Memory cell for associative memory
First Claim
1. Memory cell for a static associative memory comprising two arrays of transistors, a first array having a data storage function and a second array having a comparison function between a stored data item and a data item applied to the cell by bit lines, the comparison result being obtained on a selection line S, characterized in that the second array (T1,T2,T3,T4) of transistors comprises some of the transistors of the first array (T3,T4,T7,T8,T5,T6) connected to be operated by the stored data item to compare the date item applied with the stored data item.
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Abstract
The invention relates to a memory cell for a static associative memory comprising two arrays of transistors, a first array having a data storage function and a second array having a comparison function between the stored data item and a data item applied to the input of the cell, the comparison result being obtained on a selection line S, in which the second array (T1,T2,T3,T4) of transistors is partly formed by the transistors of the first array (T3,T4,T7,T8,T5,T6). The structure of the cell thus has reduced overall dimensions compared with known structures.
392 Citations
5 Claims
- 1. Memory cell for a static associative memory comprising two arrays of transistors, a first array having a data storage function and a second array having a comparison function between a stored data item and a data item applied to the cell by bit lines, the comparison result being obtained on a selection line S, characterized in that the second array (T1,T2,T3,T4) of transistors comprises some of the transistors of the first array (T3,T4,T7,T8,T5,T6) connected to be operated by the stored data item to compare the date item applied with the stored data item.
Specification