Light emitting diode

• US 5,387,804 A
• Filed: 09/14/1992
• Issued: 02/07/1995
• Est. Priority Date: 12/28/1988
• Status: Expired due to Fees

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Shigeta, Mitsuhiro, Suzuki, Akira, Fujii, Yoshihisa, Furukawa, Katsuki
• Primary Examiner(s): James, Andrew J.
• Assistant Examiner(s): Meier, Stephen D.
• Application Number:
  US07/944,794
• Time in Patent Office: 876 Days
• Field of Search: 357/17, 357/61, 257/77, 257/461
• US Class Current: 257/77
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/34 containing only elements of Group IV of the Periodic Table

Abstract

A light emitting diode is disclosed which comprises at least one heterojunction composed of silicon carbide (SIC) and semiconductor materials selected from the group consisting of gallium nitride (GAN), aluminum nitride (AlN), and aluminum gallium nitride (Ga_x Al_1-x N, 0<x<1).

Claims

1. A light emitting diode comprising at least one heterojunction including a p-type silicon carbide (SIC) and an n-type semiconductor material selected from the group consisting of gallium nitride (GAN), aluminum nitride (AlN), and aluminum gallium nitride (Ga_x Al_1-x N, 0<

x<

1), a density of positive holes in said p-type silicon carbide being in the order of 10¹⁸ to 10¹⁹ cm^-3 ; and

a density of electrons in said n-type semiconductor material being in the order of 10¹⁶ to 10¹⁷ cm^-3.

2. A light emitting diode according to claim 1, wherein said n-type semiconductor material is formed by chemical vapor deposition.

3. A light emitting diode comprising at least one heterojunction including:

a substrate made of a p-type silicon carbide (SiC);

a first n-type semiconductor layer made of silicon carbide, formed on said substrate; and

a second n-type semiconductor layer made of a semiconductor material selected from the group consisting of gallium nitride (GAN), aluminum nitride (AlN), and aluminum gallium nitride (Ga_x Al_1-x N, O<

x<

1), formed on said first n-type semiconductor layer, a density of positive holes in said substrate being in the order of 10¹⁸ to 10¹⁹ cm^-3, a density of electrons in said first n-type semiconductor layer being in the order of 10¹⁶ to 10 17 cm^-3, a density of electrons in said second n-type semiconductor layer being in the order 10¹⁷ cm^-3.