Method of fabricating semiconductor thin film and a Hall-effect device
First Claim
1. A method of fabricating a semiconductor thin film, comprising the steps of:
- preparing a substrate having a surface consisting of a single crystal of Si;
removing an oxide film from the surface of the substrate and terminating dangling bonds of Si atoms on the surface with hydrogen atoms;
forming an initial layer of at least one selected from the group consisting of Al, Ga, and In on the substrate terminated with the hydrogen atoms;
forming a buffer layer containing at least In and Sb on the initial layer; and
forming a semiconductor thin film containing at least In and Sb on said buffer layer at a temperature higher than a temperature at which said buffer layer is started to be formed.
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Abstract
A method of fabricating a semiconductor thin film is initiated with preparing a substrate having a surface consisting of a single crystal of Si. The surface has an oxide film. Then, the oxide film is removed. The dangling bonds of the Si atoms on the surface are terminated with hydrogen atoms. An initial layer is formed on the substrate of the single crystal of Si terminated with the hydrogen atoms, of at least one selected from the group consisting of Al, Ga, and In. A buffer layer containing at least In and Sb is formed on the initial layer. A semiconductor thin film containing at least In and Sb is formed on the buffer layer at a temperature higher than the temperature at which the buffer layer is started to be formed. There is also disclosed a method of fabricating a Hall-effect device. This method is initiated with forming a semiconductor thin film by making use of the above-described fabrication method. Then, electrodes are attached to the thin film.
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Citations
14 Claims
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1. A method of fabricating a semiconductor thin film, comprising the steps of:
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preparing a substrate having a surface consisting of a single crystal of Si; removing an oxide film from the surface of the substrate and terminating dangling bonds of Si atoms on the surface with hydrogen atoms; forming an initial layer of at least one selected from the group consisting of Al, Ga, and In on the substrate terminated with the hydrogen atoms; forming a buffer layer containing at least In and Sb on the initial layer; and forming a semiconductor thin film containing at least In and Sb on said buffer layer at a temperature higher than a temperature at which said buffer layer is started to be formed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification