourth field effect semiconductor device having a first conductive terminal for receiving a corresponding data, a second conductive terminal connected to a corresponding third logic circuit means, and a control terminal for receiving said second control signal.

11. The semiconductor memory device according to claim 5, wherein each of said plurality of first logic circuit means comprises an NAND gate and an NOR gate.

12. The semiconductor memory device according to claim 4, wherein

said syndrome signal producing means comprises a plurality of second logic circuit means provided corresponding to said plurality of rows,

each of said second logic circuit means produces an exclusive OR signal and an inverted signal thereof of the data and parity data corresponding to elements which are 1 out of the elements of the corresponding row.

13. The semiconductor memory device according to claim 12, wherein each of said plurality of first signal switching means comprises first switching means for transferring to a corresponding first logic circuit means a syndrome signal or an inverted signal indicated by an element arranged in each of said second rows out of the elements of the first column included in the corresponding pair, and second switching means for transferring to a corresponding first logic circuit means a syndrome signal or an inverted signal indicated by an element arranged in each of said second rows out of the elements of the second column included in the corresponding pair.

14. The semiconductor memory device according to claim 13, wherein

said first switching means comprises a first field effect semiconductor device having a first conductive terminal for receiving a corresponding syndrome signal or an inverted signal, a control terminal for receiving a predetermined control signal, and a second conductive terminal connected to a corresponding first logic circuit means, and

said second switching means comprises a second field effect semiconductor device having a first conductive terminal for receiving a corresponding syndrome signal or an inverted signal, a second conductive terminal connected to a corresponding first logic circuit means, and a control terminal for receiving a control signal having a logic level complementary to that of said predetermined control signal.

15. The semiconductor memory device according to claim 12, wherein each of said plurality of second logic circuit means comprises a plurality of EX-OR gates and an inverter.

16. A method of correcting, according to a predetermined Hamming matrix, an error of data in a semiconductor memory device having a memory cell array in which a plurality of data and a plurality of parity data corresponding to said plurality of data are stored therein, wherein said plurality of data is equally divided into a first group and a second group, said method comprising the steps of:

reading out said first and second groups of data and said plurality of parity data from said memory cell array,

producing a plurality of syndrome signals on the basis of said read out first and second groups of data and said plurality of parity data,

sequentially selecting said read out first and second groups of data,

producing sequentially a correction signal for said first group of data and a correction signal for said second group of data in synchronization with said selection in response to said produced syndrome signals, and

correcting an error in said selected group of data in response to said produced correction signal.

17. The method according to claim 16, wherein

said predetermined Hamming matrix comprises a plurality of elements arranged in a plurality of rows corresponding to said plurality of syndrome signals,

wherein said plurality of elements are arranged in a plurality of first columns corresponding to said first group of data, a plurality of second columns corresponding to said second group of data, and a plurality of third columns corresponding to said plurality of parity data,

wherein said plurality of first columns and said plurality of second columns form a plurality of pairs, each having a one-to-one correspondence with each other,

wherein the first column and the second column forming each of said pairs comprise first rows including elements of identical values, and second rows including elements of different values, and

wherein the number of the second rows is equal in all of said plurality of pairs.