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Silicon carbide switching device with rectifying-gate

  • US 5,396,085 A
  • Filed: 12/28/1993
  • Issued: 03/07/1995
  • Est. Priority Date: 12/28/1993
  • Status: Expired due to Term
First Claim
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1. A three terminal gate controlled semiconductor switching device, comprising:

  • a semiconductor substrate having first and second opposing faces;

    an insulated-gate field effect transistor having an insulated gate electrode, a first source region at the first face and a first drain region in the semiconductor substrate;

    a rectifying-gate field effect transistor having a gate electrode, a second source region in the semiconductor substrate and a second drain region at the second face, wherein said gate electrode and said second source region are electrically connected to said first source region and said first drain region, respectively;

    a drain contact electrically connected to said second drain region at the second face; and

    a source contact electrically connected to said first source region at the first face.

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