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Multimedia storage system with highly compact memory device

  • US 5,386,132 A
  • Filed: 11/02/1992
  • Issued: 01/31/1995
  • Est. Priority Date: 11/02/1992
  • Status: Expired due to Term
First Claim
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1. A vertical memory cell formed in a trench in a substrate, said vertical memory cell comprising:

  • a buried source region;

    a drain region;

    a channel region formed between said buried source region and said drain region;

    a floating gate positioned in operative relation to said buried source region, said drain region and said channel region; and

    a control gate insulated from said floating gate,wherein said floating gate includes a first segment positioned vertically in said trench and a second segment positioned horizontally, said first segment being spaced from said drain region by a first distance and said second segment being spaced from said drain region by a second distance less than said first distance.

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