Continuous phase and amplitude holographic elements

• US 5,393,634 A
• Filed: 05/27/1993
• Issued: 02/28/1995
• Est. Priority Date: 05/27/1993
• Status: Expired due to Term

• Current Assignee: The United States of America As Represented By The Secretary of Agriculture
• Original Assignee: United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration
• Inventors: Muller, Richard E., Maker, Paul D.
• Primary Examiner(s): Bowers, Jr., Charles L.
• Assistant Examiner(s): Angebranndt, Martin J.
• Application Number:
  US08/071,131
• Time in Patent Office: 642 Days
• Field of Search: 359/565, 359/569, 250/492.22, 250/492.3, 430/1, 430/2, 430/320, 430/296, 430/323, 430/942
• US Class Current: 430/1
• CPC Class Codes: G03F 7/001 Phase modulating patterns, e.g. refractive index patterns
• CPC Class Codes: G03H 1/08 Synthesising holograms, i.e. holograms synthesized from objects or objects from hologramsusing electric digital computers G06F; G06T
• CPC Class Codes: G03H 1/0891 Processes or apparatus adapted to convert digital holographic data into a hologram G03H1/2294 takes precedence
• CPC Class Codes: G03H 2001/0292 by masking
• CPC Class Codes: G03H 2001/0478 Serial printer, i.e. point oriented processing
• CPC Class Codes: G03H 2001/2615 in physical contact, i.e. layered holograms
• CPC Class Codes: G03H 2224/04 Particle beam, e.g. e-beam
• CPC Class Codes: G03H 2240/42 Discrete level
• CPC Class Codes: G03H 2240/43 Continuous
• CPC Class Codes: G03H 2260/63 Indirect etching, e.g. lithography
• CPC Class Codes: H01J 2237/3175 Lithography
• CPC Class Codes: Y10S 430/143 Electron beam

Abstract

A method for producing a phase hologram using e-beam lithography provides n-ary levels of phase and amplitude by first producing an amplitude hologram on a transparent substrate by e-beam exposure of a resist over a film of metal by exposing n≦m×m spots of an array of spots for each pixel, where the spots are randomly selected in proportion to the amplitude assigned to each pixel, and then after developing and etching the metal film producing a phase hologram by e-beam lithography using a low contrast resist, such as PMMA, and n-ary levels of low doses less than approximately 200 μC/cm² and preferably in the range of 20-200 μC/cm², and aggressive development using pure acetone for an empirically determined time (about 6 sec.) controlled to within 1/10 sec. to produce partial development of each pixel in proportion to the n-ary level of dose assigned to it.

Claims

1. A method for creation of a phase hologram element with n-ary levels of phase delay assigned to pixel areas thereof, where the number of levels is greater than sixteen, using e-beam lithography for creating complex surface relief patterns in a layer of low contrast e-beam resist material on a transparent substrate, comprising the steps of

exposing said pixel areas by a range of low doses of e-beam at n-ary levels in polymer resist material with individual dose correction for proximity effect, and

partially developing said resist material by controlled time of development less than necessary for full development, resulting in partial removal of e-beam exposed resist material in pixel areas in proportion to said n-ary levels of e-beam doses,

wherein exposures to said e-beam of adjacent pixels are each individually assigned a primary dose corrected for proximity effect, said proximity effect being defined as exposure dose contributed by backscattered electrons from said transparent substrate, said proximity effect being of the Gaussian form ##EQU5## where D_p, which depends strongly on substrate composition and geometry and upon the electron beam voltage, is the proximity dose intensity at distance r from a primary point dose Q_o delivered at r=0, η

is the proximity factor, and α

is the range of the Gaussian, and

said primary dose assigned to each of said adjacent pixels is corrected by having the total dose arriving at said distance r due to a spatially varying patterned primary dose D_prim, expressed as a convolution of an effective point spread function, PSF, with that patterned primary dose, as;

##EQU6## where ##EQU7##

2. A method for creation of an amplitude hologram in registration with a phase hologram element having n-ary levels of phase delay assigned to pixel areas thereof, where the number of levels is greater than sixteen,

said method for creation of an amplitude hologram comprising the steps of

first depositing a thin film of metal on said transparent substrate,

depositing a film of resist material over said thin film of metal on said transparent substrate,

exposing with a fixed maximum dose a separately selected percentage of each pixel area of said amplitude hologram, thereby producing a binary exposed film of resist material,

fully developing said binary exposed film of resist material, thereby producing an encoded resist mask,

fully etching said thin film of metal through said encoded resist mask,

stripping said encoded resist mask, thereby leaving an encoded pattern of fully etched thin film of metal, and

depositing a layer of low contrast e-beam resist material over said encoded pattern fully etched thin film of metal, and

then proceeding with creation of said phase hologram over said amplitude hologram using e-beam lithography for creating complex surface relief patterns in a layer of low contrast e-beam resist material on said transparent substrate,

exposing said pixel areas of said phase delay hologram by a range of low doses of e-beam at n-ary levels in said e-beam resist material, and

partially developing said e-beam resist material by controlled time of development less than necessary for full development, resulting in partial removal of e-beam exposed resist material in pixel areas in proportion to said n-ary levels of e-beam doses.

3. A method as defined in claim 2 wherein said separately selected percentage of each pixel area of said amplitude hologram is made up of a number k of randomly selected spots in an array of m×

m=n spots, wherein said number k is equal to said separately selected percentage of said m×

m=n spots.