Integrated circuit device having signal wiring structure of ultrahigh-speed performance
First Claim
1. An integrated circuit device, comprising:
- a substrate;
a plurality of circuit elements arranged on said substrate and having terminals;
a plurality of signal lines connected between said terminals of said circuit elements; and
a ground line provided close to said signal lines for controlling transmission characteristics of said signal lines, said ground line including a high-potential direct current power source line and a low-potential direct current power source line, said high-potential direct current power source line and said low-potential direct current power source line being vertically stacked and separated by a dielectric layer therebetween, said high-potential and low potential direct current power source lines and at least one of said signal lines extending in a parallel direction with each other, wherein the thickness of the dielectric layer is sufficiently thin compared with a width of said high-potential and low-potential direct current power source lines so that the impedance of said high-potential and low potential direct current power source lines is sufficiently less than the impedance between the signal lines so that said high-potential and low-potential direct current power source lines have substantially the same potential in terms of a high frequency and thereby function as a single ground line for the signal line.
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Accused Products
Abstract
An integrated circuit device has a substrate, a plurality of circuit elements or units arranged on the substrate and having terminals, a plurality of signal lines connected between the terminals of the circuit elements or units, or between the terminals and external connection terminals, and an alternating current ground line provided close to the signal lines to determine a transmission characteristic of the signal lines, the alternating current ground line including a high-potential direct current power source line and a low-potential direct current power source line, the high-potential direct current power source line and the low-potential direct current power source line being vertically separated by a dielectric layer.
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Citations
7 Claims
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1. An integrated circuit device, comprising:
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a substrate; a plurality of circuit elements arranged on said substrate and having terminals; a plurality of signal lines connected between said terminals of said circuit elements; and a ground line provided close to said signal lines for controlling transmission characteristics of said signal lines, said ground line including a high-potential direct current power source line and a low-potential direct current power source line, said high-potential direct current power source line and said low-potential direct current power source line being vertically stacked and separated by a dielectric layer therebetween, said high-potential and low potential direct current power source lines and at least one of said signal lines extending in a parallel direction with each other, wherein the thickness of the dielectric layer is sufficiently thin compared with a width of said high-potential and low-potential direct current power source lines so that the impedance of said high-potential and low potential direct current power source lines is sufficiently less than the impedance between the signal lines so that said high-potential and low-potential direct current power source lines have substantially the same potential in terms of a high frequency and thereby function as a single ground line for the signal line. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An integrated circuit device, comprising:
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a substrate; a plurality of circuit elements arranged on said substrate and having terminals; a plurality of signal lines connected between said terminals and external connection terminals; and a ground line provided close to said signal lines for controlling transmission characteristics of said signal lines, said ground line including a high-potential direct current power source line and a low-potential direct current power source line, said high-potential direct current power source line and said low-potential direct current power source line being vertically stacked and separated by a dielectric layer therebetween, said high-potential and low potential direct current power source lines and at least one of said signal lines extending in a parallel direction with each other, wherein the thickness of the dielectric layer is sufficiently thin compared with a width of said high-potential and low-potential direct current power source lines so that the impedance of said high-potential and low potential direct current power source lines is sufficiently less than the impedance between the signal lines so that said high-potential and low-potential direct current power source lines have substantially the same potential in terms of a high frequency and thereby function as a single ground line for the signal line.
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Specification