VCSEL with unstable resonator

• US 5,388,120 A
• Filed: 09/21/1993
• Issued: 02/07/1995
• Est. Priority Date: 09/21/1993
• Status: Expired due to Term

• Current Assignee: II-VI Delaware, Inc. (Coherent Corp.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Shieh, Chan-Long, Ackley, Donald E., Lebby, Michael S.
• Primary Examiner(s): Davie, James W.
• Application Number:
  US08/124,065
• Time in Patent Office: 504 Days
• Field of Search: 372/92, 372/95, 372/99, 372/44, 372/45, 372/46
• US Class Current: 372/99
• CPC Class Codes: H01S 2301/166 Single transverse or lateral mode
• CPC Class Codes: H01S 5/1089 Unstable resonators
• CPC Class Codes: H01S 5/18305 with emission through the substrate, i.e. bottom emission
• CPC Class Codes: H01S 5/18388 Lenses
• CPC Class Codes: H01S 5/18391 Aperiodic structuring to influence the near- or far-field distribution

Abstract

A vertical cavity laser with unstable resonator including a substrate having opposed major surfaces with a first semiconductor mirror stack positioned on one major surface of the substrate, an active region positioned on the first stack and a second semiconductor mirror stack positioned on the active region so as to sandwich the active region between the first and second stacks. Layers of the second stack being etched so as to spatially modulate the thickness of the second stack such that reflectivity is reduced in a central portion of the second stack and increases toward an edge thereof.

Claims

1. An unstable resonator for a vertical cavity laser including a first semiconductor mirror stack, a plurality of semiconductor layers forming an active region positioned on the first semiconductor mirror stack, a second semiconductor mirror stack positioned on the active region so as to sandwich the active region between the first and second semiconductor mirror stacks, and the second semiconductor mirror stack being formed with more semiconductor layers adjacent an edge of the second semiconductor stack than in a central portion thereof so as to spatially modulate the reflectivity of the second semiconductor mirror stack such that reflectivity is reduced in the central portion of the second semiconductor mirror stack and increases toward the edge.

2. An unstable resonator for a vertical cavity laser as claimed in claim 1 including in addition an electrical contact positioned on the second semiconductor mirror stack in overlying relationship to the central portion thereof.

3. An unstable resonator for a vertical cavity laser as claimed in claim 1 wherein the semiconductor layers in the second semiconductor mirror stack increase from the central portion to the edge in a plurality of steps.

4. An unstable resonator for a vertical cavity laser comprising:

a substrate having first and second opposed major surfaces;

a first semiconductor mirror stack positioned on the first major surface of the substrate;

a plurality of semiconductor layers forming an active region, the active region being positioned on the first semiconductor mirror stack;

a second semiconductor mirror stack positioned on the active region so as to sandwich the active region between the first and second semiconductor mirror stacks; and

the second semiconductor mirror stack being formed with a larger number of semiconductor layers adjacent edges of the second semiconductor mirror stack than in a central portion thereof.

5. An unstable resonator for a vertical cavity laser as claimed in claim 4 wherein the number of semiconductor layers in the second semiconductor mirror stack increases from the central portion to the edge in a plurality of steps.

6. An unstable resonator for a vertical cavity laser as claimed in claim 5 wherein each of the plurality of steps is approximately equal to one-half of a wavelength at the lasing frequency.

7. An unstable resonator for a vertical cavity laser as claimed in claim 5 wherein each of the plurality of steps is approximately equal to one-quarter of a wavelength at the lasing frequency.

8. An unstable resonator for a vertical cavity laser as claimed in claim 5 wherein each of the plurality of steps is selected so that they cooperate to provide the effect of a binary mirror to focus emitted radiation in a predetermined pattern.

9. An unstable resonator for a vertical cavity laser as claimed in claim 4 including in addition an electrical contact positioned on the second semiconductor mirror stack and light is emitted through the second major surface of the substrate.

10. An unstable resonator for a vertical cavity laser as claimed in claim 9 wherein the electrical contact is positioned to overlie the central portion of the second semiconductor mirror stack.

11. An unstable resonator for a vertical cavity laser as claimed in claim 9 including in addition a second electrical contact positioned on the second major surface of the substrate.

12. An unstable resonator for a vertical cavity laser as claimed in claim 4 wherein the plurality of semiconductor layers forming an active region include a central region having at least one quantum well formed therein and a cladding layer formed on opposite sides thereof.