Method of manufacturing of electrolumineschent devices

• US 5,399,502 A
• Filed: 05/05/1993
• Issued: 03/21/1995
• Est. Priority Date: 04/20/1989
• Status: Expired due to Term

• Current Assignee: IPIFS Guarantee Corp.
• Original Assignee: Cambridge Display Technology Limited (Sumitomo Chemical Company Limited)
• Inventors: Burroughes, Jeremy H., Friend, Richard H., Bradley, Donal D.
• Primary Examiner(s): QUACH, TUAN N
• Application Number:
  US08/050,348
• Time in Patent Office: 685 Days
• Field of Search: 437/1, 437/180, 437/225, 437/247, 437/194
• US Class Current: 438/22
• CPC Class Codes: C09K 11/06 containing organic luminescent materials
• CPC Class Codes: H05B 33/14 characterised by the chemical or physical composition or the arrangement of the electroluminescent material , or by the simultaneous addition of the electroluminescent material in or onto the light source
• CPC Class Codes: H10K 50/11 characterised by the electroluminescent [EL] layers
• CPC Class Codes: H10K 85/113 Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
• CPC Class Codes: H10K 85/114 Poly-phenylenevinylene; Derivatives thereof

Abstract

An electroluminescent device includes a semiconductor layer (4) in the form of a thin dense polymer film comprising at least one conjugated polymer, a first contact layer (5) in contact with a first surface of the semiconductor layer, and a second contact layer (3) in contact with a second surface of the semiconductor layer. The polymer film (4) of the semiconductor layer has a sufficiently low concentration of extrinsic charge carriers that on applying an electric field between the first and second contact layers across the semiconductor layer so as to render the second contact layer positive relative to the first contact layer charge carriers are injected into the semiconductor layer and radiation is emitted from the semiconductor layer. The polymer film can be poly (p-phenyenevinylene) [PPV] of formula (I) wherein the phenylene ring may optionally carry one or more substituents each independently selected from alkyl (preferably methyl), alkoxy (preferably methoxy or ethoxy), halogen (preferably chlorine or bromine) or nitro. A method of manufacture of an electroluminescent device includes steps of depositing a thin layer of a precursor polymer onto a substrate and then heating the precursor polymer to a high temperature to form the conjugated polymer.

Claims

1. A method of manufacture of an electroluminescent device wherein a semiconductor layer in the form of a thin layer of a dense polymer film comprising at least one conjugated polymer is deposited onto a substrate by the steps of depositing a thin layer of a precursor polymer as a thin polymer film onto the substrate and then heating the deposited precursor polymer to a high temperature sufficient to convert the precursor polymer to the conjugated polymer, a thin layer of a first contact layer being placed in contact with a first surface of the semiconductor layer and a thin layer of a second contact layer being placed in contact with a second surface of the semiconductor layer, wherein the polymer film has a sufficiently low concentration of extrinsic charge carriers that on applying an electric field between the first and second contact layers once in contact with the semiconductor layer so as to render the second contact layer positive relative to the first contact layer charge carriers are injected into the semiconductor layer and radiation emitted from the semiconductor layer.

2. A method as claimed in claim 1, comprising the steps of firstly depositing the first charge injecting contact layer onto a supporting substrate to form a composite substrate then depositing the precursor polymer as a thin dense polymer film onto the first charge injecting contact layer and then heating the composite substrate and the precursor polymer to a high temperature to form the conjugated polymer in the polymer film and finally depositing the second charge injecting contact layer onto the polymer film.

3. A method as claimed in claim 1, wherein the precursor polymer is soluble and is deposited as a thin polymer film on the substrate by spin-coating.

4. A method as claimed in claim 1, wherein the precursor polymer is a precursor polymer for poly (p-phenylenevinylene) [PPV].

5. A method as claimed in claim 4, wherein the thin dense polymer film is of uniform thickness in the range 100 nm to 5 μ

m.

6. A method as claimed in claim 4, wherein the first charge injecting contact layer is a thin layer of aluminum on one surface of which there is a thin oxide layer, the thin oxide layer of the first charge injecting contact layer being placed in contact with the first surface of the semiconductor layer.

7. A method as claimed in claim 4, wherein the second charge injecting contact layer is selected from the group consisting of aluminum and gold.

8. A method as claimed in claim 4, wherein the first contact layer is selected from the group consisting of aluminum and magnesium/silver alloy and the second contact layer is indium oxide.

9. A method as claimed in claim 4, wherein the first contact layer comprises amorphous silicon and the second contact layer is selected from the group consisting of aluminum, gold and indium oxide.

10. A method as claimed in claim 4, wherein the first and second charge injecting contact layers are deposited by evaporation.

11. A method as claimed in claim 4, wherein the supporting substrate is silica glass.

12. A method as claimed in claim 4, wherein the substrate is flexible.

13. A method as claimed in claim 4, wherein the substrate is constructed of a flexible polymer film.

14. A method as claimed in claim 1, wherein the thin dense polymer film is of uniform thickness in the range 10 nm to 5 μ

m.

15. A method as claimed in claim 1, wherein the first charge injecting contact layer is a thin layer of aluminum on one surface of which there is a thin oxide layer, the thin oxide layer of the first charge injecting contact layer being placed in contact with the first surface of the semiconductor layer.

16. A method as claimed in claim 1, wherein the second charge injecting contact layer is selected from the group consisting of aluminum and gold.

17. A method as claimed in claim 1, wherein the first contact layer is selected from the group consisting of aluminum and magnesium/silver alloy and the second contact layer is indium oxide.

18. A method as claimed in claim 1, wherein the first contact layer comprises amorphous silicon and the second contact layer is selected from the group consisting of aluminum, gold and indium oxide.

19. A method as claimed in claim 1, wherein

the first and second charge injecting contact layers are deposited by evaporation.

20. A method as claimed in claim 1, wherein the supporting substrate is silica glass.

21. A method as claimed in claim 1, wherein the substrate is flexible.

22. A method as claimed in claim 1, wherein the substrate is constructed of a flexible polymer film.