Semiconductor laser with light modulator

• US 5,383,216 A
• Filed: 11/12/1993
• Issued: 01/17/1995
• Est. Priority Date: 12/28/1992
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Takemi, Masayoshi
• Primary Examiner(s): Healy, Brian
• Application Number:
  US08/150,883
• Time in Patent Office: 431 Days
• Field of Search: 372/7, 372/11, 372/12, 372/26, 372/28, 372/39, 372/43, 372/44, 372/48, 372/50, 372/109, 372/45
• US Class Current: 372/50.1
• CPC Class Codes: H01S 5/0207 Substrates having a special shape
• CPC Class Codes: H01S 5/0265 Intensity modulators intra-cavity modulators H01S5/0625
• CPC Class Codes: H01S 5/0601 comprising an absorbing region H01S5/0604, H01S5/0607, H01S5/0615 and H01S5/065 take precedence; bistable laser devices in general G02F3/026
• CPC Class Codes: H01S 5/3202 grown on specifically orientated substrates, or using orientation dependent growth
• CPC Class Codes: H01S 5/3428 layer orientation perpendicular to the substrate

Abstract

An integrated semiconductor laser and light modulator includes a semiconductor substrate having a first surface, a semiconductor laser disposed on the first surface of the semiconductor substrate, an electric field absorption type light modulator passing and cutting off the light generated by the semiconductor laser, the semiconductor substrate including a groove opposite the modulator filled with a first semiconductor layer having a lattice constant smaller than that of the semiconductor substrate, having a surface coplanar with the first surface of the semiconductor substrate, and producing misfit dislocations at the growth interface, and a second semiconductor layer epitaxially grown on the first surface of the semiconductor substrate lattice matching with the semiconductor substrate. The electric field absorption type light modulator active layer is the part of the second semiconductor layer grown on the first semiconductor layer into which distortion is introduced by the dislocations, and the semiconductor laser is disposed on a different part of the first semiconductor layer. Therefore, the light generated in the semiconductor laser efficiently propagates into the light modulator.

Claims

1. An integrated semiconductor laser and an electric field absorption type light modulator comprising:

a semiconductor substrate having a first surface, a second surface, a lattice constant, and a groove extending into said semiconductor substrate from the first surface;

a first semiconductor material having a lattice constant smaller than the lattice constant of said semiconductor substrate epitaxially grown in, filling the groove and having a surface coplanar with the first surface of said semiconductor substrate producing misfit dislocations at an interface with said semiconductor substrate;

a second semiconductor layer epitaxially grown and disposed on the first surface of said semiconductor substrate having a lattice match with said semiconductor substrate, a part of said second semiconductor layer being an active layer of an electric field absorption type light modulator.

2. The integrated semiconductor laser and light modulator of claim 1 wherein said semiconductor substrate is InP, said first semiconductor layer is GaInP, and said second semiconductor layer comprises laminated InP, InGaAsP, and InP layers.

3. The integrated semiconductor laser and light modulator of claim 2 wherein the Ga composition ration of said GaInP layer is at least 0.047.

4. The integrated semiconductor laser and light modulator of claim 3 wherein the Ga composition ratio of said GaInP layer is within a range from 0.047 to 0.05.

5. An integrated laser and light modulator comprising:

a semiconductor substrate having a first surface, a second surface, a lattice constant;

a first semiconductor layer epitaxially grown on said semiconductor substrate lattice matching with said semiconductor substrate and having a groove extending into part of said first semiconductor layer;

a second semiconductor layer having a lattice constant smaller than the lattice constant of said semiconductor substrate, epitaxially grown in and filling the groove and having a surface coplanar with the front surface of said first semiconductor layer so that misfit dislocations are produced at an interface of said second semiconductor layer and said semiconductor substrate;

a third semiconductor layer epitaxially grown and disposed on said first semiconductor layer lattice matching with said semiconductor substrate, a portion of said third semiconductor layer being an operating layer of an electric field absorption type light modulator.

6. The integrated semiconductor laser and light modulator of claim 5 wherein said semiconductor substrate is InP, said first semiconductor layer is InP, said second semiconductor layer is GaInP, and said third semiconductor layer comprises laminated InP, InGaAsP, and InP layers.

7. The integrated semiconductor laser light modulator of claim 6 wherein the Ga composition ratio of said GaInP layer is at least 0.047.

8. The integrated semiconductor laser and light modulator of claim 7 wherein the Ga composition ratio of said GaInP layer is within a range from 0.047 to 0.064.