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Method of making silicon-on-porous-silicon by ion implantation

  • US 5,387,541 A
  • Filed: 05/11/1993
  • Issued: 02/07/1995
  • Est. Priority Date: 11/20/1990
  • Status: Expired due to Term
First Claim
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1. A method of producing substantially single crystal silicon-on-porous-silicon comprising the steps of:

  • (i) manufacturing a porous silicon region on a silicon wafer, such that the silicon wafer has a porous silicon surface and a non-porous silicon surface;

    (ii) applying an implanted ion dose to at least a portion of the porous silicon surface to form a layer of amorphous silicon on a remaining region of porous silicon; and

    (iii) recrystallizing the amorphous silicon by annealing at a temperature greater than 350°

    C. to form a substantially single crystal layer of silicon on the remaining region of porous silicon.

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