Monolithic multi-color light emission/detection device

• US 5,391,896 A
• Filed: 09/02/1992
• Issued: 02/21/1995
• Est. Priority Date: 09/02/1992
• Status: Expired due to Fees

• Current Assignee: Midwest Research Institute
• Original Assignee: Midwest Research Institute
• Inventors: Wanlass, Mark W.
• Primary Examiner(s): Crane, Sara W.
• Application Number:
  US07/939,003
• Time in Patent Office: 902 Days
• Field of Search: 257/80, 257/81, 257/84, 257/85, 257/89, 257/90, 257/184, 257/440, 372/50
• US Class Current: 257/80
• CPC Class Codes: H01L 31/0687 Multiple junction or tandem solar cells
• CPC Class Codes: H01L 33/0016 having at least two p-n junctions
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials

Abstract

A single-crystal, monolithic, tandem, multi-color optical transceiver device is described, including (a) an InP substrate having upper and lower surfaces, (b) a first junction on the upper surface of the InP substrate, (c) a second junction on the first junction. The first junction is preferably GaInAsP of defined composition, and the second junction is preferably InP. The two junctions are lattice matched. The second junction has a larger energy band gap than the first junction. Additional junctions having successively larger energy band gaps may be included. The device is capable of simultaneous and distinct multi-color emission and detection over a single optical fiber.

Claims

1. A monolithic multi-color optical transceiver device comprising:

(a) a single-crystal substrate having upper and lower surfaces;

(b) a first junction comprising;

(1) a first base layer on said upper surface of said substrate;

said first base layer comprising GaInAsP lattice-matched to InP;

(2) a first emitter layer over said first base layer;

wherein said first emitter layer comprises GaInAsP lattice-matched to InP;

(c) a passivating layer over said first junction;

wherein said passivating layer has a band gap energy greater than that of said first emitter layer;

(d) a stop-etch layer over said passivating layer, wherein said stop-etch layer comprises GaInAs;

(e) a second junction comprising;

(1) a second base layer on said passivating layer;

wherein said second base layer comprises GaInAsP lattice-matched to InP;

wherein the band gap energy of said second base layer is greater than that of said first base layer;

wherein said second base layer is of a conductivity type which is the same as that of said first emitter layer;

(2) a second emitter layer over said second base layer;

wherein said second emitter layer comprises GaInAsP lattice-matched to InP;

(f) low resistance ohmic electrical contacts in electrical communication with each of said first and second base layers;

(g) at least one additional junction over said second junction;

wherein each said additional junction includes a base layer and an emitter layer;

wherein said base layer of each said additional junction has a band gap energy greater than the next lower base layer; and

wherein the base layer of each said additional junction is of a conductivity type which is the same as that of the adjacent emitter layer.

2. An optical transceiver in accordance with claim 1, further comprising a low resistance ohmic electrical contact in electrical communication with said lower surface of said substrate.