Method for manufacturing integrated semiconductor devices
First Claim
1. The method of forming an integrated semiconductor device, comprising the steps of:
- bonding conductors of a first semiconductor device having a substrate to conductors on a second semiconductor device having a substrate;
flowing an etch-resist to fill a space between the first semiconductor device and the second semiconductor device;
allowing the etch-resist to dry; and
removing the substrate from the second semiconductor device.
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Accused Products
Abstract
An integrated semiconductor device is formed by bonding the conductors of one fabricated semiconductor device having a substrate to the conductors on another fabricated semiconductor device having a substrate, flowing an etch-resist in the form of a photoresist between the devices, allowing the etch-resist to dry, and removing the substrate from one of the semiconductor devices. Preferably the etch-resist is retained to impart mechanical strength to the device. More specifically, a hybrid semiconductor device is formed by bonding the conductors of one or more GaAs/AlGaAs multiple quantum well modulators to conductors on an IC chip, flowing a photoresist between the modulators and the chip, allowing the photoresist to dry, and removing the substrate from the modulator.
135 Citations
21 Claims
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1. The method of forming an integrated semiconductor device, comprising the steps of:
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bonding conductors of a first semiconductor device having a substrate to conductors on a second semiconductor device having a substrate; flowing an etch-resist to fill a space between the first semiconductor device and the second semiconductor device; allowing the etch-resist to dry; and removing the substrate from the second semiconductor device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification