Low-temperature in-situ dry cleaning process for semiconductor wafer

• US 5,403,434 A
• Filed: 01/06/1994
• Issued: 04/04/1995
• Est. Priority Date: 01/06/1994
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Moslehi, Mehrdad M.
• Primary Examiner(s): POWELL, WILLIAM A
• Application Number:
  US08/178,173
• Time in Patent Office: 453 Days
• Field of Search: 156/643, 156/646, 156/656, 156/657, 156/662, 156/345, 134/2, 134/30, 134/31, 134/1, 437/225, 204/192.32, 204/192.37, 204/298.31, 204/298.33
• US Class Current: 134/1.2
• CPC Class Codes: H01L 21/02046 Dry cleaning only H01L21/02085 takes precedence
• CPC Class Codes: H01L 21/02049 with gaseous HF
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes
• CPC Class Codes: Y10S 438/906 Cleaning of wafer as interim step

Abstract

A low-temperature (350° C. to 750° C.) in-situ dry cleaning process for removing native oxide (and other contaminants) from a semiconductor wafer surface, that can be used with either batch or single-wafer semiconductor device manufacturing reactors. A wafer is contacted with a dry cleaning mixture of digermane Ge₂ H₆ and hydrogen gas (51). The digermane-to-hydrogen flow ratio is small enough (usually between 1 ppm to 100 ppm) to ensure effective wafer surface cleaning without any germination deposition. Moreover, the dry cleaning mixture can include a halogen-containing gas (such as HCl or HBr) (52, 54) to enhance removal of metallic contaminants, and/or anhydrous HF gas (53, 54) to further enhance the native oxide removal process. The dry cleaning process can be further activated by introducing some or all of the hydrogen and/or an inert additive gas as a remote plasma. The digermane-based cleaning process of this invention can also be further activated by photo enhancement effects. This dry cleaning process is adaptable as a precleaning step for multiprocessing applications that, during transitions between process steps, reduce thermal cycling (FIGS. 3a-c) by reducing wafer temperature only to an idle temperature (350° C.), and by reducing vacuum cycling via maintaining constant flow rates for carrier gases (FIG. 3a), thereby substantially reducing thermal stress and adsorption of residual impurities, while limiting dopant redistribution.

Claims

1. A low-temperature in-situ dry cleaning process for removing contaminants from the surface of a semiconductor wafer under fabrication, comprising the steps of:

setting the wafer temperature in a range not substantially exceeding 750°

C.; and

contacting the wafer with a dry cleaning ambient consisting of digermane (Ge₂ H₆).

2. The low-temperature in-situ dry cleaning process of claim 1 wherein said contacting step further comprises contacting the wafer with a dry cleaning ambient consisting of digermane and hydrogen.

3. The low-temperature in-situ dry cleaning process of claim 1 wherein said contacting step further comprises contacting the wafer with a dry cleaning ambient consisting of digermane and hydrogen so that the digermane-to-hydrogen gas flow ratio is between 1 part per million and 1000 parts per million.

4. The low-temperature in-situ dry cleaning process of claim 1 wherein the wafer temperature is in the range of 350°

C. to 750°

C.

5. The low-temperature in-situ dry cleaning process of claim 1 wherein said contacting step further comprises contacting the wafer with a dry cleaning ambient consisting of digermane and hydrogen so that the digermane-to-hydrogen gas flow ratio is approximately 10 parts per million.

6. The low-temperature in-situ dry cleaning process of claim 1 wherein said contacting step further comprises contacting the wafer with a dry cleaning ambient consisting of digermane and hydrogen and wherein the process is enhanced by introducing at least a portion of the hydrogen as a remote plasma stream.

7. The low-temperature in-situ dry cleaning process of claim 1 wherein the process is enhanced by a photochemical energy source.

8. The low-temperature in-situ dry cleaning process of claim 1 wherein the dry cleaning ambient further includes a halogen-containing gas at a flow rate of less than about 50 sccm.

9. The low-temperature in-situ dry cleaning process of claim 1 wherein the dry cleaning ambient further includes HF gas at a flow rate of less than about 10 sccm.

10. The low-temperature in-situ dry cleaning process of claim 1 wherein the process is enhanced by introducing an inert gas as a remote plasma.

11. The low-temperature in-situ dry cleaning process of claim 1 wherein the process is enhanced by introducing an inert gas as a remote plasma, the dry cleaning ambient further includes a halogen-containing gas and the ambient is introduced into the afterglow of the plasma discharge.

12. The low-temperature in-situ dry cleaning process of claim 1 wherein the dry cleaning process is used as a pre-cleaning step in a multiprocessing sequence.

13. The low-temperature in-situ dry cleaning process of claim 1 wherein the dry cleaning process is used in connection with a multi-wafer batch fabrication equipment.

14. A method of semiconductor multi-processing for fabricating a semiconductor wafer in a sequence of more than one process steps, comprising the steps of:

during each transition between process steps, maintaining wafer temperature at a level high enough to substantially reduce temperature swings on the wafer and to reduce the absorption of residual process environment impurities;

during each transition between process steps in which at least one of the process gasses is a common process gas used in each of the steps, maintaining the gas flow for such common process gas at substantially the same flow rate;

during each such transition, maintaining the process chamber pressure substantially the same; and

wherein one of the process steps in the sequence is a pre-cleaning process comprising the steps of;

setting the ambient temperature for the wafer in a range not substantially exceeding 750°

C.; and

contacting the water with a dry cleaning process ambient consisting of hydrogen (H₂) gas and digermane (Ge₂ H₆) gas, such that the digermane-to-hydrogen gas flow ratio is between 1 part per million and 1000 parts per million.

15. The multi-processing methodology of claim 14 wherein the wafer temperature is in the range of 350°

C. to 750°

C.

16. The multi-processing methodology of claim 14 wherein the digermane-to-hydrogen flow ratio is about 10 parts per million.

17. An apparatus for performing a low-temperature in-situ dry cleaning process for removing contaminants from the surface of a semiconductor wafer, comprising:

a heater for setting the ambient temperature for the wafer in a range not substantially exceeding 750°

C.; and

a gas distribution network for contacting the wafer with a dry cleaning ambient consisting of hydrogen (H₂) gas and digermane (Ge₂ H₆) gas such that the digermane-to-hydrogen gas flow ratio is between 1 part per million and 1000 parts per million.

18. The apparatus of claim 17 wherein said heater is further operable to set the wafer temperature in the range of 350°

C. to 750°

C.

19. The apparatus of claim 17 further comprising a plasma generator for introducing at least a portion of the hydrogen gas as a remote plasma.

20. The apparatus of claim 17 further comprising a photochemical process activation energy source.