Method of making silicon-on-porous-silicon by ion implantation
First Claim
1. A method of producing substantially single crystal silicon-on-porous-silicon comprising the steps of:
- (i) manufacturing a porous silicon region on a silicon wafer, such that the silicon wafer has a porous silicon surface and a non-porous silicon surface;
(ii) applying an implanted ion dose to at least a portion of the porous silicon surface to form a layer of amorphous silicon on a remaining region of porous silicon; and
(iii) recrystallizing the amorphous silicon by annealing at a temperature greater than 350°
C. to form a substantially single crystal layer of silicon on the remaining region of porous silicon.
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Abstract
The invention provides a method of producing silicon-on-porous-silicon material comprising the steps of (i) manufacturing a porous silicon layer on a suitable silicon wafer, such that the silicon wafer has a porous silicon surface and a non-porous silicon surface, (ii) applying an implanted ion dose to at least a portion of the porous silicon surface such that the dose is sufficient to cause amorphization of porous silicon. The material produced by the method of the invention can then be used for production of silicon-on-insulator material by oxidation of remaining porous silicon and recrystallization of amorphised silicon. Typically such material can be used for manufacture of e.g. SOI C-MOS devices and bipolar transistors. Alternatively, the method of the invention can be used for the manufacture of e.g. pyroelectric devices.
65 Citations
21 Claims
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1. A method of producing substantially single crystal silicon-on-porous-silicon comprising the steps of:
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(i) manufacturing a porous silicon region on a silicon wafer, such that the silicon wafer has a porous silicon surface and a non-porous silicon surface; (ii) applying an implanted ion dose to at least a portion of the porous silicon surface to form a layer of amorphous silicon on a remaining region of porous silicon; and (iii) recrystallizing the amorphous silicon by annealing at a temperature greater than 350°
C. to form a substantially single crystal layer of silicon on the remaining region of porous silicon. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of producing substantially single crystal silicon-on-porous-silicon comprising the steps off
(i) manufacturing a porous silicon region on a silicon wafer, such that the silicon wafer has a porous silicon surface and a non-porous silicon surface; -
(ii) applying an implantation dose of greater than 1×
1014 ions/cm2 in two successive ion implantations, with a first ion implantation by F+ ions followed by a second ion implantation by a species of ion selected from the group consisting of Ge+, Si+ and Sn+, to at least a portion of the porous silicon surface to form a layer of amorphous silicon on a remaining region of porous silicon; and(iii) recrystallizing the amorphous silicon by annealing at a temperature greater than 350°
C. to form a substantially single crystal layer of silicon on the remaining region of porous silicon.
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17. A method of producing substantially single crystal silicon-on-porous-silicon comprising the steps of:
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(i) manufacturing a porous silicon region on a silicon wafer, such that the silicon wafer has a porous silicon surface and a non-porous silicon surface; (ii) applying an implantation ion dose of greater than 1×
1014 ions/cm2 in two successive ion implantations, with a first ion implantation by a species of ion selected from the group consisting of Ge+, Si+ and Sn+ followed by a second ion implantation by F+ ions, to at least a portion of the porous silicon surface to form a layer of amorphous silicon on a remaining region of porous silicon; and(iii) recrystallizing the amorphous silicon by annealing at a temperature greater than 350°
C. to form a substantially single crystal layer of silicon on the remaining region of porous silicon.
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18. A method of producing silicon-on-porous-silicon comprising the steps of:
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(i) manufacturing a porous silicon region on a silicon wafer such that the silicon wafer has a porous silicon surface and a non-porous silicon surface; and (ii) applying an implantation ion dose to at least a portion of the porous silicon surface to form a layer of amorphous silicon on a remaining region of porous silicon.
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- 20. A method according to claim 20 wherein the ion implantation is carried out in two successive ion implantations with a first ion implantation by F+ ions and a second ion implantation by a single species of ion selected from the group consisting of Ge+, Si+ and Sn+.
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