Redundancy elements using thin film transistors (TFTs)

• US 5,392,245 A
• Filed: 08/13/1993
• Issued: 02/21/1995
• Est. Priority Date: 08/13/1993
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Manning, Monte
• Primary Examiner(s): Popek, Joseph A.
• Assistant Examiner(s): MAI, SON LUU
• Application Number:
  US08/106,497
• Time in Patent Office: 557 Days
• Field of Search: 365/200, 365/96, 365/225.7, 365/201, 365/184, 365/189.02, 365/230.02, 371/10.1, 371/10.2, 371/10.3, 307/202.1, 307/441
• US Class Current: 365/200
• CPC Class Codes: G11C 16/0466 comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] G11C16/0483, G11C16/0491 take precedence
• CPC Class Codes: G11C 29/789 using non-volatile cells or latches

Abstract

An embodiment of the present invention describes a redundancy repair circuit fabricated in a Static Random Access Memory (SRAM) semiconductor device, with the redundancy repair circuit comprising: a plurality of thin film transistors (TFTs); a programming pad connecting to serially connected control gates of the plurality of TFTs; the plurality of TFTs having their individual source/drain terminals connecting between substitution logic and an address multiplexer. The redundancy repair circuit is operated by a method for shifting the threshold voltages of the TFTs using a programming pad connected serially to the control gates of a plurality of TFTs; the plurality of TFTs having their individual output terminals connecting between substitution logic and an address multiplexer; selecting an individual TFT by the address multiplexer; shorting at least one of the output terminals of the selected TFT to approximately a 5 V potential; shorting the output terminals of the remaining (non-selected) TFTs to approximately a 0 V potential; and applying a programming signal to the programming pad, the programming signal is sufficient to cause the threshold voltage of the selected TFT to shift approximately 1 V by injecting electrons into the TFT'"'"'s gate dielectric region while not effecting the threshold voltage of each individual said non-selected TFTs.

Claims

1. A method for shifting the threshold voltages of thin film transistors (TFTs) in a redundancy repair circuit fabricated on a supporting substrate, said method comprising:

using a programming pad connected serially to the control gates of a plurality of TFTs;

selecting individual TFTs;

shorting one of the output terminals of each selected TFT to a first potential;

shorting one of the output terminals of each remaining (non-selected) TFTs to a second potential, therefore producing an approximate 5 V offset between said first and second potentials; and

applying a programming signal to said programming pad, said programming signal is sufficient to cause the threshold voltage of each selected TFTs to shift by injecting charge into the TFT'"'"'s gate insulation region while not affecting the threshold voltage of each individual said non-selected TFT.

2. The method of claim 1, wherein said programming signal comprises a voltage source.

3. The method of claim 1, wherein said programming signal comprises a current source.

4. The method of claim 1, wherein said output terminals comprise source and drain terminals.

5. A method for shifting the threshold voltages of thin film transistors (TFTs) in a redundancy repair circuit fabricated in a semiconductor device, said method comprising:

using a programming pad connected serially to the control gates of a plurality of TFTs;

selecting individual TFTs;

shorting at least one of the output terminals of each selected TFT to a first potential that is approximately at 5 V;

shorting the output terminals of the remaining (nonselected) TFTs to a second potential that is approximately 0 V and thereby producing an approximate 5 V offset between said first and second potentials; and

applying a programming signal to said programming pad, said programming signal is sufficient to cause the threshold voltage of each selected TFT to shift approximately 1 V by injecting electrons into the TFT'"'"'s gate dielectric region while not effecting the individual threshold voltage of each said non-selected TFTs.

6. The method of claim 5, wherein said first potential comprises the semiconductor device'"'"'s operating potential.

7. The method of claim 5, wherein said second potential comprises the semiconductor device'"'"'s ground potential.

8. The method of claim 5, wherein said programming signal comprises a voltage source.

9. The method of claim 5, wherein said programming signal comprises a current source.

10. The method of claim 5, wherein said method is performed after said semiconductor device is packaged.

11. The method of claim 5, wherein said TFT'"'"'s gate dielectric is a dielectric selected from the group comprising oxide, nitride, oxide/nitride, oxide/nitride/oxide and any combination thereof.

12. The method of claim 5, wherein said output terminals comprise source and drain terminals.

13. A method for shifting the threshold voltages of thin film transistors (TFTs) fabricated in a redundancy repair circuit of a Static Random Access Memory (SRAM) semiconductor device, said method comprising:

using a programming pad connected serially to the control gates of a plurality of TFTs;

selecting an individual TFT;

shorting at least one of the output terminals of said selected TFT to approximately a 5 V potential;

shorting the output terminals of the remaining (nonselected) TFTs to approximately a 0 V potential; and

applying a programming signal to said programming pad, said programming signal is sufficient to cause the threshold voltage of said selected TFT to shift approximately 1 V by injecting electrons into the TFT'"'"'s gate dielectric region while not effecting the threshold voltage of each individual said non-selected TFTs.

14. The method of claim 13, wherein said first potential comprises the semiconductor device'"'"'s operating potential.

15. The method of claim 13, wherein said programming signal has a potential of approximately -30 V and is applied for a period of approximately 6 seconds.

16. The method of claim 13, wherein said programming signal comprises a current source of approximately -300 pA for approximately 6 seconds.

17. The method of claim 13, wherein said method is performed after said semiconductor device is packaged.

18. The method of claim 13, wherein said TFT'"'"'s gate dielectric is a dielectric selected from the group comprising oxide, nitride, oxide/nitride, oxide/nitride/oxide and any combination thereof.

19. The method of claim 13, wherein said output terminals comprise source and drain terminals.

20. A redundancy repair circuit fabricated on a supporting substrate, said redundancy repair circuit comprising:

a plurality of thin film transistors (TFTs); and

a programming pad connecting to serially connected control gates of said plurality of TFTs.

21. The redundancy repair circuit of claim 20, wherein said supporting substrate comprises a silicon wafer.

22. The redundancy repair circuit claim 20, wherein the TFT'"'"'s gate dielectric is a dielectric selected from the group comprising oxide, nitride, oxide/nitride, oxide/nitride/oxide and any combination thereof.

23. A redundancy repair circuit fabricated in a semiconductor device, said redundancy repair circuit comprising:

a plurality of thin film transistors (TFTs); and

a programming pad connecting to serially connected control gates of said plurality of TFTs.

24. The redundancy repair circuit of claim 23, wherein said supporting substrate comprises a silicon wafer.

25. The redundancy repair circuit of claim 23, wherein said TFTs are p-channel TFTs.

26. The redundancy repair circuit of claim 23, wherein said TFTs are n-channel TFTs.

27. The redundancy repair circuit claim 23, wherein the TFT'"'"'s gate dielectric is a dielectric selected from the group comprising oxide, nitride, oxide/nitride, oxide/nitride/oxide and any combination thereof.

28. A redundancy repair circuit fabricated in a Static Random Access Memory (SRAM) semiconductor device, said redundancy repair circuit comprising:

a plurality of thin film transistors (TFTs); and

a programming pad connecting to serially connected control gates of said plurality of TFTs.

29. The redundancy repair circuit of claim 28, wherein said supporting substrate comprises a silicon wafer.

30. The redundancy repair circuit of claim 28, wherein said TFTs are p-channel TFTs.

31. The redundancy repair circuit of claim 28, wherein said TFTs are n-channel TFTs.

32. The redundancy repair circuit claim 28, wherein the TFT'"'"'s gate dielectric is a dielectric selected from the group comprising oxide, nitride, oxide/nitride, oxide/nitride/oxide and any combination thereof.