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Plasma CVD of silicon nitride thin films on large area glass substrates at high deposition rates

  • US 5,399,387 A
  • Filed: 04/13/1994
  • Issued: 03/21/1995
  • Est. Priority Date: 01/28/1993
  • Status: Expired due to Term
First Claim
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1. A plasma assisted chemical vapor deposition process comprisingdepositing a dielectric silicon nitride film from a plasma of a precursor gas comprising silane and ammonia onto a single substrate at a temperature of below about 450°

  • C. and a pressure of at least about 0.8 Torr in a vacuum chamber wherein the spacing between the gas inlet manifold and the substrate is adjusted so that the silicon nitride deposition rate is maximized.

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