Multilayer magnetoresistance effect-type magnetic head

• US 5,390,061 A
• Filed: 06/05/1991
• Issued: 02/14/1995
• Est. Priority Date: 06/08/1990
• Status: Expired due to Term

• Current Assignee: Hitachi Global Storage Technologies Japan Limited (Hitachi, Ltd.)
• Original Assignee: Hitachi, Ltd.
• Inventors: Kobayashi, Toshio, Takano, Hisashi, Koyama, Naoki, Nakao, Takeshi, Akagi, Kyo, Tanabe, Hideo, Shimizu, Noboru, Suzuki, Mikio, Yuito, Isamu, Moriwaki, Eijin, Futamoto, Masaaki, Shiiki, Kazuo, Matsuda, Yoshibumi, Kitada, Masahiro, Takagaki, Tokuho, Nakatani, Ryoichi, Fukuoka, Hirotsugu, Munemoto, Takayuki, Kugiya, Fumio, Miyamura, Yoshinori
• Primary Examiner(s): Wolff, John H.
• Assistant Examiner(s): Renner, Craig A.
• Application Number:
  US07/710,775
• Time in Patent Office: 1,350 Days
• Field of Search: 360/113
• US Class Current: 360/324.2
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11B 2005/0002 Special dispositions or recording techniques
• CPC Class Codes: G11B 2005/0016 of magnetoresistive transducers
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: G11B 5/3909 Arrangements using a magnetic tunnel junction
• CPC Class Codes: G11B 5/3929 Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
• CPC Class Codes: G11B 5/3967 Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read G11B5/3906 takes precedence
• CPC Class Codes: G11B 5/398 Specially shaped layers
• CPC Class Codes: H01F 10/324 Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
• CPC Class Codes: H01F 10/3254 the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• CPC Class Codes: H01F 10/3268 the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: Y10T 29/49032 Fabricating head structure or component thereof
• CPC Class Codes: Y10T 29/49043 Depositing magnetic layer or coating
• CPC Class Codes: Y10T 29/49044 Plural magnetic deposition layers
• CPC Class Codes: Y10T 29/49155 Manufacturing circuit on or in base

Abstract

The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magneto-resistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

Claims

1. A multilayered magnetoresistance effect element, comprising:

first and second magnetic layers;

an intermediate layer, including at least one of a group consisting of an insulating material, a semiconductor and an antiferromagnetic material, between said first and second magnetic layers to form a magnetoresistance effect multilayered structure; and

a first and a second electrode respectively disposed on the first and second magnetic layers of the magnetoresistance effect multilayered structure, for detecting a variation of an external magnetic field by sensing change of a voltage between the first and second electrodes via the magnetoresistance effect multilayered structure to detect an electrical resistance variation in the multilayered structure caused by electron spin-dependent scattering at layer-layer interfaces in the multilayered structure due to the external magnetic field variation, the first and second electrodes and the multilayered structure being arranged so that all current flows across the first magnetic layer-intermediate layer and second magnetic layer-intermediate layer interfaces, and in said intermediate layer.

2. A magnetoresistance effect element according to claim 1, wherein said first and second electrodes each comprise a nonmagnetic metal.

3. A magnetoresistance effect element according to claim 1, wherein said magnetoresistance effect multilayered structure provides a ferromagnetic spin-dependent tunneling effect.

4. A magnetoresistance effect element according to claim 3, wherein the respective compositions of the first magnetic layer, intermediate layer, and second magnetic layer of said magnetoresistance effect multilayered structure comprise one of the following combinations:

Ni layer/NiO layer/Co layer, Fe layer/Ge layer/Co layer, Al layer/Al₂ O₃ layer/Ni layer, Co--Al layer/Al₂ O₃ layer/Ni layer, Fe--C layer/SiO₂ layer/Fe--Ru layer, Fe--C layer/Al₂ O₃ layer/Co--Ni layer, and Fe--C layer/Al₂ O₃ layer/Fe--Ru layer.

5. A magnetoresistance effect element according to claim 1, wherein said intermediate layer comprises an antiferromagnetic material including an Fe layer and a Cr layer.

6. A magnetoresistance effect element according to claim 1, wherein said intermediate layer includes an antiferromagnetic material that applies an exchange bias field to at least one of said magnetic layers.

7. A magnetoresistance effect element according to claim 1, wherein said intermediate layer is comprised of at least one of a group consisting of a carbide, a boride, a nitride, a phosphide, and a compound of group IIIb to Vb elements.

