Semiconductor device
First Claim
Patent Images
1. A semiconductor device, comprising a first semiconductor layer of a first conductivity type, said first semiconductor layer containing carbon as a constituent element;
- and a second semiconductor layer of a second conductivity type, said second semiconductor layer being formed on the first semiconductor layer and containing carbon as a constituent element;
wherein Cr is doped in at least one of the first and second semiconductor layers.
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Accused Products
Abstract
Disclosed is a semiconductor device such as a light emitting diode, a MOS transistor, a Schottky diode, and CCD. The semiconductor device comprises a SiC layer of a first conductivity type and another SiC layer of a second conductivity type. At least one of the SiC layers of the first and second conductivity types is doped with at least one element selected from the group consisting of Cr, Mo and W.
68 Citations
15 Claims
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1. A semiconductor device, comprising a first semiconductor layer of a first conductivity type, said first semiconductor layer containing carbon as a constituent element;
- and a second semiconductor layer of a second conductivity type, said second semiconductor layer being formed on the first semiconductor layer and containing carbon as a constituent element;
wherein Cr is doped in at least one of the first and second semiconductor layers. - View Dependent Claims (2, 3, 4, 5, 6, 7)
- and a second semiconductor layer of a second conductivity type, said second semiconductor layer being formed on the first semiconductor layer and containing carbon as a constituent element;
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8. A semiconductor device, comprising a semiconductor layer formed of SiC and doped with Cr;
- and a metal layer formed on the surface of said semiconductor layer, said metal layer being in ohmic contact with said semiconductor layer, or said metal layer and said semiconductor layer forming a Schottky barrier therebetween.
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9. A semiconductor device comprising a semiconductor layer formed of SiC and doped with at least one metal element selected from the group consisting of Cr, Mo and W in an amount of about 1×
- 1015 atoms/cm3 to about 5×
1019 atoms/cm3 ; and
a metal layer formed on the surface of said semiconductor layer, said metal layer being in ohmic contact with said semiconductor layer, or said metal layer and said semiconductor layer forming a Schottky barrier therebetween. - View Dependent Claims (13)
- 1015 atoms/cm3 to about 5×
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10. A semiconductor device comprising a semiconductor layer formed of SiC and doped with at least one metal element selected from the group consisting of Cr, Mo and W and wherein said semiconductor layer is doped with at least one element selected from the group consisting of the group III elements and the group V elements together with said metal element;
- and a metal layer formed on the surface of said semiconductor layer, said metal layer being in ohmic contact with said semiconductor layer, or said metal layer and said semiconductor layer forming a Schottky barrier therebetween.
- View Dependent Claims (11)
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12. A semiconductor device comprising a semiconductor layer formed of SiC and doped with at least one metal element selected from the group consisting of Cr, Mo and W;
- and a metal layer formed on the surface of said semiconductor layer wherein said metal layer is formed of a metal selected from the group consisting of Ni, Pt, Cr, Al and Ti, said metal layer being in ohmic contact with said semiconductor layer, or said metal layer and said semiconductor layer forming a Schottky barrier therebetween.
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14. A semiconductor device, comprising a first semiconductor layer of a first conductivity type, said first semiconductor layer containing carbon as a constituent element;
- and a second semiconductor layer of a second conductivity type, said second semiconductor layer being formed on the first semiconductor layer and containing carbon as a constituent element;
wherein at least one of the first and second semiconductor layers is doped with at least one element selected from Cr, Mo and W, and at least one element selected from the group consisting of the group II and the group VI.
- and a second semiconductor layer of a second conductivity type, said second semiconductor layer being formed on the first semiconductor layer and containing carbon as a constituent element;
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15. A semiconductor device comprising a semiconductor layer formed of SiC and doped with at least one metal element selected from the group consisting of Cr, Mo and W wherein said semiconductor layer is doped with at least one element selected from the group II elements and the group VI elements;
- and a metal layer formed on the surface of said semiconductor layer, said metal layer being in ohmic contact with said semiconductor layer, or said metal layer and said semiconductor layer forming a Schottky barrier therebetween.
Specification