8. A magnetoresistance effect element according to claim 1, wherein said magnetoresistance effect element comprises a plurality of magnetoresistance effect multilayered structures electrically connected together between the first and second electrodes.

9. A magnetoresistance effect element according to claim 1, further comprising a substrate on which said magnetoresistance effect multilayered structure is located so that electrons flow in zigzag fashion in said intermediate layer when the current flows.

20. A magnetoresistance effect element according to claim 1, wherein the first and second magnetic layers have respectively different coercive forces.

21. A magnetoresistance effect element according to claim 1, wherein easy axis directions of the first and second magnetic layers are perpendicular to each other.

22. A magnetoresistance effect element according to claim 1, wherein one of the first and second magnetic layers has an angular magnetic anisotropy dispersion of no greater than 10°

.

23. A magnetoresistance effect element according to claim 1, wherein one of the first and second magnetic layers has a single magnetic domain.

24. A magnetoresistance effect element according to claim 1, further comprising a pair of high-permeability magnetic layers at opposite ends of the multilayered structure.

25. A magnetoresistance effect element according to claim 1, further comprising an antiferromagnetic layer on one of said first and second magnetic layers so that said one of said first and second magnetic layers is between the antiferromagnetic layer and the intermediate layer.

26. A magnetoresistance effect element according to claim 1, wherein the first and second magnetic layers have similar coercive forces.

10. A magnetic head formed of a multilayered magnetoresistance effect element for reading information from a magnetic recording medium, said magnetoresistance effect element comprising:

first and second magnetic layers;

an intermediate layer, including at least one of a group consisting of an insulating material, a semiconductor and an antiferromagnetic material, between said magnetic layers to form a magnetoresistance effect multilayered structure; and

a first and a second electrode respectively disposed on the first and second magnetic layers of the magnetoresistance effect multilayered structure, for detecting a variation of an external magnetic field due to a change in magnetic flux leaking from said magnetic recording medium by sensing change of a voltage between the first and second electrodes via the magnetoresistance effect multilayered structure to detect an electrical resistance variation in the multilayered structure caused by a ferromagnetic spin-dependent scattering tunneling effect at layer-layer interfaces in the multilayered structure due to the external magnetic field variation, the first and second electrodes and the multilayered structure being arranged so that all current flows across the first magnetic layer-intermediate layer and second magnetic layer-intermediate layer interfaces, and in said intermediate layer.

11. A magnetic head according to claim 10, wherein the first and second magnetic layers have respectively different coercive forces, and said intermediate layer includes an insulating material.

12. A magnetic head according to claim 11, wherein said first and second magnetic layers are comprised of soft and hard magnetic materials.

13. A magnetic head according to claim 11, wherein easy axis directions of said first and second magnetic layers are perpendicular to each other.

14. A magnetic head according to claim 11, wherein the first and second magnetic layers have respective work functions that differ from each other by at least 0.3 eV.

15. A magnetic head according to claim 10, wherein said intermediate layer is between 0.5 to 1.0 nm thick.

16. A magnetic head according to claim 11, further comprising a shielding material for shielding the outer sides of said first and second magnetic layers.

17. A magnetic head according to claim 10, further comprising a magnetic pole for recording.

18. A magnetic head according to claim 10, wherein said magnetic head is formed on an induction-type thin-film head.

27. A magnetic head according to claim 10, wherein the first and second magnetic layers have similar coercive forces.

19. A magnetic storage apparatus including a multilayered magnetoresistance effect element, said magnetoresistance effect element having first and second magnetic layers and an intermediate layer, including one of a group consisting of an insulating material, a semiconductor and an antiferromagnetic material, between said magnetic layers to form a magnetoresistance effect multilayered structure, and a first and a second electrode respectively disposed on the first and second magnetic layers of the magnetoresistance effect multilayered structure, for detecting a variation of an external magnetic field by sensing change of a voltage between the first and second electrodes via the magnetoresistance effect multilayered structure to detect an electrical resistance variation in the multilayered structure caused by electron spin-dependent scattering at layer-layer interfaces in the multilayered structure due to the external magnetic field variation, the first and second electrodes and the multilayered structure being arranged so that all current flows across the first magnetic layer-intermediate layer and second magnetic layer-intermediate layer interfaces, and in said intermediate layer.